N27C256-200V10
Abstract: No abstract text available
Text: in t j, 27C256 256K 32K x 8 CHMOS EPROM • High Speed — 120 ns Access Time ■ Low Power Consumption — 100 juA Standby, 30 mA Active ■ Fast Programming — Quick-Pulse Programming Algorithm — Programming Time as Fast as 4 Seconds ■ EPI Processing
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27C256
28-Pin
32-Lead
27C256
144-bit
-150V
120V10,
200V10,
N27C256-200V10
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27CS12
Abstract: 27C256-200V10 27C126 27c256-200 D27c256b intel 27126 intel PLD 27C256
Text: INTEL CORP flEflORY/PLD/ 44E D 405bl7b GDVIS^ ' T 7% in ta l T • ITL2 ' ß - 2 ci 27C256 256K (32K x 8 CHMOS EPROM High Speed — 120 ns Access Time Low Power Consumption — 100 /xA Standby, 30 mA Active Fast Programming — Quick-Pulse Programming
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405bl7b
27C256
28-Pin
32-Lead
144-bit
27C256
OD71t
T-46-13-29
27CS12
27C256-200V10
27C126
27c256-200
D27c256b
intel 27126
intel PLD
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Untitled
Abstract: No abstract text available
Text: $ 27C256 M ic r o c h ip 256K 32K x 8 CMOS EPROM PACKAGE TYPE FEATURES TSOP • High speed performance .2 8 / ' 27 / 26 25 24 23 22 - 90 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 nA Standby current
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27C256
28-pin
32-pin
S11001K-page
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Untitled
Abstract: No abstract text available
Text: z/czso: inursaay. May i s issm Revision: August 19,1994 CY27C256 W CYPRESS Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected
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CY27C256
CY27C256
768-word
600-mil
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1SHB
Abstract: 27C256 AMD 27C256 27C256 amd
Text: Advanced Micro Devices Am27C256 256 Kilobit 32,768 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to ■ Fast access time Vcc + 1 V — 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing
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Am27C256
28-pin
32-pin
27C256
256K-bit
Am33C93A
1SHB
AMD 27C256
27C256 amd
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Untitled
Abstract: No abstract text available
Text: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PACKAGE TYPE TSOP • High speed performance - 90 ns access tim e available • CMOS Technology for low pow er consumption - 20 mA Active current - 100 nA S tandby current • Factory program m ing available
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27C256
28-pin
027C256
27C256
27C2S6
DS11001J-page
bl03201
8x20mm
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AMD 27C256 255
Abstract: EPROM am27c256 120 AM27C256 AMD 27C256
Text: Advanced Micro Devices Am27C256 256 Kilobit 32,768 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc + 1 V ■ Fast access time — 55 ns ■ High noise immunity ■ Low power consumption — 20 jiA typical CM OS standby current
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Am27C256
28-pin
32-pin
27C256
256K-bit
KS000010
AMD 27C256 255
EPROM am27c256 120
AMD 27C256
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Untitled
Abstract: No abstract text available
Text: 27C256 M i c r o c h ip 256K 32K x 8 CMOS EPROM FEATURES P A C K A G E TYPE • High speed performance - 90 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 nA Standby current • Factory programming available
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27C256
28-pin
32-pin
DS11001
27C256
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Untitled
Abstract: No abstract text available
Text: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PIN CONFIGURATION • High speed performance — 90 ns access time available • CMOS Technology for low power consumption — 20 mA Active current — 100 nA Standby current • Factory programming available
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27C256
28-pin
32-pin
bl032Dl
DS11001J-7
27C256
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eprom 27c256 28 PIN DIP 120 NS
Abstract: No abstract text available
Text: TM NM27C256 262,144-Bit 32K x 8 High Performance CMOS EPROM General Description The NM 27C256 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C256 is a 256K Electrically Program mable Read Only Memory. It is m anufactured in Fairchild’s latest CM OS split gate
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NM27C256
144-Bit
27C256
eprom 27c256 28 PIN DIP 120 NS
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Untitled
Abstract: No abstract text available
Text: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PIN CONFIGURATION • High speed performance — 90 ns access time available • CMOS Technology for low power consumption — 20 mA Active current — 100 (iA Standby current • Factory programming available
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27C256
28-pin
32-pin
DS11001J-7
27C256
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27c256-15
Abstract: 27C256-20
Text: Philips Components-Signetics 27C256 Document No. 8 5 3 -0 0 94 ECN No. 0 10 4 0 Date of Issue N ove m b e r 1 2 ,1 9 9 0 Status Pro du ct S p ecification 256K-bit CMOS EPROM 32K x 8 M e m ory P ro du cts PIN CONFIGURATION DESCRIPTION FEATURES Philips C o m p o n e n ts -S ig n e tic s 27C 256
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27C256
256K-bit
27c256-15
27C256-20
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27C256
Abstract: eprom 27c256 28 PIN DIP 150 NS 27C256-12 signetics eprom 27c256 28 PIN DIP 150 NS j package signetics 27C256 27c256 signetics eprom 27c256 28 PIN DIP 120 NS 27C256DC ti 27c256 27C256-12
Text: Philips Components-Signetics 27C256 Document No. 8 53 -0 0 94 ECN No. 01040 Date of Issue Novem ber 12, 1990 Status Product Specification 256K-bit CMOS EPROM 32K x 8 Memory Products PIN CONFIGURATION DESCRIPTION FEATURES Philips Com ponents-Signetics 2 7C 256
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27C256
256K-bit
144-bit
eprom 27c256 28 PIN DIP 150 NS
27C256-12 signetics
eprom 27c256 28 PIN DIP 150 NS j package
signetics 27C256
27c256 signetics
eprom 27c256 28 PIN DIP 120 NS
27C256DC
ti 27c256
27C256-12
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Untitled
Abstract: No abstract text available
Text: GENERAL INSTRUMENT 27C256 PRELIMINARY INFORMATION 256K 32K x 8 CMOS UV Erasable PROM FEATURES PIN CONFIGURATIONS Top View V p p E •1 A 12C 2 28 □ VDD 27 □ A14 A7tZ 3 26 H A13 A6 C 4 25 □ A8 A5C 5 24 □ A9 A4 d The 27C256 is available in an extensive selection of
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27C256
150ns
Extend373;
DS11001B-12
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27C256 wsi
Abstract: 27C256F
Text: DE | TSBTbTG 0000214 G | T-U-Q-Z^ WAFER SCALE INTEGRATION WS27C256L ADVANCE INFORMATION WAFERSCAIÆ INTEGRATION, INC. 32K 8 CMOS EPROM X KEY FEATURES • 300 Mil Dip or Standard 600 Mil Dip Fast Access Time — 90 ns • EPI Processing Low Power Consumption
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WS27C256L
27C256
WS27C256L
WS27C256L-12S
WS27C256L-12T
WS27C256L-12TMB
MIL-STD-883C
27C256 wsi
27C256F
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Untitled
Abstract: No abstract text available
Text: & 27C256 Microchip 256K 32K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C256 is a CMOS 256K bit (electrically) P rogramm able Read Only Memory. The — 90ns access time available device is organized as 32K words by 8 bits (32K bytes).
