strobo
Abstract: No abstract text available
Text: TFR7H TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR7H Unit: mm STROBO FLASHER APPLICATIONS FAST RECOVERY Average Forward Current : IF (AV) = 0.2A Reverse Voltage (DC) : VRM = 500V Repetitive Peak Reverse Surge Voltage : VRRSM = 1500V Reverse Recovery Time
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Untitled
Abstract: No abstract text available
Text: TFR7H TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR7H Unit: mm STROBO FLASHER APPLICATIONS FAST RECOVERY l Average Forward Current : IF (AV) = 0.2A l Reverse Voltage (DC) : VRM = 500V l Repetitive Peak Reverse Surge Voltage : VRRSM = 1500V l Reverse Recovery Time
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marking code toshiba
Abstract: toshiba control code toshiba marking code diode strobo led
Text: TFR7H TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR7H STROBO FLASHER APPLICATIONS FAST RECOVERY Unit: mm Average Forward Current: IF (AV) = 0.2A Reverse Voltage (DC): VRM = 500V Repetitive Peak Reverse Surge Voltage: VRRSM = 1500V Reverse Recovery Time: trr = 10µs
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13oducts
marking code toshiba
toshiba control code
toshiba marking code diode
strobo led
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Untitled
Abstract: No abstract text available
Text: TFR7H TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR7H STROBO FLASHER APPLICATIONS FAST RECOVERY Unit: mm z Average Forward Current: IF (AV) = 0.2A z Reverse Voltage (DC): VRM = 500V z Repetitive Peak Reverse Surge Voltage: VRRSM = 1500V z Reverse Recovery Time: trr = 10 s
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Untitled
Abstract: No abstract text available
Text: TFR7H TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR7H STROBO FLASHER APPLICATIONS FAST RECOVERY Unit: mm z Average Forward Current: IF (AV) = 0.2A z Reverse Voltage (DC): VRM = 500V z Repetitive Peak Reverse Surge Voltage: VRRSM = 1500V z Reverse Recovery Time: trr = 10µs
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Untitled
Abstract: No abstract text available
Text: Bulletin I2094 rev. B 10/06 SD233N/R SERIES FAST RECOVERY DIODES Stud Version Features 235A High power FAST recovery diode series 4.5 µs recovery time High voltage ratings up to 4500V High current capability Optimized turn on and turn off characteristics
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I2094
SD233N/R
SD233N/R
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S50L
Abstract: SD263C
Text: Bulletin I2071 rev. A 10/94 SD263C.S50L SERIES Hockey Puk Version FAST RECOVERY DIODES Features 375A High power FAST recovery diode series 4.5 µs recovery time High voltage ratings up to 4500V High current capability Optimized turn on and turn off characteristics
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I2071
SD263C.
DO-200AB
000V/us,
00A/us
S50L
SD263C
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SD23
Abstract: No abstract text available
Text: Bulletin I2094 rev. A 09/94 SD233N/R SERIES FAST RECOVERY DIODES Stud Version Features 235A High power FAST recovery diode series 4.5 µs recovery time High voltage ratings up to 4500V High current capability Optimized turn on and turn off characteristics
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I2094
SD233N/R
SD233N/R
00A/us
SD23
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S502A
Abstract: S50L SD55 SD553C
Text: Bulletin I2092 rev. B 10/94 SD553C.S50L SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 6.0 µs recovery time 560A High voltage ratings up to 4500V High current capability Optimized turn on and turn off characteristics
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I2092
SD553C.
DO-200AB
00A/us
000V/us
S502A
S50L
SD55
SD553C
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fr3t
Abstract: fr3n NL 006 toshiba diode 1A marking code toshiba toshiba marking code diode fr3n
Text: TOSHIBA TFR3N,TFR3T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR3N, TFR3T a STROBO FLASHER APPLICATIONS FAST RECOVERY • • • Average Forward Current : Ip (AV) —0.2A Repetitive Peak Reverse Voltage : V rrm = 1000, 1500V Reverse Recovery Time
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OCR Scan
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961001EAA2'
fr3t
fr3n
NL 006
toshiba diode 1A
marking code toshiba
toshiba marking code diode fr3n
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fr1n
Abstract: No abstract text available
Text: TOSHIBA TFR1N,TFR1T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR1N, TFR1T Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • Average Forward Current : If (a V) = 0.5A • Repetitive Peak Reverse Voltage : V rrm = 1000, 1500V • Reverse Recovery Time
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OCR Scan
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961001EAA2'
fr1n
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TFR4N,TFR4T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR4N, TFR4T Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • Average Forward Current : Ip (AV) —0.3A • Repetitive Peak Reverse Voltage : V rrm = 1000, 1500V • Reverse Recovery Time
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OCR Scan
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26MIN.
