Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    F4 SMD TRANSISTOR Search Results

    F4 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    F4 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bd139 equivalent transistor

    Abstract: Str W 5754 PHILIPS colour television schematic 14 diode gp 805 CIRCUIT DIAGRAM OF BD139 140 AN98014 BD139 PIN DIAGRAM 222285247104 china tv schematic diagram tv receiver schematic diagram PHILIPS
    Text: APPLICATION NOTE A broadband 150 W amplifier for band IV & V TV transmitters based on the BLV862 AN98014 Philips Semiconductors A broadband 150 W amplifier for band IV & V TV transmitters based on the BLV862 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 TRANSISTOR DESCRIPTION


    Original     		PDF BLV862 AN98014 SCA57 bd139 equivalent transistor Str W 5754 PHILIPS colour television schematic 14 diode gp 805 CIRCUIT DIAGRAM OF BD139 140 AN98014 BD139 PIN DIAGRAM 222285247104 china tv schematic diagram tv receiver schematic diagram PHILIPS

    A7 SMD TRANSISTOR

    Abstract: SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor
    Text: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8kx8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64k CMOS • Electrically Screened to SMD # 5962-95626 [ /Title PROM, organized in an 8k word by 8-bit format. The chip is


    Original     		PDF HS-6664RH HS-6664RH HS6664R A7 SMD TRANSISTOR SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor

    A7 SMD TRANSISTOR

    Abstract: SMD Transistor A12 smd transistor A11 A9 transistor SMD SMD a7 Transistor smd transistor A7 smd transistor A8 5962F9562601VYC SMD A8 Transistor smd a10
    Text: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8K x 8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process,


    Original     		PDF HS-6664RH HS-6664RH A7 SMD TRANSISTOR SMD Transistor A12 smd transistor A11 A9 transistor SMD SMD a7 Transistor smd transistor A7 smd transistor A8 5962F9562601VYC SMD A8 Transistor smd a10

    V23076-A1001-D143

    Abstract: v23076-a3001-d142 V23084-C2001-A303 V23076-A1001-C133 tyco v23076-a3001-c132 V23133-A1001 v23076-a3001-c132 V23134-M1052-C642 ipod touch circuit diagram AXICOM Relay v23
    Text: 00-Cover_1.qxd 17.03.2008 12:00 Uhr Seite 1 RoHS Ready Automotive Relays and Switching Modules 00-Cover_1.qxd 17.03.2008 12:00 Uhr Seite 2 T YCO E L E C T R O N I C S G LO B A L AU TO M OT I V E D I V I S I O N 01_Introduction_p1-34_2.qxd 17.03.2008 12:43 Uhr


    Original     		PDF

    transistor SMD g 28

    Abstract: No abstract text available
    Text: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 3 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.


    Original     		PDF BLF8G20LS-400PV; BLF8G20LS-400PGV BLF8G20LS-400PV LS-400PGV transistor SMD g 28

    HS-1840

    Abstract: HS-1840ARH 5962F9563002QYC smd transistor F5 f5 smd transistor hs1840 5962F9563002VYC MKT 1840 5962F9563002QXC 5962F9563002V9A
    Text: HS-1840ARH Data Sheet August 1999 Rad-Hard 16 Channel CMOS Analog Multiplexer with High-Z Analog Input Protection File Number 4355.1 Features • Electrically Screened to SMD # 5962-95630 The HS-1840ARH is a radiation hardened, monolithic 16 channel multiplexer constructed with the Intersil Rad-Hard


    Original     		PDF HS-1840ARH HS-1840ARH HS-1840 5962F9563002QYC smd transistor F5 f5 smd transistor hs1840 5962F9563002VYC MKT 1840 5962F9563002QXC 5962F9563002V9A

    HS-1840ARH

    Abstract: 5962F9563002VYC 5962F9563002QYC 5962F9563002VXC HS-1840 HS9-1840ARH 5962F9563002QXC 5962F9563002V9A HS-1840RH hs1840
    Text: HS-1840ARH Data Sheet Rad-Hard 16 Channel CMOS Analog Multiplexer with High-Z Analog Input Protection The HS-1840ARH is a radiation hardened, monolithic 16 channel multiplexer constructed with the Intersil Rad-Hard Silicon Gate, bonded wafer, Dielectric Isolation process. It is


    Original     		PDF HS-1840ARH HS-1840ARH 5962F9563002VYC 5962F9563002QYC 5962F9563002VXC HS-1840 HS9-1840ARH 5962F9563002QXC 5962F9563002V9A HS-1840RH hs1840

    C5750X7R1H106M

    Abstract: BLF6G20LS-140 C4532X7R1H475M RF35 smd transistor equivalent table
    Text: BLF6G20LS-140 Power LDMOS transistor Rev. 01 — 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G20LS-140 BLF6G20LS-140 C5750X7R1H106M C4532X7R1H475M RF35 smd transistor equivalent table

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 1 — 6 June 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.


    Original     		PDF BLF8G20LS-400PV; BLF8G20LS-400PGV BLF8G20LS-400PV LS-400PGV

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 1 — 25 June 2013 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.


