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    EUDYNA PACKAGING Search Results

    EUDYNA PACKAGING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    EUDYNA PACKAGING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FHX76LP

    Abstract: No abstract text available
    Text: FHX76LP Super Low Noise HEMT FEATURES • Low Noise Figure: NF=0.40dB Typ. @f=12GHz • High Associated Gain: Gas=13.5dB (Typ.)@f=12GHz • High Reliability • Small Size SMT Package • Tape and Reel Packaging Available DESCRIPTION TM The FHX76LP is a low noise SuperHEMT product designed for DBS


    Original     		PDF FHX76LP 12GHz FHX76LP Tota4888

    TM 1628 Datasheet

    Abstract: FHX76LP 083-6 s-parameter s11 s12 s21 10000 RM1101
    Text: FHX76LP Super Low Noise HEMT FEATURES • Low Noise Figure: NF=0.40dB Typ. @f=12GHz • High Associated Gain: Gas=13.5dB (Typ.)@f=12GHz • High Reliability • Small Size SMT Package • Tape and Reel Packaging Available DESCRIPTION TM The FHX76LP is a low noise SuperHEMT product designed for DBS


    Original     		PDF FHX76LP 12GHz FHX76LP Tota4888 TM 1628 Datasheet 083-6 s-parameter s11 s12 s21 10000 RM1101

    FHX76LP

    Abstract: NF04 065mm Eudyna Packaging
    Text: FHX76LP Super Low Noise HEMT FEATURES • Low Noise Figure: NF=0.40dB Typ. @f=12GHz • High Associated Gain: Gas=13.5dB (Typ.)@f=12GHz • High Reliability • Small Size SMT Package • Tape and Reel Packaging Available DESCRIPTION TM The FHX76LP is a low noise SuperHEMT product designed for DBS


    Original     		PDF FHX76LP 12GHz FHX76LP Temperatur4888 NF04 065mm Eudyna Packaging

    Eudyna Packaging

    Abstract: No abstract text available
    Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz Eudyna Packaging

    FHX04LG

    Abstract: FHX04 FHX05LG FHX06LG low noise hemt 2-18G 12GAS
    Text: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz FHX04LG FHX04 FHX05LG low noise hemt 2-18G 12GAS

    FHX35LP

    Abstract: FHX35LG WG 924 FHX35
    Text: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B Typ. @f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		PDF FHX35LG 12GHz FHX35LG 2-18GHz reliabili4888 FHX35LP WG 924 FHX35

    Untitled

    Abstract: No abstract text available
    Text: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B Typ. @f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		PDF FHX35LG 12GHz FHX35LG 2-18GHz the88

    Untitled

    Abstract: No abstract text available
    Text: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz

    FHX13LG

    Abstract: FHX13 FHX14LG
    Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz FHX13LG FHX13

    FHX04

    Abstract: FHX04LG FHX05LG FHX06LG Eudyna Packaging
    Text: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz FHX04 FHX04LG FHX05LG Eudyna Packaging

    GSM900

    Abstract: gsm900 Diplexer Eudyna Devices power amplifiers PCS1900 SP6T switch Diplexer GSM 900 FMM5321 DCS1800 FMM5321ZV GSM-900
    Text: FMM5321ZV Quad-band Antenna Switch Module GSM850 / GSM900 / DCS1800 / PCS1900 / GPRS Applications Features • • • • Quad-band, true SP6T PHEMT switch with integrated decoder and low pass filter Low insertion loss solution over the frequencies from 824 to 960 MHz and 1710 to 1990 MHz with no


    Original     		PDF FMM5321ZV GSM850 GSM900 DCS1800 PCS1900 GSM850/900 DCS1800/PCS1900 FMM5321ZV GSM850/900, DCS1800, gsm900 Diplexer Eudyna Devices power amplifiers SP6T switch Diplexer GSM 900 FMM5321 GSM-900

    low noise hemt

    Abstract: transistor hemt FHX35LG transistor HEMT GaS rf transistor 3742
    Text: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B Typ. @f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		PDF FHX35LG 12GHz FHX35LG 2-18GHz low noise hemt transistor hemt transistor HEMT GaS rf transistor 3742

    15A03

    Abstract: No abstract text available
    Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz 15A03

    low noise hemt

    Abstract: FHX13LG FHX*LG low noise hemt transistor FHX13 FHX14LG
    Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz low noise hemt FHX13LG FHX*LG low noise hemt transistor FHX13