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    ELM36 Search Results

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    ELM36 Price and Stock

    Bivar Inc ELM-3-600

    LED HOLDER T1 3/4 PVC BLACK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ELM-3-600 Bag 695 1
    • 1 $0.37
    • 10 $0.208
    • 100 $0.37
    • 1000 $0.08938
    • 10000 $0.06875
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    Bivar Inc ELM-3-670

    LED HOLDER T1 3/4 PVC BLACK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ELM-3-670 Bag 1,000
    • 1 -
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    • 100 -
    • 1000 $0.08938
    • 10000 $0.08938
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    Bivar Inc ELM-3-695

    LED HOLDER T1 3/4 PVC BLACK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ELM-3-695 Bag 1,000
    • 1 -
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    • 100 -
    • 1000 $0.08938
    • 10000 $0.08938
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    Bivar Inc ELM-3-675

    LED HOLDER T1 3/4 PVC BLACK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ELM-3-675 Bag 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.08938
    • 10000 $0.08938
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    Bivar Inc ELM-3-640

    LED HOLDER T1 3/4 PVC BLACK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ELM-3-640 Bag 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.08938
    • 10000 $0.08938
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    Find more ELM36 price and stock on Findchips.com

    ELM36 Datasheets (57)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ELM 3-600 Bivar Optoelectronics - LEDs - Spacers, Standoffs - LED MT SR VERT X 0.600" 5MM 3LD Original PDF
    ELM3-600 Bivar LEDs - Spacers, Standoffs, Optoelectronics, LED MT SR VERT X 0.600" 5MM 3LD Original PDF
    ELM 3-605 Bivar Optoelectronics - LEDs - Spacers, Standoffs - LED MT SR VERT X 0.605" 5MM 3LD Original PDF
    ELM3-605 Bivar LEDs - Spacers, Standoffs, Optoelectronics, LED MT SR VERT X 0.605" 5MM 3LD Original PDF
    ELM 3-610 Bivar Optoelectronics - LEDs - Spacers, Standoffs - LED MT SR VERT X 0.610" 5MM 3LD Original PDF
    ELM3-610 Bivar LEDs - Spacers, Standoffs, Optoelectronics, LED MT SR VERT X 0.610" 5MM 3LD Original PDF
    ELM 3-615 Bivar Optoelectronics - LEDs - Spacers, Standoffs - LED MT SR VERT X 0.615" 5MM 3LD Original PDF
    ELM3-615 Bivar LEDs - Spacers, Standoffs, Optoelectronics, LED MT SR VERT X 0.615" 5MM 3LD Original PDF
    ELM 3-620 Bivar Optoelectronics - LEDs - Spacers, Standoffs - LED MT SR VERT X 0.620" 5MM 3LD Original PDF
    ELM3-620 Bivar LEDs - Spacers, Standoffs, Optoelectronics, LED MT SR VERT X 0.620" 5MM 3LD Original PDF
    ELM 3-625 Bivar Optoelectronics - LEDs - Spacers, Standoffs - LED MT SR VERT X 0.625" 5MM 3LD Original PDF
    ELM3-625 Bivar LEDs - Spacers, Standoffs, Optoelectronics, LED MT SR VERT X 0.625" 5MM 3LD Original PDF
    ELM36255BC Bivar LEDs - Circuit Board Indicators, Arrays, Light Bars, Bar Graphs, Optoelectronics, LED ASSY VERT 5MM HER/GN 635/568 Original PDF
    ELM36255RD Bivar LEDs - Circuit Board Indicators, Arrays, Light Bars, Bar Graphs, Optoelectronics, LED ASSY VERT 5MM RED 655NM Original PDF
    ELM 3-630 Bivar Optoelectronics - LEDs - Spacers, Standoffs - LED MT SR VERT X 0.630" 5MM 3LD Original PDF
    ELM3-630 Bivar LEDs - Spacers, Standoffs, Optoelectronics, LED MT SR VERT X 0.630" 5MM 3LD Original PDF
    ELM36305GD Bivar LEDs - Circuit Board Indicators, Arrays, Light Bars, Bar Graphs, Optoelectronics, LED ASSY VERT 5MM GRN 565NM Original PDF
    ELM36305GDL Bivar LEDs - Circuit Board Indicators, Arrays, Light Bars, Bar Graphs, Optoelectronics, LED ASSY VERT 5MM GRN 565NM Original PDF
    ELM36305HD Bivar LED ASSEMBLY VERTICAL Original PDF
    ELM36305HDL Bivar LEDs - Circuit Board Indicators, Arrays, Light Bars, Bar Graphs, Optoelectronics, LED ASSY VERT 5MM HER 635NM Original PDF