    Original     		PDF BLF8G20LS-400PV; BLF8G20LS-400PGV BLF8G20LS-400PV LS-400PGV

    BLF6G22LS-100

    Abstract: RF35 TRANSISTOR SMD BV
    Text: BLF6G22LS-100 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF6G22LS-100 BLF6G22LS-100 RF35 TRANSISTOR SMD BV

    D2375

    Abstract: BLF6G10S-45 RF35
    Text: BLF6G10S-45 UHF power LDMOS transistor Rev. 01 — 23 February 2007 Preliminary data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10S-45 BLF6G10S-45 D2375 RF35

    Untitled

    Abstract: No abstract text available
    Text: BLF6G10S-45 Power LDMOS transistor Rev. 03 — 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G10S-45 BLF6G10S-45

    transistor 9575

    Abstract: BLF6G10-160RN BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1
    Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 — 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN transistor 9575 BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1

    Untitled

    Abstract: No abstract text available
    Text: BLF6G10LS-160 Power LDMOS transistor Rev. 01 — 29 September 2008 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10LS-160 BLF6G10LS-160

    BLF6G10LS-160RN

    Abstract: TRANSISTOR SMD BV BLF6G10-160RN RF35 nxp TRANSISTOR SMD 13
    Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN BLF6G10LS-160RN TRANSISTOR SMD BV RF35 nxp TRANSISTOR SMD 13

    SMD T28

    Abstract: 5962D9569301V9A 5962D9569301VXA HS-0546 HS-0546RH HS-0547RH HS1B-0547 6B smd transistor data 10K115
    Text: HS-0546RH, HS-0547RH Data Sheet Radiation Hardened Single 16/Differential 8 Channel CMOS Analog Multiplexers with Active Overvoltage Protection The HS-0546RH and HS-0547RH are radiation hardened analog multiplexers with Active Overvoltage Protection and guaranteed rON matching. Analog input levels may greatly


    Original     		PDF HS-0546RH, HS-0547RH 16/Differential HS-0546RH HS-0547RH SMD T28 5962D9569301V9A 5962D9569301VXA HS-0546 HS1B-0547 6B smd transistor data 10K115

    SMD T28

    Abstract: smd marking f2 SMD TRANSISTOR MARKING 6B smd transistor marking A3 10K115 5962D9569302VXC IN-7A HS-0546 HS-0546RH HS-0547RH
    Text: HS-0546RH, HS-0547RH Data Sheet March 13, 2006 Radiation Hardened Single 16/Differential 8 Channel CMOS Analog Multiplexers with Active Overvoltage Protection The HS-0546RH and HS-0547RH are radiation hardened analog multiplexers with Active Overvoltage Protection and


    Original     		PDF HS-0546RH, HS-0547RH 16/Differential HS-0546RH HS-0547RH FN3544 SMD T28 smd marking f2 SMD TRANSISTOR MARKING 6B smd transistor marking A3 10K115 5962D9569302VXC IN-7A HS-0546

    d2375

    Abstract: BLF6G10S-45 RF35
    Text: BLF6G10S-45 Power LDMOS transistor Rev. 03 — 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G10S-45 BLF6G10S-45 d2375 RF35

    Untitled

    Abstract: No abstract text available
    Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN

    SMD T28

    Abstract: IN-7A 5962D9569301V9A 5962D9569301VXA HS-0546 HS-0546RH HS-0547RH 10K115 GDIP1-T28
    Text: HS-0546RH, HS-0547RH TM Data Sheet August 2001 Radiation Hardened Single 16/Differential 8 Channel CMOS Analog Multiplexers with Active Overvoltage Protection tle 6R S7R iadle ifn8 nOS ti- ve r- The HS-0546RH and HS-0547RH are radiation hardened analog multiplexers with Active Overvoltage Protection and


    Original     		PDF HS-0546RH, HS-0547RH 16/Differential HS-0546RH HS-0547RH SMD T28 IN-7A 5962D9569301V9A 5962D9569301VXA HS-0546 10K115 GDIP1-T28

    Untitled

    Abstract: No abstract text available
    Text: User Guide 004 lSL8272MEVAL2Z Evaluation Board User Guide Description Key Features The ISL8272M is a 50A step-down DC/DC power supply module with an integrated digital PWM controller, dual-phase synchronous power switches, inductors and passives. Only input, output capacitors and minimal passives are needed to


    Original     		PDF lSL8272MEVAL2Z ISL8272M ISL8272M ISL8272MEVAL2Z 421kHz 421kHz. UG004

    5cp smd

    Abstract: smd 3fp 5Bp smd smd code marking 2A sot23 p2g SMD SMD Code BJP 60 BC857B sot23 3Bp smd marking codes transistors sot-23 26 JB MARKING SOT-23
    Text: General Purpose SMD PNP Transistors 11 General Purpose SMD® PNP Transistors Description Mechanical Data Philips Components general purpose transistors combine the highest quality standards with state-of-the-art pro­ duction equipment to fulfill the need for generic, low-cost


    OCR Scan     		PDF OT-23 OT-89 OT-143 OT-223 OT-223 5cp smd smd 3fp 5Bp smd smd code marking 2A sot23 p2g SMD SMD Code BJP 60 BC857B sot23 3Bp smd marking codes transistors sot-23 26 JB MARKING SOT-23

    PZTA93

    Abstract: PZTA92 2B025 SMD IC 2025
    Text: • □□ 2b 0 2 5 735 H A P X N AUER P H I L I P S / D I S C R E T E PZTA92 PZTA93 b?E D SILICON EPITAXIAL TRANSISTORS PNP transistors in a m icrom iniature SMD envelope SOT-223 . They are prim arily intended fo r use in telephony and professional communication equipment.


    OCR Scan     		PDF 2b025 PZTA92 PZTA93 OT-223) PZTA92 PZTA93 SMD IC 2025