961001EAA2'
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marking WMM
Abstract: 3-3F2A toshiba month code fast recovery diode 1500V
Text: TOSHIBA TFR7H TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR7H STROBO FLASHER APPLICATIONS FAST RECOVERY Average Forward Current : I f ( A V ) =0.2A Reverse Voltage (DC) : V = 500V Repetitive Peak Reverse Surge Voltage : V rrsm = 1500V Reverse Recovery Time : trr= 10/^s
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OCR Scan
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RECTAN-360Â
marking WMM
3-3F2A
toshiba month code
fast recovery diode 1500V
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fr2t diode
Abstract: fr2N fr2t
Text: TOSHIBA TFR2N,TFR2T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR2N, TFR2T Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time l F (A V ) = 0-5A Vrrm = 1000, 1500V
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OCR Scan
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961001EAA2'
fr2t diode
fr2N
fr2t
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fr2t diode
Abstract: VRRM1000 toshiba diode do-41
Text: TO SH IBA TFR2N,TFR2T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR2N, TFR2T Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time (AV) = 0-5A V r r m = 1000, 1500V
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OCR Scan
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DO-41
000707EAA2'
fr2t diode
VRRM1000
toshiba diode do-41
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FR3N
Abstract: No abstract text available
Text: TFR3NJFR3T T O SH IB A TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR3N TFR3T Unit in mm STROBO FLASHER APPLICATIONS FAST RECOVERY • • • «B- Average Forward Current : Ijf (AV) —0.2A Repetitive Peak Reverse Voltage : V rrjv[=1000, 1500V Reverse Recovery Time
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OCR Scan
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961001EAA2'
FR3N
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TFR4N,TFR4T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR4N, TFR4T STROBO FLASHER APPLICATIONS. FAST RECOVERY Unit in mm • Average Forward Current : Ijr (AV) = 0.3A • Repetitive Peak Reverse Voltage : Vr rm = 1000, 1500V • Reverse Recovery Time
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OCR Scan
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TFR3N,TFR3T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR3N, TFR3T Unit in mm STROBO FLASHER APPLICATIONS FAST RECOVERY • • • Average Forward Current : Ip (AV)= 0-2A Repetitive Peak Reverse Voltage : Vf>j>M = 1000, 1500V Reverse Recovery Time
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OCR Scan
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fr2t diode
Abstract: fr2n
Text: TFR2NJFR2T T O SH IB A TOSHIBA FAST RECOVERY DIODE TFR7N SILICON DIFFUSED TYPE T FR 7 T Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time : l F (AV) = °-5A : VrRM~1000, 1500V
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OCR Scan
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961001EAA2'
fr2t diode
fr2n
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Untitled
Abstract: No abstract text available
Text: T O S H IB A TFR1 N,TFR1T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR1N, TFR1T STROBO FLASHER APPLICATIONS. FAST RECOVERY • • • Unit in mm Average Forward Current : Ijr (AV) = 0.5A Repetitive Peak Reverse Voltage : Vr rm = 1000, 1500V Reverse Recovery Time
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toshiba marking code diode
Abstract: No abstract text available
Text: T O SH IB A TFR4N,TFR4T TOSHIBA FAST RECOVERY DIODE TFRAN SILICON DIFFUSED TYPE TFRdT Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • • • Average Forward Current : I f (AV)~0.3A Repetitive Peak Reverse Voltage : V r r ]v[= 1000, 1500V Reverse Recovery Time
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OCR Scan
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961001EAA2'
toshiba marking code diode
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TOSHIBA 1N DIODE
Abstract: TFR1
Text: T O SH IB A TFR1NJFR1T TOSHIBA FAST RECOVERY DIODE TFR 1N SILICON DIFFUSED TYPE TFR1T Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • Average Forward C urrent : I f (AV)~0.5A • • Repetitive Peak Reverse Voltage : V r r ]v[= 1000, 1500V Reverse Recovery Time
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OCR Scan
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961001EAA2'
TOSHIBA 1N DIODE
TFR1
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fr2t diode
Abstract: fr2N fr2t strobo toshiba diode "do-41"
Text: SILICON DIFFUSED TYPE FAST RECOVERY DIODE STROBO FLASHER APPLICATIONS. FAST RECOVERY • Average Forward Current • Repetitive Peak Reverse Voltage • Reverse Recovery Time U n it in m m IF(AV) = °-5A V r r m = 1000, 1500V tj-j* — 4 / ¿ s M A X IM U M RATING
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OCR Scan
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DO-41
fr2t diode
fr2N
fr2t
strobo
toshiba diode "do-41"
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Untitled
Abstract: No abstract text available
Text: SILICON DIFFUSED TYPE FAST RECOVERY DIODE TFR1N/T STRO BO FLASHER APPLICATIONS. FAST RECOVERY U n it in m m • Average Forward Current IF(AV) =0-5A • Repetitive Peak Reverse Voltage V r r m = 1000, 1500V • Reverse Recovery Time tj*j*—10//S M A X IM U M RATING
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OCR Scan
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--10//S
DO-41
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