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    AN749

    Abstract: mrf154 amplifier Fair-Rite bead MC1723 MRF154 1N4148 1N5362
    Text: Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range.


    Original     		PDF MRF154/D MRF154 AN749 mrf154 amplifier Fair-Rite bead MC1723 MRF154 1N4148 1N5362

    mrf154 amplifier

    Abstract: on 5269 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics


    Original     		PDF MRF154 MRF154 mrf154 amplifier on 5269 transistor

    w amplifier 30mhz

    Abstract: 1N5362
    Text: VRF154FL 50V 600W 80MHz RF POWER VERTICAL MOSFET The VRF154FL is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and inter-modulation


    Original     		PDF VRF154FL 80MHz VRF154FL 100MHz 30MHz, w amplifier 30mhz 1N5362

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range.


    Original     		PDF MRF154/D MRF154 MRF154/D*

    mrf154 amplifier

    Abstract: AN749 MRF154 trifilar mc1723 ic 2225C MC1723 application notes 36803 T1/FERRITE TRANSFORMER Nippon capacitors
    Text: MOTOROLA Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. ARCHIVE INFORMATION


    Original     		PDF MRF154/D MRF154 mrf154 amplifier AN749 MRF154 trifilar mc1723 ic 2225C MC1723 application notes 36803 T1/FERRITE TRANSFORMER Nippon capacitors

    mrf154 amplifier

    Abstract: mc1723 ic nippon ferrite AN749 application of mc1723 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS MRF154 rf mosfet power amplifier 1N4148 1N5362
    Text: MOTOROLA Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range.


    Original     		PDF MRF154/D MRF154 mrf154 amplifier mc1723 ic nippon ferrite AN749 application of mc1723 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS MRF154 rf mosfet power amplifier 1N4148 1N5362

    47nj capacitor

    Abstract: RF600 mcrc1 250GX-0300-55-22 Fair-Rite Products multicomp chip resistor ATC100B B06TJLC CDR33BX104AKYS ds2054
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 3, 12/2008 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in


    Original     		PDF MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1 47nj capacitor RF600 mcrc1 250GX-0300-55-22 Fair-Rite Products multicomp chip resistor ATC100B B06TJLC CDR33BX104AKYS ds2054

    CAPACITOR chip murata mtbf

    Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136
    Text: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


    Original     		PDF MRF15030/D MRF15030 MRF15030/D* CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


    Original     		PDF MRF15030/D MRF15030 MRF15030/D*

    Fair-Rite bead

    Abstract: AN3263 ATC100B102JT50XT MRF6V2300N MRF6V2300NBR1 ds2054 multicomp chip resistor 100 pf, ATC Chip Capacitor 567 tone ATC100B161JT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in


    Original     		PDF MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 Fair-Rite bead AN3263 ATC100B102JT50XT MRF6V2300N MRF6V2300NBR1 ds2054 multicomp chip resistor 100 pf, ATC Chip Capacitor 567 tone ATC100B161JT500XT

    imd 5210

    Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282SR1 MRF282ZR1 imd 5210 MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL

    100B270JCA500X

    Abstract: 100B390JCA500X 100B201JCA500X GX03005522 MRF282
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282SR1 MRF282ZR1 100B270JCA500X 100B390JCA500X 100B201JCA500X GX03005522 MRF282

    microstrip

    Abstract: microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier


    Original     		PDF MRF282SR1 MRF282ZR1 microstrip microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS

    MJD310

    Abstract: mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282
    Text: Freescale Semiconductor Technical Data Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282SR1 MRF282ZR1 MJD310 mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282

    178 09T

    Abstract: capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.


    OCR Scan     		PDF BD135) BD136) GX-0300-55-22, MRF15030 178 09T capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor

    rohm mtbf

    Abstract: CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15030 The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


    OCR Scan     		PDF MRF15030 BD135) BD136) GX-0300-55-22, MRF15030 rohm mtbf CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ

    capacitor mallory

    Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF15030 Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.


    OCR Scan     		PDF BD135) BD136) MRF15030 capacitor mallory RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf

    DIODE ku 1490

    Abstract: ku 1490 spectra Ve 1200 capacitor ase 104
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 D e sig n e d fo r 26 v o lts m icro w a ve la rg e -s ig n a l, c o m m o n em itte r, cla s s A and c la s s A B lin e a r a m p lifie r a p p lic a tio n s in in d u s tria l a n d c o m m e rc ia l F M /A M


    OCR Scan     		PDF MRF15030 BD135) MRF15030 DIODE ku 1490 ku 1490 spectra Ve 1200 capacitor ase 104

    Fair-Rite ATC

    Abstract: B074 dale rs-2b dale rs-2b 3w 2B43B SURFACE MOUNT RESISTOR 200B M177 SD2923 f-30MHz
    Text: SD2923 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION Pout = 300W MIN. WITH 16 dB GAIN @ 30 MHz . THERMALLY ENHANCED PACKAGING DESCRIPTION The SD2923 is a gold metallized N-Channel MOS


    OCR Scan     		PDF SD2923 SD2923 sc1421d SC14220 008706A L0G1101 Fair-Rite ATC B074 dale rs-2b dale rs-2b 3w 2B43B SURFACE MOUNT RESISTOR 200B M177 f-30MHz

    KTC transformer

    Abstract: 50V ELNA Electrolytic capacitor elna 50v M113 SD2918 TSD2918 mallory tt TRANSISTOR 8073 mallory tbs 2643801OOZ
    Text: SD2918 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs ADVANCE DATA . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . P o u t = 30 W MIN. WITH 18 dB GAIN @ 30 MHz DESCRIPTION The SD2918 is a gold metallized N-Channel MOS


    OCR Scan     		PDF SD2918 SD2918 pc12230 1010936D KTC transformer 50V ELNA Electrolytic capacitor elna 50v M113 TSD2918 mallory tt TRANSISTOR 8073 mallory tbs 2643801OOZ

    diode wb1

    Abstract: MRF896S WB1 DIODE diode wb2 1n4001 motorola ECEV1HV100R
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F896 M R F896S The RF Line NPN S ilico n RF P o w er T ran sisto rs Motorola Prafanwl DavlcM Designed for 24 Volt UHF large-signal, common emitter, Class AB and Class A linear am plifier applications in industrial and commercial FM/AM equipment


    OCR Scan     		PDF MRF896 MRF896S diode wb1 WB1 DIODE diode wb2 1n4001 motorola ECEV1HV100R

    HM 84 AB

    Abstract: IFR 840 MRF896 1J100 HM18
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors Designed for 24 Volt UHF large-signal, com mon emitter, Class AB and Class A linear am plifier applications in industrial and com mercial FM/AM equipment operating in the range 8 0 0 -9 6 0 MHz.


    OCR Scan     		PDF MRF896 4-j32 HM 84 AB IFR 840 1J100 HM18

    vk200 ferrite bead

    Abstract: 470-512MHz MRF650 mount chip transistor 13W uhf 13W amplifier motorola rca
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N PN Silico n RF Pow er T ran sistor Designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440,470, 512 MHz 12.5 Volt Characteristics


    OCR Scan     		PDF MRF650 vk200 ferrite bead 470-512MHz mount chip transistor 13W uhf 13W amplifier motorola rca

    vk200 ferrite bead

    Abstract: mrf650 3HS0006-91 irl 52 50TC14 JMC501
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics


    OCR Scan     		PDF MRF650 vk200 ferrite bead 3HS0006-91 irl 52 50TC14 JMC501