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Abstract: No abstract text available
Text: ELPAQ A dív¡»lon EMS512K8A of ELMO Semiconductor Corp._ 35 mSSnS 4Mb CMOS STATIC SRAM FEATURES Pin Configuration Pin Description • High density SRAM module A18 C t A ie C 3 AM C • Al# C 4 « c • fs c 1 AS C T
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EMS512K8A
325mW
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Untitled
Abstract: No abstract text available
Text: ELPAQ EMS512K8A 35 - 55ns A division of ELMO Semiconductor Corp. 4Mb CMOS STATIC SRAM FEATURES * • • ■ High density SRAM module Organized as 524,288 x 8 Access time 35 - 55ns Low power consumption Standby: 15mW typ. Operating: 325mW(typ.) ■ ■ ■
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EMS512K8A
325mW
555QOOQOQ
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Untitled
Abstract: No abstract text available
Text: S5E D • TDDDSñD OGOQOañ 4Sñ ■ ELPÖ ELPAQ ELPAö EMS512K8A A division o f ELMO Semiconductor Corp. 35 4Mb CMOS STATIC SRAM FEATURES Pin Configuration ■ High density SRAM module Aia c 1 32 □ vcc • Organized as 524,288 x 8 A 16 C 2 31 3 A15 A 14 C
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EMS512K8A
325mW
77////77T
D00DD3S
-55ns
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Untitled
Abstract: No abstract text available
Text: ELPAQ EMS512K8A A division of ELMO Semiconductor Corp. 3 5 - 5 5 ns_ 4Mb CMOS STATIC SRAM FEATURES Pin Configuration * High density SRAM module A 18 • Organized as 524,288 x 8 ■ Access time 35 - 55ns ■ Low power consumption Standby: 15mW typ. Operating: 325mW(typ.)
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EMS512K8A
325mW
55flS
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Abstract: No abstract text available
Text: NAPC/ SIGNETICS MIE D ES GGblE3fl 5 H S I C 3 Philips Components Preliminary specification 8-bit high-speed analog-to-digital converter TDA8713 T -5 1 -7 0 -0 8 SYMBOL | PARAMETER Reference voltages for the resistor ladder Vrb V rt Vref Iref Rlad Rtlc VoB
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TDA8713
EMS512K8A
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