esmt m13s2561616a
Abstract: M13S2561616A -5T M13S2561616A
Text: ESMT M13S2561616A Operation Temperature Condition -40~85°C Revision History Revision1.0 19 Oct. 2007 - Original Revision1.1 (06 Dec. 2007) - Add BGA package Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2007 Revision : 1.1 1/49 ESMT
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M13S2561616A
esmt m13s2561616a
M13S2561616A -5T
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Untitled
Abstract: No abstract text available
Text: ESMT Prelinminary M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Apr. 2006 Revision : 0.1 1/48 ESMT Prelinminary DDR SDRAM M13S2561616A 2M x 16 Bit x 4 Banks Double Data Rate SDRAM
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M13S2561616A
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Untitled
Abstract: No abstract text available
Text: ESMT M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Revision 1.0 (07 Jun. 2006) - Delete Preliminary at ever page - Revise typing error of page1 (2Mx16 4Mx16) Elite Semiconductor Memory Technology Inc. Publication Date : Jun. 2006 Revision : 1.0
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M13S2561616A
2Mx16
4Mx16)
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Untitled
Abstract: No abstract text available
Text: ESMT M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Revision 1.0 (07 Jun. 2006) - Delete Preliminary at ever page - Revise typing error of page1 Revision 1.1 (09 May. 2007) - Modify PD, DC specifications and MRS Revision 1.2 (12 Jun. 2007)
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M13S2561616A
M13S2561616A
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X16V
Abstract: No abstract text available
Text: ESMT M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Revision 1.0 (07 Jun. 2006) - Delete Preliminary at ever page - Revise typing error of page1 Revision 1.1 (09 May. 2007) - Modify PD, DC specifications and MRS Revision 1.2 (12 Jun. 2007)
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66-Lead
M13S2561616A
M13S2561616A
X16V
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M13S2561616A -5T
Abstract: M13S2561616A esmt m13s2561616a
Text: ESMT M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Revision 1.0 (07 Jun. 2006) - Delete Preliminary at ever page - Revise typing error of page1 Revision 1.1 (09 May. 2007) - Modify PD, DC specifications and MRS Revision 1.2 (12 Jun. 2007)
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M13S2561616A
M13S2561616A -5T
M13S2561616A
esmt m13s2561616a
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Untitled
Abstract: No abstract text available
Text: ESMT M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Revision 1.0 (07 Jun. 2006) - Delete Preliminary at ever page - Revise typing error of page1 Revision 1.1 (09 May. 2007) - Modify PD, DC specifications and MRS Revision 1.2 (12 Jun. 2007)
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66-Lead
M13S2561616A
M13S25616
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Untitled
Abstract: No abstract text available
Text: ESMT Preliminary M13S2561616A (2S) DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK )
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Untitled
Abstract: No abstract text available
Text: ESMT Preliminary M13S2561616A (2S) DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK )
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Untitled
Abstract: No abstract text available
Text: ESMT M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Revision 1.0 (07 Jun. 2006) - Delete Preliminary at ever page - Revise typing error of page1 (2Mx16 Î 4Mx16) Revision 1.1 (09 May. 2007) - Modify PD, DC specifications and MRS Elite Semiconductor Memory Technology Inc.
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M13S2561616A
2Mx16
4Mx16)
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esmt m13s2561616a
Abstract: M13S2561616A
Text: ESMT M13S2561616A DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )
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M13S2561616A
esmt m13s2561616a
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DDR SDRAM
Abstract: No abstract text available
Text: ESMT M13S2561616A 2A Operation Temperature Condition -40°C~85°C DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK )
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Untitled
Abstract: No abstract text available
Text: ESMT M13S2561616A 2K Operation Temperature Condition -40°C~85°C DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK )
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M13S2561616A
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M13S2561616A -5T
Abstract: CKE 2009 M13S2561616A-4TG M13S2561616A esmt m13s2561616a
Text: ESMT M13S2561616A DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )
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M13S2561616A
M13S2561616A -5T
CKE 2009
M13S2561616A-4TG
M13S2561616A
esmt m13s2561616a
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Untitled
Abstract: No abstract text available
Text: ESMT M13S2561616A 2A DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition
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DDR SDRAM
Abstract: esmt m13s2561616a
Text: ESMT M13S2561616A 2A Automotive Grade DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition
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M13S2561616A
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esmt m13s2561616a
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M13S2561616A-5TG
Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
Text: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now
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256Kb
40/44L-TSOPII
M11B416256A-25JP
M11B416256A-35TG
M11L416256SA-35JP
M11L416256SA-35TG
40L-SOJ
44-40L-TSOPII
128Mb
M13S2561616A-5TG
90-FBGA
M12L64164A-7T
M13S2561616A -5T
M11B416256A-25JP
diode 6BG
90FBGA
M12L128168A-6TG
M12L16161A
TSOPII
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Untitled
Abstract: No abstract text available
Text: ESM T M13S2561616A 2A Operation Temperature Condition -40°C~85°C DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK )
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M13S2561616A
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Untitled
Abstract: No abstract text available
Text: ESM T M13S2561616A 2A DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition
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Untitled
Abstract: No abstract text available
Text: ESM T M13S2561616A 2K DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition
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M13S2561616A
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Untitled
Abstract: No abstract text available
Text: ESM T M13S2561616A 2A Automotive Grade DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition
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Untitled
Abstract: No abstract text available
Text: ESM T M13S2561616A 2K Operation Temperature Condition -40ｔC~85ｔC DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK )
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