Untitled
Abstract: No abstract text available
Text: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Contents1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION . 4 FEATURES . 4
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W94AD6KB
W94AD2KB
A01-004
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PDF
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A1833
Abstract: No abstract text available
Text: Advance‡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 banks MT46H256M16L2 – 32 Meg x 16 x 4 banks x 2 MT46H64M32LF – 16 Meg x 32 x 4 banks MT46H128M32L2 – 16 Meg x 32 x 4 banks x 2 MT46H256M32L4 – 16 Meg x 32 x 4 banks x 4
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MT46H128M16LF
MT46H256M16L2
MT46H64M32LF
MT46H128M32L2
MT46H256M32L4
09005aef83a73286
A1833
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PDF
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Untitled
Abstract: No abstract text available
Text: July 2007 HYB18M256320CFX–7.5 HYE18M256320CFX–7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Data S heet Rev.1.03 Data Sheet HY[B/E]18M256320CFX–7.5 256-Mbit DDR Mobile-RAM HYB18M256320CFX–7.5, HYE18M256320CFX–7.5 Revision History: Rev.1.03, 2007-07
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HYB18M256320CFX
HYE18M256320CFX
256-Mbit
18M256320CFX
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PDF
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MT46H64M16
Abstract: 6S55 MT46H64M16LF
Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options • Vdd/Vddq – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)
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MT46H64M16LF
MT46H32M32LF
09005aef82ce3074
MT46H64M16
6S55
MT46H64M16LF
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PDF
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s11 stopping compound
Abstract: DEF01
Text: 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)
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Original
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128Mb:
MT46H8M16LF
MT46H4M32LF
138ns.
09005aef8331b3e9/Source:
09005aef8331b3ce
s11 stopping compound
DEF01
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF– 8 Meg x 16 x 4 banks MT48H16M32LF – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Table 1: Features
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512Mb:
MT48H32M16LF
MT48H16M32LF
09005aef81ca5de4/Source:
09005aef81ca5e03
MT48H32M16LF
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-11464-1E MEMORY Consumer FCRAMTM CMOS 512M Bit 4 bank x 2M word x 64 bit Consumer Applications Specific Memory for SiP MB81EDS516445 • DESCRIPTION The Fujitsu MB81EDS516445 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double
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DS05-11464-1E
MB81EDS516445
MB81EDS516445
64-bit
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PDF
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MT46H128M16
Abstract: MT46H128M16LF MT46H64M32LF MT46H128 MT46H128M32L2 MT46H256M32 MT46H64M32 MT46H128M MT46H128M16L 240-ball
Text: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4
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Original
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MT46H128M16LF
MT46H64M32LF
MT46H128M32L2
MT46H256M32L4
MT46H256M32R4
09005aef8457b3eb
MT46H128M16
MT46H128M16LF
MT46H64M32LF
MT46H128
MT46H128M32L2
MT46H256M32
MT46H64M32
MT46H128M
MT46H128M16L
240-ball
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PDF
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circuit diagram of ddr ram
Abstract: HYB18M1G320BF
Text: March 2007 HYB18M 1G 320 B F– 7 . 5 HYE18M 1G 320 B F– 7 . 5 DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM RoHS compliant Data S heet Rev.1.00 Data Sheet HY[B/E]18M1G320BF 1-Gbit DDR Mobile-RAM HYB18M1G320BF–7.5, HYE18M1G320BF–7.5, Revision History: 2007-03, Rev.1.00
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HYB18M
HYE18M
18M1G320BF
HYB18M1G320BF
HYE18M1G320BF
02022006-J7N7-GYFP
circuit diagram of ddr ram
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PDF
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P-VFBGA 49 package
Abstract: ddr ram optimum recievers smd code a12 HYB18M512160BFX P-VFBGA-60-1
Text: November 2006 HYB18M512160BFX-7.5 DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant Data S heet Rev. 1.10 HYB18M512160BFX 512-Mbit DDR Mobile-RAM HYB18M512160BFX-7.5, , Revision History: 2006-11, Rev. 1.10 Page Subjects major changes since last revision
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HYB18M512160BFX-7
512-Mbit
HYB18M512160BFX
04052006-4SYQ-ZRN3
P-VFBGA 49 package
ddr ram
optimum recievers
smd code a12
HYB18M512160BFX
P-VFBGA-60-1
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ELPIDA lpddr
Abstract: 1GB-x16 samsung lpddr LPDDR2 SDRAM samsung MT46H64M16LF cross infineon power cycling
Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)
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MT46H64M16LF
MT46H32M32LF
09005aef83d9bee4
ELPIDA lpddr
1GB-x16
samsung lpddr
LPDDR2 SDRAM samsung
MT46H64M16LF cross
infineon power cycling
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PDF
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F0123456789
Abstract: TI-30X
