RF2364
Abstract: RF2365 f236 sot23-5 rf amplifier p12
Text: RF2365 3V LOW NOISE AMPLIFIER Typical Applications • DCS GSM • 2.4GHz Systems • PCS CDMA • General Purpose Amplification • PCS TDMA • Commercial and Consumer Systems Product Description U F pg O ra R de d N P E ro W du ct D R ES F2 36 IG 4 N The RF2365 is a low noise amplifier with a high dynamic
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RF2365
RF2365
RF2364
f236
sot23-5 rf amplifier p12
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L282 ST
Abstract: L281 L282 TL431 TS3431 SOT-23-3Lpackage sot23 L282 ST TL431 SOT-23 MARKING AKV
Text: TS3431 1.24V PROGRAMMABLE SHUNT VOLTAGE REFERENCE • ADJUSTABLE OUTPUT VOLTAGE 1.24 to 24V ■ SEVERAL PRECISION @ 25°C ±2%, ±1% and ±0.5% ■ SINK CURRENT CAPABILITY 0.4 to 100mA ■ INDUSTRIAL TEMPERATURE RANGE: -40 to +125°C L SOT23-3L Plastic Micropackage
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TS3431
100mA
OT23-3L
TL431
TS3431
OT23-3
L282 ST
L281
L282
TL431
SOT-23-3Lpackage
sot23 L282
ST TL431 SOT-23
MARKING AKV
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Untitled
Abstract: No abstract text available
Text: 62 7 BFU520A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU520A is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU520A
BFU520A
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: 62 7 BFU530A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU530A is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU530A
BFU530A
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: 62 7 BFU550A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU550A is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU550A
BFU550A
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: AH373 Internal Pull-up Hall Effect Latch Features General Description - 2.2V to 20V DC operation voltage - Built-in pull-up resistor - 25mA output sink current - Operating temperature: −40°C ~ +125°C - Package: SIP3, SOT23 AH373 is a single-digital-output Hall-effect sensor
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AH373
AH373
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Untitled
Abstract: No abstract text available
Text: AH375 Single Phase Hall Effect Latch Features General Description - 2.2V to 20V DC operation voltage - Temperature compensation - Wide operating voltage range - Open drain pre-driver - 25mA maximum sinking output current - Package: SIP3, SOT23 AH375 is an integrated Hall effect latched sensor
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AH375
AH375
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SOT23 hall
Abstract: REGULATOR AVR R 129 Rev A AH337
Text: AH337 Single Phase Hall Effect Switch Features General Description - 4.2V to 28V DC operation voltage - Temperature compensation - Wide operating voltage range - Open drain pre-driver - 25mA maximum sinking output current. - Package: SIP3, SOT23 AH337 is an switched Hall-Effect IC which is for
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AH337
AH337
SOT23 hall
REGULATOR AVR R 129 Rev A
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EDSD-1L8MM-REEL
Abstract: QFn 64 tape carrier
Text: TAPE AND REEL TAPE AND REEL SPECIFICATIONS—SURFACE MOUNT Tape and Reel Packing Tape and reel packing is available for all SO, TSOT thin SOT23 , SOT-23 3L/4L, SOT-223, SSOP, TSSOP, QFN, DFN and DD packages in accordance with EIA Specification 481-D with the following exceptions: (DFN(DCB), TSOT and SC70
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OT-23
OT-223,
481-D
EIA-418
356mm
EDSD-1L8MM-REEL
QFn 64 tape carrier
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BFS17P
Abstract: No abstract text available
Text: BFS17P NPN Silicon RF Transistor 3 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage
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BFS17P
VPS05161
Jul-12-2001
BFS17P
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KF5N50
Abstract: kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge MB6S mje13005 DF06 IC kf13n50
Text: Package Line-up Outline Name ESM USM TSM SOT-23 FLP-8 DPAK FLP-14 Size[㎣] 1.65x0.85 2.0×1.25 2.9×1.6 2.93×1.3 4.85×3.94×1.6 6.6×6.1 8.66×3.94×1.63 Type No. Package MB6S / M VRRM MBS / M IF Type No. KTC3003 HV 0.5A 600V DF06(S) DF(S) 1N4007(G) DO-41
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OT-23
FLP-14
KTC3003
1N4007
DO-41
MJE13003
MJE13005
O-126
KF5N50
kf12n60
IC 1N4007
diode 400V 4A
TO220IS
1N4007 diode bridge
MB6S
DF06 IC
kf13n50
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HT7044A-1
Abstract: HT7027A-1 HT7039A-1 HT7050A-1 0c sot89 HT7033A-1 HT7022A-1 HT7024A-1 HT70XXA-1 marking code w2 sot23-5
Text: HT70XXA-1 TinyPowerTM Voltage Detector Features • Low power consumption · Output voltage accuracy: tolerance ± 3% · Low temperature coefficient · Built-in hysteresis characteristic · High input voltage range up to 24V · TO92, SOT89 and SOT23-5 package
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HT70XXA-1
OT23-5
HT70XXA-1
HT7044A-1
HT7027A-1
HT7039A-1
HT7050A-1
0c sot89
HT7033A-1
HT7022A-1
HT7024A-1
marking code w2 sot23-5
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BFS17P
Abstract: No abstract text available
Text: BFS17P NPN Silicon RF Transistor 3 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage
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BFS17P
VPS05161
BFS17P
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Untitled
Abstract: No abstract text available
