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    FAIRCHILD DATASHEET RFP3055 Search Results

    FAIRCHILD DATASHEET RFP3055 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54ABT245/BRA Rochester Electronics LLC Replacement for Fairchild part number 5962-9214801QRA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    74F403SPC Rochester Electronics LLC Replacement for Fairchild part number 74F403SPC. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    54F38/QCA Rochester Electronics LLC Replacement for Fairchild part number 54F38/BCA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    93425ADM/B Rochester Electronics LLC Replacement for Fairchild part number 93425ADMQB. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    54ABT245/B2A Rochester Electronics LLC Replacement for Fairchild part number 5962-9214801Q2A. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy

    FAIRCHILD DATASHEET RFP3055 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FD3055

    Abstract: fp3055 TA49082 IS433 RFD3055
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF RFD3055, RFD3055SM, RFP3055 TA49082. TB334 RFD3055SM RFD3055SM9A136 RFD3055SM9A O-252 FD3055 fp3055 TA49082 IS433 RFD3055

    fd3055

    Abstract: No abstract text available
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF RFD3055, RFD3055SM, RFP3055 TA49082. fd3055

    FD3055

    Abstract: IS433 Fp3055 RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF RFD3055, RFD3055SM, RFP3055 TA49082. FD3055 IS433 Fp3055 RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A

    f3055l

    Abstract: FP3055LE f3055 Fp3055 FP3055L RFD3055LESM RFP3055LE RFD3055LE AN9321 RFD3055LESM9A
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE TA49158. f3055l FP3055LE f3055 Fp3055 FP3055L RFD3055LESM RFP3055LE RFD3055LE AN9321 RFD3055LESM9A

    FP3055LE

    Abstract: f3055l
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE TA49158. FP3055LE f3055l

    F3055L

    Abstract: FP3055LE Fp3055 f3055 AN9321 RFD3055LE RFD3055LESM RFD3055LESM9A RFP3055LE TB334
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE TA49158. F3055L FP3055LE Fp3055 f3055 AN9321 RFD3055LE RFD3055LESM RFD3055LESM9A RFP3055LE TB334

    FD3055

    Abstract: Fp3055
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet Title FD3 5, D30 SM, P30 bt A, V, 50 m, anwer OSTs utho eyrds terrpoon, July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF RFD3055, RFD3055SM, RFP3055 FD3055 Fp3055

    f3055l

    Abstract: FP3055LE f3055 RFP3055LE
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet Title FD3 5L, D30 LSM November 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE f3055l FP3055LE f3055 RFP3055LE

    AN-7514

    Abstract: fark AN-7517 RFP22N10 RFP3055 RFP45N06 RFP50N06 RFP70N06 ierc heatsink PSD1-2U
    Text: Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads Application Note Introduction Title N75 ubct ractil pect of ing werOS an tors ive duce ads) utho ) eyords nter- Many of the more recent applications of PowerMOS transistors, particularly low voltage devices, have been as solenoid


    Original     		PDF

    AN9321

    Abstract: RFP50N06 AN-7517 RFP22N10 RFP3055 RFP45N06 RFP70N06 ierc heatsink
    Text: Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads Application Note Introduction Title N95 bt actipect f ng werOS antors ve uce ads utho eyrds ter- Many of the more recent applications of PowerMOS transistors, particularly low voltage devices, have been as solenoid


    Original     		PDF

    rh-24v

    Abstract: JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C
    Text: Date Created: 2/24/2004 Date Issued: 4/8/2004 PCN # 20040802 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF RFG70N06 RFP45N06 HRF3205 HUF75307D3ST HUF75309D3S HUF75309T3ST HUF75321D3ST HUF75321S3ST R4908 HUF75329D3ST rh-24v JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd