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    Untitled

    Abstract: No abstract text available
    Text: ESE D N AMER PHILIPS/DISCRETE bbSETEl 0QE0M70 5 • BUK454-500A BUK454-500B PowerMOS transistor ■■■■■a T"- 3 7 - U GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 0QE0M70 BUK454-500A BUK454-500B BUK454 -500A -500B

    mt4c1024dj7

    Abstract: mt4c1024dj-7
    Text: |v > ll = R O MT4C1024 L 1 MEG X 1 DRAM Í\J DRAM 1 MEG X 1 DRAM LOW POWER, EXTENDED REFRESH O 3J > FEATURES PIN ASSIGNMENT (Top View • Industry standard x l pinout, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply


    OCR Scan     		PDF MT4C1024 150mW 512-cycle 200nA 18-Pin 20-Pin 125ps MT4C1Q24L 1024L MT4C1024L mt4c1024dj7 mt4c1024dj-7