fen30jp
Abstract: FEN30FP 30JP
Text: 30A Super Fast Recovery Rectifier FEN30FP – FEN30JP 30A Super Fast Recovery Rectifier Features • • • • • • • Glass passivated chip junction Low reverse leakage current High forward surge capability Low power loss, high efficiency Low stored charge majority carrier conduction
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FEN30FP
FEN30JP
MIL-STD-750,
fen30jp
FEN30FP
30JP
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Untitled
Abstract: No abstract text available
Text: 30A Super Fast Recovery Rectifier FEN30AP – FEN30DP 30A Super Fast Recovery Rectifier Features • • • • • • • Glass passivated chip junction Low reverse leakage current High forward surge capability Low power loss, high efficiency Low stored charge majority carrier conduction
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FEN30AP
FEN30DP
MIL-STD-750,
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PDF
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Untitled
Abstract: No abstract text available
Text: 30A Super Fast Recovery Rectifier FEN30FP – FEN30JP 30A Super Fast Recovery Rectifier Features • • • • • • • Glass passivated chip junction Low reverse leakage current High forward surge capability Low power loss, high efficiency Low stored charge majority carrier conduction
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FEN30FP
FEN30JP
MIL-STD-750,
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PDF
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fen30dp
Abstract: FEN30AP
Text: 30A Super Fast Recovery Rectifier FEN30AP – FEN30DP 30A Super Fast Recovery Rectifier Features • • • • • • • Glass passivated chip junction Low reverse leakage current High forward surge capability Low power loss, high efficiency Low stored charge majority carrier conduction
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FEN30AP
FEN30DP
MIL-STD-750,
fen30dp
FEN30AP
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diode RGP 30D
Abstract: RGP30A RGP30M
Text: 3.0A Sintered Glass Passivated Fast Recovery Rectifier RGP30A – RGP30M 3.0A Sintered Glass Passivated Fast Recovery Rectifier Features • • • • • • Sintered glass passivated SGP rectifier chip Capable of meeting environmental standards of MIL-S-19500
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RGP30A
RGP30M
MIL-S-19500
DO-201AD
DO-201AD
MIL-STD-750,
diode RGP 30D
RGP30A
RGP30M
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Untitled
Abstract: No abstract text available
Text: 3.0A Sintered Glass Passivated Fast Recovery Rectifier RGP30A – RGP30M 3.0A Sintered Glass Passivated Fast Recovery Rectifier Features • • • • • • GPRC glass passivated rectifier chip inside Capable of meeting environmental standards of MIL-S-19500
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RGP30A
RGP30M
MIL-S-19500
DO-201AD
DO-201AD
MIL-STD-750,
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PDF
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Untitled
Abstract: No abstract text available
Text: RURG3060CC_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an dual ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.
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RURG3060CC
RURG3060
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Untitled
Abstract: No abstract text available
Text: RURG3060_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr< 80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.
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RURG3060
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Untitled
Abstract: No abstract text available
Text: ISL9R3060G2_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=102ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is a Stealth dual diode optimized for low loss performance in high frequency hard switched applications.The Stealth™ family exhibits low reverse recovery current
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ISL9R3060G2
102ns
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: RHRG3060_F085 30A, 600V Hyperfast Rectifier Features Max Ratings 600V, 30A • High Speed Switching ( trr=45ns(Typ.) @ IF=30A ) The RHRG3060_F085 is an Hyperfast diode with soft recovery characteristics (trr < 45ns). It has half the recovery time of ultrafast diode and is of silicon nitride
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RHRG3060
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Untitled
Abstract: No abstract text available
Text: RURG3060_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is
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RURG3060
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Untitled
Abstract: No abstract text available
Text: ISL9R3060G2_F085 30A, 600V Stealth Rectifier Features 30A, 600V Stealth Rectifier • High Speed Switching trr=31ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications.