Text: Funciones trigonométricas Conceptos matemáticos Conceptos generales Los estudiantes practican resolviendo relaciones de seno, coseno y tangente, y resolviendo problemas con relaciones trigonométricas. Introducción Introduzca las relaciones trigonométricas a los
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TI-30X
F0123456789
TI-30X
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11463-2E MEMORY Consumer FCRAMTM CMOS 512M Bit 4 bank x 2M word x 64 bit Consumer Applications Specific Memory for SiP MB81EDS516545 • DESCRIPTION The Fujitsu MB81EDS516545 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double
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Original
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DS05-11463-2E
MB81EDS516545
MB81EDS516545
64-bit
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PDF
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HYB18M512
Abstract: No abstract text available
Text: . Home > Products > Packages > Green Products > Introduction On 27.01.2003 the European Parliament and the council adopted the directives: 2002/95/EC on the Restriction of the use of certain Hazardous Substances in electrical and electronic
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2002/95/EC
2002/96/EC
04032006-xxxx-xxxx
18M512160BF
512-Mbit
P-VFBGA-60-1
HYB18M512
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PDF
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antilog
Abstract: logarithm F0123456789 TI-34 9824 base-10
Text: Logarithms and Antilogarithms 15 Keys Notes These numbered paragraphs provide explanations for the corresponding numbered keys on the illustration below. • The examples on the transparency masters assume all default settings. • E ends a logarithmic function.
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TI-34
F0123456789
antilog
logarithm
F0123456789
TI-34
9824
base-10
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PDF
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Am29BDD160GB64C
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29BDD160G
16-bit/512
32-Bit)
Am29BDD160GB64C
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am29f date code markings
Abstract: am29lv date code markings Am29BDD160GB64C
Text: ADVANCED INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29BDD160G
16-bit/512
32-Bit)
am29f date code markings
am29lv date code markings
Am29BDD160GB64C
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PDF
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Untitled
Abstract: No abstract text available
Text: 512Mb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks MT46H16M32LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks
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512Mb:
MT46H32M16LF
MT46H16M32LF
MT46H16M32LG
60-ball
90-ball
09005aef846e285e
512mb
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PDF
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T67M
Abstract: ELPIDA mobile dram LPDDR2
Text: 512Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks MT46H16M32LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks
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512Mb:
MT46H32M16LF
MT46H16M32LF
MT46H16M32LG
09005aef83dd2b3e
T67M
ELPIDA mobile dram LPDDR2
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11463-2E MEMORY Consumer FCRAMTM CMOS 512M Bit 4 bank x 2M word x 64 bit Consumer Applications Specific Memory for SiP MB81EDS516545 • DESCRIPTION The Fujitsu MB81EDS516545 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double
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Original
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DS05-11463-2E
MB81EDS516545
MB81EDS516545
64-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)
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Original
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128Mb:
MT46H8M16LF
MT46H4M32LF
09005aef82ce3074/Source:
09005aef82ce20c9
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PDF
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Untitled
Abstract: No abstract text available
Text: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • • • • • VDD/VDDQ – 1.8V/1.8V – 1.8V/1.2V1 • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks
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Original
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512Mb:
MT46H32M16LF
MT46H16M32LF
09005aef82d5d305/Source:
09005aef82d5d2e7
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PDF
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Untitled
Abstract: No abstract text available
Text: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)
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Original
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512Mb:
MT46H32M16LF
MT46H16M32LF
09005aef82ce3074/Source:
09005aef82ce20c9
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PDF
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MT46H32M16
Abstract: No abstract text available
Text: 512Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 Banks MT46H16M32LF – 4 Meg x 32 x 4 Banks Features • • • • • • • • • • • • • • • • • • • • Options • VDD/VDDQ
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Original
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512Mb:
MT46H32M16LF
MT46H16M32LF
09005aef82d5d305
MT46H32M16
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PDF
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