Untitled
Abstract: No abstract text available
Text: SBD T y p e : FCH08A03L OUTLINE DRAWING FEATURES FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings
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FCH08A03L
O-220AB
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : FCH08A03L •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.75g ■最大定格 / Maximum Ratings
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FCH08A03L
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : FCH08A03L •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.75g ■最大定格 / Maximum Ratings
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FCH08A03L
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : FCH08A03L •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.75g ■最大定格 / Maximum Ratings
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FCH08A03L
duty1/50)
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FCH08A03L
Abstract: No abstract text available
Text: 8A Avg. 30 Volts SBD FCH08A03L •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage くり返しピークサージ逆電圧 Repetitve Peak Surge Reverse Voltage
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FCH08A03L
duty1/50
Tc133
FCH08A03L
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Untitled
Abstract: No abstract text available
Text: 8A Avg. 30 Volts SBD FCH08A03L •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage くり返しピークサージ逆電圧 Repetitve Peak Surge Reverse Voltage
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FCH08A03L
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FCH08A03L
Abstract: No abstract text available
Text: SBD T y p e : FCH08A03L OUTLINE DRAWING FEATURES FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings
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FCH08A03L
O-220AB
FCH08A03L
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FCH08A03L
Abstract: No abstract text available
Text: SBD T y p e : FCH08A03L OUTLINE DRAWING FEATURES FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings
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FCH08A03L
O-220AB
FCH08A03L
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : FCH08A03L OUTLINE DRAWING FEATURES FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings
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FCH08A03L
O-220AB
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FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
FCH20U10
niec FCHS10A12
FCU20A40
FCU10UC30
FCQ10U06
FSF05B60
SA10QA03
fchs20a08
10ERB20
FCQS30A045
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PT76S16
Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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FRH20A10
Abstract: FCH20A20 FRH20A20 Schottky Diodes 5A TC108 TC116 TC105 FCH10 fcq06a06 FCL30A015 tc122 25
Text: Schottky Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM（mA) 25°C Tjmax (°C) Case Outline TO-220AB Full Pack FSH04A03LB 30 4 Tc=132℃ 100 0.56 1 150 14B FSH04A04B FSH04A06B FSH04A10B 40 60 100 4 4 4 Tc=131℃ Tc=129℃ Tc=126℃
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O-220AB
FSH04A03LB
FSH04A04B
FSH04A06B
FSH04A10B
FSQ05A03LB
FSQ05A04B
FSH05A04B
FSQ05A06B
FSH05A06B
FRH20A10
FCH20A20 FRH20A20
Schottky Diodes 5A
TC108
TC116
TC105
FCH10
fcq06a06
FCL30A015
tc122 25
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508RP
Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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FCGS20A12
Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE sa / sov FCH08A03L FEATURES o Sim ilar to TO-220AB Case o Fully Molded Isolation oD ual Diodes-Cathode Common OLow Forward Voltage Drop o Low Power Loss, High Efficiency o High Surge Capability o T j = 150°C operation MAXIMUM RATINGS
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O-220AB
FCH08A03L
FCH08A03L
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE FCH08A03L sa/ sov 3.1 122 MAX FEATURES k .UU.Ul,. y iiE rm DIA 10.31.405) 4.8U89> 'MAX o S im ila r to TO-220AB Case o F u lly M olded Isolation 2.H5(.112I 2.551.11») o D u a l D iodes-C athode C om m on O L ow F o rw a rd V o ltag e D rop
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FCH08A03L
O-220AB
FCH08A-
GG2G11
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FCH08A03L
Abstract: mx 306 0002011
Text: SCHOTTKY BARRIER DIODE FCH08A03L s a /s o v FEA TU RES o S im ila r to T 0-220A B Case o F u lly M olded Isolation o D u a l D iodes-C athode Com m on o L o w F o rw a rd V o ltag e D rop max" o L o w P o w er Loss, H igh Efficiency *•»•>«»*•« o H igh S urge C apability
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fch08a03l
O-220AB
FCH08A.
bblS123
Q0D201B
FCH08A03L
mx 306
0002011
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30KF60B
Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
Text: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166
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1N4001
1N4002
1N4004
1N4005
1N4006
1N4007
2VF10CT
F20CT
F30CT
F40CT
30KF60B
10EF1
NSF03A20
C25P10Q
F10P10Q
C25P40F
KSF25A120B
C10P10Q
61MQ60
c16p40f
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F10P100
Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Text: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04
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11EQS03L
11EQS02L
11EQ03
11EQ04
11EQ05
11EQ06
11EQ09
11EQ10
11EQS03
11EQS04
F10P100
10EF1
12MF30
diode f40c
60KQ10B
30MF40
F10KF20B
12MF40
C16P04Q
C25P40F
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