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27C256
27C256
DS110011-page
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CY27C256
Abstract: No abstract text available
Text: fax id: 3013 p yXpX : v « *1 CY27C256 - 32K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light,
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CY27C256
CY27C256
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Untitled
Abstract: No abstract text available
Text: MICROCHIP TECHNOLOGY INC ESE D blü3201 0DG47Ô1 4 • <3.-251 27C256 Microchip 256K 32K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance —150ns maximum access time. • CMOS Technoiogy for low power consumption —20mA Active current
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0DG47Ã
27C256
150ns
100nA
-28-pin
-32-pln
S11001D-7
L103SQ1
0DD47afl
27C256
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Untitled
Abstract: No abstract text available
Text: 27C256 M icrochip 256K 32K x 8 CMOS EPROM FEATURES DESCRIPTION High speed performance The Microchip Technology Inc 27C256 is a CMOS 256K — 90ns maximum access time bit (electrically) Programm able Read Only Memory. The CMOS Technology for low power consumption
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27C256
27C256
100nA
DS11001H-8
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TS27C256-25CQ
Abstract: 27C256 DIP-28 TS27C256 TS27C256Q
Text: . • 7523B37 D D 2 7 M 0 6 =1 ■ I * 4 ^ 3 -Z°\ - SCS-THOMSON R f l D » i [ L i O ,M S_6 a ( g i _ S-THOMSON 30E T S 2 7 C 2 5 6 Q D 256K (32K x 8 CMOS UV ERASABLE PROM ■ FAST ACCESS TIME: 150ns, 170ns, 200ns, 250ns, 300ns.
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7ciEc1237
DDE74DÃ
150ns,
170ns,
200ns,
250ns,
300ns.
28-PIN
DIP-28
TS27C256
TS27C256-25CQ
27C256
DIP-28
TS27C256Q
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M27G512
Abstract: 27G512
Text: January 1998 S E M IC O N D U C T O R FM27C512-L 524,288-Bit 64K x 8 Low Power Fast EPROM General Description The FM27C512 is a low-power 512Kbit, 5V-only one-timeprogrammable (OTP) read-only memory (EPROM), orga nized into 64K words with 8 bits per word. Any byte can be
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FM27C512-L
288-Bit
FM27C512
512Kbit,
256Kb
M27G512
27G512
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Untitled
Abstract: No abstract text available
Text: FINAL AMDZ1 Am27C256 256 Kilobit 32 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High noise immunity — Speed options as fast as 45 ns ■ Low power consumption ■ Versatile features for simple interfacing
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Am27C256
28-pin
32-pin
27C256
256ing
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D87C257
Abstract: intel 87c257 87C84 N87C257-200V10 87C257 memory 1357 intel 1357 intel 290135 intel Automotive l87c257
Text: INTEL CORP MEMORY/LOGIC 20 E D 4â2bl7b OObb?öl 7 I IPWIiLOMOAOnf I Intel 8 7 C 2 57 2 5 6 K (3 2 K x 8 T ^ é -ìZ - Z ^ ) C H M O S U V E R A S A B L E • CHMOS/NMOS Microcontroller and Microprocessor Compatible — 87C257-lntegrated Address Latch
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87C257-lntegrated
28-Pin
32-Lead
87C257
256K-bit
87C257
T-46-13-29
D87C257
intel 87c257
87C84
N87C257-200V10
memory 1357 intel
1357 intel
290135
intel Automotive
l87c257
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intel 27010 eprom
Abstract: No abstract text available
Text: INTEL CORP Intel* MEMORY/LOGIC 50E D • 4fiS bl7b O O b t Ja M l4 5 ■ /3 -2 9 27010 1M (128K x 8) BYTE-WIDE EPROM ■ Compatible with 28-Pin JEDEC EPROMs: 27256, 27512 ■ Complete Upgrade Capability — PGM “Don’t Care” Status Allows Wiring in Higher Order Addresses
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28-Pin
intel 27010 eprom
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