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    ERICSSON 10007 Search Results

    ERICSSON 10007 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10007607-801-36LF Amphenol Communications Solutions BergStik® 2.54mm, Board To Board Connector, Unshrouded Right Angled header ,Through Hole, Row Polarized ,Double row , 36 Positions ,2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    10007607-802-06LF Amphenol Communications Solutions BergStik® 2.54mm, Board To Board Connector, Unshrouded Right Angled header ,Through Hole, Row Polarized ,Double row , 6 Positions ,2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    10007607-401-04LF Amphenol Communications Solutions BergStik® 2.54mm, Board To Board Connector, Unshrouded Right Angled header ,Through Hole, Row Polarized ,Double row , 4 Positions ,2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    10007607-402-04LF Amphenol Communications Solutions BergStik® 2.54mm, Board To Board Connector, Unshrouded Right Angled header ,Through Hole, Row Polarized ,Double row , 4 Positions ,2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    10007607-802-36LF Amphenol Communications Solutions BergStik® 2.54mm, Board To Board Connector, Unshrouded Right Angled header ,Through Hole, Row Polarized ,Double row , 36 Positions ,2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions

    ERICSSON 10007 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cgs resistor

    Abstract: microstrip OZ 960 G200 20222
    Text: PTF 102027 40 Watts, 925–960 MHz GOLDMOS Field Effect Transistor Description The PTF 102027 is a 40–watt GOLDMOS FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53% efficiency with 15 dB of gain typical. Full gold metallization ensures


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    PDF 220QBK-ND 1-877-GOLDMOS 1522-PTF cgs resistor microstrip OZ 960 G200 20222

    10007

    Abstract: capacitor 560 pF capacitor
    Text: PTF 10007 GOLDMOS Field Effect Transistor 35 Watts, 1.0 GHz Description The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization


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    PDF Powe917-ND P5276 1-877-GOLDMOS 1522-PTF 10007 capacitor 560 pF capacitor

    F 10007

    Abstract: G200 10007
    Text: PTF 10007 GOLDMOS Field Effect Transistor 35 Watts, 1.0 GHz Description The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization


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    PDF P4917-ND P5276 1-877-GOLDMOS 1522-PTF F 10007 G200 10007

    G200

    Abstract: 10007
    Text: PTF 10007 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10007 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization


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    PDF P4917-ND P5276 1-877-GOLDMOS 1301-PTF G200 10007

    ericsson 10007

    Abstract: ca 3161 e IC
    Text: PTF 10007 GOLDMOS Field Effect Transistor 35 Watts, 1.0 GHz Description The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization


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    PDF PC56106 1-877-GOLDMOS 1522-PTF ericsson 10007 ca 3161 e IC

    G200

    Abstract: PTF 10007
    Text: PTF 10007 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold


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    PDF P5276 1-877-GOLDMOS 1522-PTF G200 PTF 10007

    TRIMMER capacitor 5-60 pF

    Abstract: G200 CDS4010 gps 9725
    Text: PTF 10052 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10052 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and full gold metallization


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    PDF 5801-PC P4917-ND P5276 1-877-GOLDMOS 1301-PTF TRIMMER capacitor 5-60 pF G200 CDS4010 gps 9725

    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


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    PTF 10049

    Abstract: No abstract text available
    Text: ERICSSON ^ 3 Contents PTF 10007 . 3-41 PTF 10009. 3-71 PTE 10015. 3-45


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    ericsson 10007

    Abstract: c 2575 gs
    Text: ERICSSON ^ PTF 10007 35 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The PTF 10007 is a com mon source n-channel enhancement-mode lateral MOSFET intended for large signal am plifier applications to 1.0 GHz. It is rated at 35 w atts minimum output power. Nitride surface


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    PDF ate-Sou05 ericsson 10007 c 2575 gs

    ericsson 10007

    Abstract: s 10007
    Text: ERICSSON í PTF 10007 35 Watts, HF -1.0 GHz LDMOS Field Effect T ra n s is to r Description The PTF 10007 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GFIz. It is rated at 35 watts minimum output power. Nitride surface


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