f 948
Abstract: TOP 948 f948
Text: FC-36A 5.5 x 5 mm MOSFET BGA Tape and Reel Dimensions FC-36A MOSFET BGA Packaging Configuration: Figure 1 F63TNR Label Packaging Description: Antistatic Cover Tape FC-36A MOSFET BGA parts are shipped in tape. The carrier tape is made from a dissipative carbon filled
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FC-36A
F63TNR
330cm
f 948
TOP 948
f948
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T0030
Abstract: DO-201AD F63TNR
Text: DO-201AD/AE Tape and Reel Data DO-201AD/AE Packaging Configuration: Figure 1.0 F63TNR or Human Readable Label DO-201AD/AE TNR Intermediate Container Options Corrugated Outer liner White Anode Red/Blue (Cathode) Kraft Paper wounded between layers 340mm x 340mm x 410mm
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DO-201AD/AE
F63TNR
340mm
410mm
CBVK741B019
T0030
DO-201AD
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F63TNR
Abstract: F852 D84Z CBVK741B019 FDR835N 831N
Text: SuperSOTTM-8 Tape and Reel Data and Package Dimensions SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Anti static Cover Tape SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive carbo n filled po ly carbon ate
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F63TNR
330cm
177cm
F852
D84Z
CBVK741B019
FDR835N
831N
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CBVK741B019
Abstract: F63TNR F852 FDR835N
Text: SuperSOTTM-8 Tape and Reel Data SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Anti static Cover Tape SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive carbo n filled po ly carbon ate
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F63TNR
330cm
177cm
CBVK741B019
F852
FDR835N
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Untitled
Abstract: No abstract text available
Text: DO-41 Plastic Tape and Reel Data DO-41 (Plastic) Packaging Configuration: Figure 1.0 F63TNR/Human Readable Label DO-41 (Plastic) TNR Intermediate Container Options Corrugated Outer liner White (Anode) Red/Blue (Cathode) Kraft Paper wounded between layers
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DO-41
F63TNR/Human
340mm
F63TNR
CBVK741B019
1N4741A
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2N4401_D11Z
Abstract: Fairchild taping TO-92 TO-92 Tape and Reel Data D81Z J60Z
Text: TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION See Fig 2.0 for various Reeling Styles BOXTNR Label 5 Reels per Intermediate Box Customized Label F63TNR Label Customized Label 375mm x 267mm x 375mm Intermediate Box AMMO PACK OPTION
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F63TNR
375mm
267mm
327mm
158mm
135mm
333mm
231mm
183mm
2N4401_D11Z
Fairchild taping TO-92
TO-92 Tape and Reel Data D81Z
J60Z
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d84z
Abstract: 01246 SOT223 top 223
Text: SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Antistatic Cover Tape SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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OT-223
330cm
177cm
OT-223
d84z
01246
SOT223
top 223
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AT 30B
Abstract: FC-30B 942b F942B
Text: FC-30B 3.5 x 4 mm MOSFET BGA Tape and Reel Dimensions FC-30B MOSFET BGA Packaging Configuration: Figure 1 F63TNR Label Packaging Description: FC-30B MOSFET BGA parts are shipped in tape. The carrier tape if made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film
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FC-30B
F63TNR
330cm
AT 30B
942b
F942B
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corrugated box spec
Abstract: T0030 CBVK741B019 Fairchild taping F63TNR F63TNR 3.2
Text: DO-15 Tape and Reel Data DO-15 Packaging Configuration: Figure 1.0 F63TNR/Human Readable Label Corrugated Outer liner DO-15 TNR Intermediate Container Options White Anode Red/Blue (Cathode) Kraft Paper wounded between layers F63TNR Label sample DO-15 Packaging
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DO-15
F63TNR/Human
F63TNR
340mm
410mm
CBVK741B019
corrugated box spec
T0030
CBVK741B019
Fairchild taping
F63TNR 3.2
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CBVK741B019
Abstract: F63TNR F852 PN2222A corrugated box spec
Text: SOT-223 Tape and Reel Data SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Antistatic Cover Tape SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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OT-223
F63TNR
330cm
177cm
CBVK741B019
F852
PN2222A
corrugated box spec
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MPSA65
Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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MMBTA65
PZTA65
OT-23
OT-223
MPSA64
OT-223
MPSA65
CBVK741B019
F63TNR
MMBTA65
PN2222N
PZTA65
bel 188 transistor
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Si4450DY
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Text: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4450DY
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
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On semiconductor date Code sot-223
Abstract: BCP56 CBVK741B019 F63TNR F852 PN2222A pcb thermal sot-223 4 layer sot-223 package dimensions
Text: BCP56 BCP56 C B C E SOT-223 NPN General Purpose Amplifier These devices are designed for general purpose medium power amplifiers and switches requiring collector currents to 1A. Sourced from Process 39. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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BCP56
OT-223
On semiconductor date Code sot-223
BCP56
CBVK741B019
F63TNR
F852
PN2222A
pcb thermal sot-223 4 layer
sot-223 package dimensions
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CBVK741B019
Abstract: F63TNR F852 FDS6814 FDS9953A L86Z AA MARKING CODE SO8
Text: FDS6814 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process. It has been optimized for power management applications which require a wide
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FDS6814
CBVK741B019
F63TNR
F852
FDS6814
FDS9953A
L86Z
AA MARKING CODE SO8
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SI9955DY
Abstract: fairchild NDS 1182
Text: Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9955DY
fairchild NDS
1182
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Untitled
Abstract: No abstract text available
Text: FDS3690 100V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • RDS ON = 0.066 Ω @ VGS = 6 V.
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FDS3690
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transistor 2N5461
Abstract: No abstract text available
Text: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.
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2N5460
2N5461
2N5462
MMBF5460
MMBF5461
2N5462
transistor 2N5461
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Untitled
Abstract: No abstract text available
Text: FDS2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.2 A, 200 V. RDS ON = 0.120 Ω @ VGS = 10 V
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FDS2670
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Untitled
Abstract: No abstract text available
Text: Si4420DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4420DY
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Untitled
Abstract: No abstract text available
Text: Si9945DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9945DY
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FDR835N
Abstract: 831N
Text: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDR6678A
FDR835N
831N
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PART NUMBER MARKING SC70-6
Abstract: pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70
Text: FFB3946 FFB3946 E2 B2 C1 Package: SC70-6 Device Marking: .AB Note: The " . " dot signifies Pin 1 C2 B1 Transistor 1 is NPN device, Transistor 2 is PNP device. E1 NPN & PNP General Purpose Amplifier SC70-6 Surface Mount Package ThIs dual complementary device was designed for use as a general purpose amplifier and switching
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FFB3946
SC70-6
2N3904
2N3906
PART NUMBER MARKING SC70-6
pin configuration NPN transistor 2N3904
MARKING CODE 21 SC70
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Untitled
Abstract: No abstract text available
Text: Si4412DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4412DY
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2539a
Abstract: IC TRACE CODE ON BOX LABEL INFORMATION AA MARKING CODE SO8 marking code ng Fairchild TRACE CODE ON BOX PACKING LABEL
Text: FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate
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FDS5670
FDS5670
2539a
IC TRACE CODE ON BOX LABEL INFORMATION
AA MARKING CODE SO8
marking code ng Fairchild
TRACE CODE ON BOX PACKING LABEL
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