Text: HT70xxA-1 TinyPowerTM Voltage Detector Features • Low power consumption · Output voltage accuracy: tolerance ± 3% · Low temperature coefficient · Built-in hysteresis characteristic · High input voltage range up to 24V · TO92, SOT89, SOT23 and SOT23-5 package
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HT70xxA-1
OT23-5
HT70xxA-1
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Untitled
Abstract: No abstract text available
Text: HT70xxA-2 TinyPowerTM Voltage Detector Features • Low power consumption · Output voltage accuracy: tolerance ± 1% · Low temperature coefficient · Built-in hysteresis characteristic · High input voltage range up to 24V · TO92, SOT89 and SOT23-5 package
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HT70xxA-2
OT23-5
HT70xxA-2
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Untitled
Abstract: No abstract text available
Text: HT70xxA-1 TinyPowerTM Voltage Detector Features • Low power consumption · Output voltage accuracy: tolerance ± 3% · Low temperature coefficient · Built-in hysteresis characteristic · High input voltage range up to 24V · TO92, SOT89, SOT23 and SOT23-5 package
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HT70xxA-1
OT23-5
HT70xxA-1
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IrL 1540 N
Abstract: 1540MHz F1540 ATC100 UGF15030 Cree Microwave ZENER 26v 10UF 22UF
Text: UGF15030 30W, 1435-1540 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 1435 to 1540 MHz. Rated with a minimum output power of 30W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier
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UGF15030
26VDC,
1540MHz,
UGF15030F
UGF15030
IrL 1540 N
1540MHz
F1540
ATC100
Cree Microwave
ZENER 26v
10UF
22UF
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potentiometer 1k ohm
Abstract: No abstract text available
Text: UGF09085 90W, 865-880 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband Commercial and Industrial applications in the frequency band 865 to 890 MHz. Rated with a minimum output power of 90W, it is ideal for large signal common source
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UGF09085
MRF9085.
26VDC,
880MHz,
UGF09085F
UGF09085
potentiometer 1k ohm
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Untitled
Abstract: No abstract text available
Text: TSH110-TSH111-TSH112-TSH113-TSH114 Wide band low noise operational amplifiers Features TSH110: SOT23-5 ● Low noise: 3nV/√Hz ● Low supply current: 3.2mA ● 47mA output current ● Bandwidth: 100MHz ● 5V to 12V supply voltage ● Slew rate: 450V/µs
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TSH110-TSH111-TSH112-TSH113-TSH114
TSH110:
OT23-5
100MHz
TSH111:
OT23-5,
TSH112:
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st body marking TSH113IDT
Abstract: k309 TSH110 TSH111 TSH112 TSH113 TSH114 TSSOP14 SOT23-5 MARKING 56 marking st sot23-5 f
Text: TSH110-TSH111-TSH112-TSH113-TSH114 Wide band low noise operational amplifiers Features TSH110: SOT23-5 ● Low noise: 3nV/√Hz ● Low supply current: 3.2mA ● 47mA output current ● Bandwidth: 100MHz ● 5V to 12V supply voltage ● Slew rate: 450V/ s
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TSH110-TSH111-TSH112-TSH113-TSH114
TSH110:
OT23-5
100MHz
50V/s
TSH111:
OT23-5,
TSH112:
st body marking TSH113IDT
k309
TSH110
TSH111
TSH112
TSH113
TSH114
TSSOP14
SOT23-5 MARKING 56
marking st sot23-5 f
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capacitor 0805 avx
Abstract: 08055C103KATDA J940 08053G105ZATEA Bipolar NPN Transistor sot23 MRF21010
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to
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MRF21010
MRF21010
capacitor 0805 avx
08055C103KATDA
J940
08053G105ZATEA
Bipolar NPN Transistor sot23
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TT2222
Abstract: pDS4102-DL2A b8 sot23-3 AF14 LVCMOS15 LVCMOS25 LVCMOS33 tps64203dvb spi flash programmer sot23 Marking f7
Text: LatticeEC Advanced Evaluation Board – Revision C User’s Guide June 2005 ebug11_02.0 LatticeEC Advanced Evaluation Board – Revision C User’s Guide Lattice Semiconductor Introduction The LatticeEC Advanced Evaluation Board provides a convenient platform to evaluate, test, and debug designs
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ebug11
TPS78601KTT
TT2222
pDS4102-DL2A
b8 sot23-3
AF14
LVCMOS15
LVCMOS25
LVCMOS33
tps64203dvb
spi flash programmer
sot23 Marking f7
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8J marking
Abstract: diode IR 100 8K
Text: MMBZ5221B - MMBZ5259B 350mW SURFACE MOUNT ZENER DIODE Features • · · · Planar Die Construction 350mW Power Dissipation on FR-4 PCB General Purpose, Medium Current Ideally Suited for Automated Assembly Processes SOT-23 A B Mechanical Data · · · · ·
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MMBZ5221B
MMBZ5259B
350mW
OT-23
OT-23,
MIL-STD-202,
DS18011
8J marking
diode IR 100 8K
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vogt transformer s3
Abstract: A43AB VOGT A8 vogt f6 MC145575FU VOGT B1 vogt transformer k2 TQ3330 BC860C Motorola ti01 sot23
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MC145575/D M C 14 5 5 7 5 ISDN S/T Transceiver w ith PCI In te rfa c e CASE 983A ORDERING INFORMATION MC145575FU Quad Flat Package I EEPROM Optional All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
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MC145575/D
MC145575FU
TN98121000
MC14557E
vogt transformer s3
A43AB
VOGT A8
vogt f6
VOGT B1
vogt transformer k2
TQ3330
BC860C Motorola
ti01 sot23
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