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    F MARKING 6PIN Search Results

    F MARKING 6PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    F MARKING 6PIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Leiterplatten-Layout Vorschlag für SMT Kontaktbezeichnung PCB-Layout Proposal for SMT contact marking 10,77 1,27 0,03 - Tape on Reel Packaging Verpackungseinheit: 700 Stück - Packaging unit: 700 pcs 0,03 9,46 5 x 1.27 = 2,21 Verpackt in Gurtverpackung 6,35


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    Untitled

    Abstract: No abstract text available
    Text: Leiterplatten-Layout Vorschlag für SMT PCB-Layout Proposal for SMT 0,8 Verpackt in Gurtverpackung - Tape on Reel Packaging Verpackungseinheit: 850 Stück - Packaging unit: 850 pcs 1,2 0,3 7,2 1,4 2,6 1,35 ±0,05 1,6 -0,03 contact marking at pin 1 10,77 ±0,03


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    Untitled

    Abstract: No abstract text available
    Text: Leiterplatten-Layout Vorschlag für SMT PCB-Layout Proposal for SMT 0,8 Verpackt in Gurtverpackung - Tape on Reel Packaging Verpackungseinheit: 850 Stück - Packaging unit: 850 pcs 1,2 0,3 7,2 1,4 2,6 1,35 ±0,05 1,6 -0,03 contact marking at pin 1 10,77 ±0,03


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    EPR61A40T

    Abstract: EPR61A40M D-82178 EPR61A20T epr61a40 EPR61A40S relay zettler EPR61B40T top mark smd mos smd 1C
    Text: NO. EXCEL CELL ELECTRONIC CO., LTD. Edition S P E C I FI C A T I O N 2 PAGE 1/11 A30956 7 EPR MOS RELAY 6PIN 1. FEATURES 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 No EMI/RFI Generation High reliability No moving parts Low drive power requirement (TTL/CMOS Compatible)


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    PDF A30956 E155181 D-82178 EPR61A40T EPR61A40M EPR61A20T epr61a40 EPR61A40S relay zettler EPR61B40T top mark smd mos smd 1C

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1078A CPH6003A RF Transistor http://onsemi.com 12V, 150mA, fT=7GHz, NPN Single CPH6 Features • • • • High gain fT=7GHz typ High Current (IC=150mA) Ultraminiature and thin 6pin package Large Collector Disspation (800mW) Specifications


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    PDF ENA1078A CPH6003A 150mA, 150mA) 800mW) 250mm2 A1078-7/7

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    Text: CPH6003A Ordering number : ENA1078A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor CPH6003A High-frequency Medium-power Amplifier Applications Features • • • • High gain fT=7GHz typ High Current (IC=150mA) Ultraminiature and thin 6pin package


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    PDF CPH6003A ENA1078A 150mA) 800mW) A1078-7/7

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    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE HN9C03FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C03FT V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 m o i im t f h


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    PDF HN9C03FT 2SC5086 500MHz 1000M

    2SC5256

    Abstract: 2SC5086 HN9C02FT VQE 11
    Text: TO SHIBA TENTATIVE HN9C02FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C02FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 MOUNTED DEVICES


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    PDF HN9C02FT 2SC5256 2SC5086 1000MHz 2000MHz 500MHz 1000MHz 2SC5086 HN9C02FT VQE 11

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    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE HN2C12FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 2 FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini ,6pins package : TU6


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    PDF HN2C12FT 2SC5096 1000MHz 2000MHz

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C10FE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6pins package : ES6 O o p MOUNTED DEVICES Q1/Q2


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    PDF HN3C10FE 2SC5086

    2SC5066

    Abstract: 2SC5096 HN9C22FT
    Text: TO SHIBA TENTATIVE HN9C22FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C22FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 MOUNTED DEVICES


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    PDF HN9C22FT 2SC5096 2SC5066 2000MHz 1000MHz 2000MHz 500MHz 1000MHz 2SC5066 2SC5096 HN9C22FT

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    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE HN9C09FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N9C09FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 MOUNTED DEVICES


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    PDF HN9C09FT N9C09FT 2SC5096 2000MHz 1000MHz --10V, --20mA, 500MHz

    2SC5086

    Abstract: HN2C10FT C2PP
    Text: TOSHIBA TENTATIVE HN2C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N2C1OFT Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 MOUNTED DEVICES Q1/Q2


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    PDF HN2C10FT 2SC5086 500MHz 2SC5086 HN2C10FT C2PP

    2SC5322

    Abstract: HN3C18FT
    Text: TO SH IBA TENTATIVE HN3C18FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FT Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 1.25 ± 0.1


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    PDF HN3C18FT 2SC5322 2SC5322 HN3C18FT

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    Abstract: No abstract text available
    Text: HN9C13FT TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HNQT1 3 FT • ■ u m ■ M F ■ ■ V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6


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    PDF HN9C13FT 2SC5066 2SC5261 2000MHz 500MHz 1000MHz 1000MHz

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    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE HN2C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N2C1OFT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6


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    PDF HN2C10FT 2SC5086 500MHz

    2SC5086

    Abstract: HN9C03FT
    Text: TOSHIBA TENTATIVE HN9C03FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C03FT Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 MOUNTED DEVICES Q1/Q2


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    PDF HN9C03FT 2SC5086 500MHz 1000MHz 1000MHz 2SC5086 HN9C03FT

    Untitled

    Abstract: No abstract text available
    Text: HN2C13FT TO SHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 3 FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6


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    PDF HN2C13FT 2SC5322 1000MHz 2000MHz

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE HN3C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 -1


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    PDF HN3C10FT 2SC5086 500MHz 1000M

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C10FE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6pins package : ES6 O o p MOUNTED DEVICES Q1/Q2


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    PDF HN3C10FE 2SC5086

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    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE HN9C02FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H M Q f 17 F T • ■ ■ V V m m Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini (6pins package : TU6


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    PDF HN9C02FT 2SC5256 2SC5086 2000MHz 1000M 500MHz --20mA,

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE HN9C16FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HNQfUFT • ■ u m ■ ■ Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6


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    PDF HN9C16FT 2SC5091 2SC5261 1000MHz 2000MHz

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    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE HN9C01 FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N Q r m • ■ u rn ■ FT ■ ■ V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6


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    PDF HN9C01 2SC5096 2SC5086 500MHz 1000MHz

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    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE HN9C14FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N Q T 1 AFT • ■ u m ■ ■ ■ ■ V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6


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    PDF HN9C14FT 2SC5066 2SC5066 500MHz 1000MHz