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ISL9R3060G2
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Untitled
Abstract: No abstract text available
Text: FFPF30UP20S Ultrafast Recovery Power Rectifier Features • Ultrafast with Soft Recovery : < 50ns @IF = 30A • High Reverse Voltage : VRRM = 200V • Avalanche Energy Rated • Planar Construction Applications • Output Rectifiers • Switching Mode Power Supply
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FFPF30UP20S
O-220F
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F30UP20S
Abstract: FFPF30UP20S FFPF30UP20STU F30UP20
Text: FFPF30UP20S Ultrafast Recovery Power Rectifier Features • Ultrafast with Soft Recovery : < 50ns @IF = 30A • High Reverse Voltage : VRRM = 200V • Avalanche Energy Rated • Planar Construction Applications • Output Rectifiers • Switching Mode Power Supply
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FFPF30UP20S
O-220F
F30UP20S
FFPF30UP20S
FFPF30UP20STU
F30UP20
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HFA16PB120
Abstract: IRFP250 HFA30PB120PBF
Text: PD -95686A HFA30PB120PbF Ultrafast, Soft Recovery Diode HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI
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-95686A
HFA30PB120PbF
120nC
O-247AC
HFA16PB120
12-Mar-07
IRFP250
HFA30PB120PBF
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HFA15TB60S
Abstract: IRFP250
Text: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free
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PD-96033
HFA15TB60SPbF
HFA15TB60S
12-Mar-07
IRFP250
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HFA30TA60C
Abstract: HFA16TA60C IRFP250 vishay transistor date code dt2 marking code
Text: PD-95689 HFA30TA60CPbF HEXFRED TM Ultrafast, Soft Recovery Diode Features 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI
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PD-95689
HFA30TA60CPbF
HFA30TA60C
12-Mar-07
HFA16TA60C
IRFP250
vishay transistor date code
dt2 marking code
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PDF
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FFPF30UP20STTU
Abstract: No abstract text available
Text: FFPF30UP20STTU Ultrafast Recovery Power Rectifier Features • Ultrafast with Soft Recovery : < 50ns @IF = 30A • High Reverse Voltage : VRRM = 200V • Avalanche Energy Rated • Planar Construction Applications • Output Rectifiers • Switching Mode Power Supply
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FFPF30UP20STTU
O-220F
FFPF30UP20STTU
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PDF
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Untitled
Abstract: No abstract text available
Text: FFPF30UP20STTU Ultrafast Recovery Power Rectifier Features • Ultrafast with Soft Recovery : < 50ns @IF = 30A • High Reverse Voltage : VRRM = 200V • Avalanche Energy Rated • Planar Construction Applications • Output Rectifiers • Switching Mode Power Supply
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FFPF30UP20STTU
O-220F
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ST hexfet to 247
Abstract: anode common fast recovery diode 15A 200V HFA30PA60C
Text: Bulletin PD -2.336 rev. C 05/01 HFA30PA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 600V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 1.2V IF(AV) = 15A Qrr (typ.)= 80nC
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HFA30PA60C
HFA30PA60C
12-Mar-07
ST hexfet to 247
anode common fast recovery diode 15A 200V
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F30UA60S
Abstract: FFPF30UA60S
Text: FFPF30UA60S UItrafast Rectifier tm Features 30A, 600V Ultrafast Rectifier • Ultrafast switching, Trr < 90ns The FFPF30UA60S is ultrafast rectifier with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping rectifiers in a variety of switching
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FFPF30UA60S
FFPF30UA60S
F30UA60S
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HFA15PB60
Abstract: 94052 IRFP250
Text: PD - 95681A HFA15PB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 2 1 CATHODE Reduced RFI and EMI
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5681A
HFA15PB60PbF
HFA15PB60
12-Mar-07
94052
IRFP250
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PDF
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IRF035
Abstract: IRF034
Text: HE D I 4Ô55MS2 □ 0G*i02b *1 | Data Sheet No. PD-9.585A INTERNATIONAL R ECTIFIER INTERNATIONAL RECTIFIER IO R AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF034 IRFQ35 : N -C H A N N E L 60 Volt, 0.050 Ohm HEXFET TO-204AE TO-3 Hermetic Package
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OCR Scan
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55MS2
IRF034
IRFQ35
O-204AE
IRF034,
IRF035
5S452
IRF034
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A7321
Abstract: marking 2U diode diode 2U 88
Text: PD - 9.905A International IQR Rectifier IR L Z 3 4 S /L HEXFET Power MOSFET Advanced Process Technology Surface M ount IRLZ34S Low -profile through-hole (IRLZ34L) 1 75 °C O perating Tem perature Fast Switching Fully Avalanche Rated V dss = 60 V R d s (oh) = 0 .0 5 0 Î2
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OCR Scan
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IRLZ34S)
IRLZ34L)
A7321
marking 2U diode
diode 2U 88
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PDF
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