    ELM36 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ELM36405EA

    Abstract: No abstract text available
    Text: 单 P 沟道 MOSFET ELM36405EA-S •概要 ■特点 ELM36405EA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-20V ·Id=-5A ·Rds on < 44mΩ (Vgs=-4.5V) ·Rds(on) < 70mΩ (Vgs=-2.5V) ·Rds(on) < 100mΩ (Vgs=-1.8V)


    Original     		ELM36405EA-S Aug-03-2006 ELM36405EA PDF

    Untitled

    Abstract: No abstract text available
    Text: シングル N チャンネル MOSFET ELM36402EA-S •概要 ■特長 ELM36402EA-S は低入力容量 低電圧駆動、 低 ・ Vds=20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=6.5A ・ Rds on < 24mΩ (Vgs=4.5V) ・ Rds(on) < 35mΩ (Vgs=2.5V)


    Original     		ELM36402EA-S 100ms NOV-01-2005 PDF

    ELM36400EA

    Abstract: No abstract text available
    Text: 单 N 沟道 MOSFET ELM36400EA-S •概要 ■特点 ELM36400EA-S 是 N 沟道低输入电容，低工作电压， •Vds=30V 低导通电阻的大电流 MOSFET。 ·Id=7A ·Rds on < 27mΩ (Vgs=10V) ·Rds(on) < 40mΩ (Vgs=4.5V) ■绝对最大额定值 项目


    Original     		ELM36400EA-S AUG-12-2005 P2703BAG ELM36400EA PDF

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM36403EA-S •General description ■Features ELM36403EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-5A Rds(on) < 51mΩ (Vgs=-10V) Rds(on) < 85mΩ (Vgs=-4.5V)


    Original     		ELM36403EA-S ELM36403EA-S P5103EAG May-18-2006 PDF

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM36402EA-S •General description ■Features ELM36402EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=20V Id=6.5A Rds(on) < 24mΩ (Vgs=4.5V) Rds(on) < 35mΩ (Vgs=2.5V)


    Original     		ELM36402EA-S ELM36402EA-S 100ms NOV-01-2005 PDF

    Untitled

    Abstract: No abstract text available
    Text: Dual N-channel MOSFET ELM36802EA-S •General description ■Features ELM36802EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=30V Id=3.5A Rds(on) < 60mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V)


    Original     		ELM36802EA-S ELM36802EA-S DEC-29-2005 PDF

    Untitled

    Abstract: No abstract text available
    Text: Dual N-channel MOSFET ELM36800EA-S •General description ■Features ELM36800EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=3.5A Rds(on) < 68mΩ (Vgs=10V) Rds(on) < 98mΩ (Vgs=4.5V)


    Original     		ELM36800EA-S ELM36800EA-S P6803HAG OCT-12-2005 PDF

    ELM36402EA

    Abstract: No abstract text available
    Text: 单 N 沟道 MOSFET ELM36402EA-S •概要 ■特点 ELM36402EA-S 是 N 沟道低输入电容，低工作电压， •Vds=20V 低导通电阻的大电流 MOSFET。 ·Id=6.5A ·Rds on < 24mΩ (Vgs=4.5V) ·Rds(on) < 35mΩ (Vgs=2.5V) ■绝对最大额定值


    Original     		ELM36402EA-S 100ms NOV-01-2005 ELM36402EA PDF

    Untitled

    Abstract: No abstract text available
    Text: デュアルパワー N チャンネル MOSFET ELM36800EA-S •概要 ■特長 ELM36800EA-S は低入力容量 低電圧駆動、 低 オン抵抗という特性を備えた大電流デュアルパワー ・ Vds=30V ・ Id=3.5A MOSFET です。 ・ Rds on < 68mΩ (Vgs=10V)


    Original     		ELM36800EA-S OCT-12-2005 PDF

    Untitled

    Abstract: No abstract text available
    Text: シングル N チャンネル MOSFET ELM36400EA-S •概要 ■特長 ELM36400EA-S は低入力容量 低電圧駆動、 低 ・ Vds=30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=7A ・ Rds on < 27mΩ (Vgs=10V) ・ Rds(on) < 40mΩ (Vgs=4.5V)


    Original     		ELM36400EA-S AUG-12-2005 P2703BAG PDF

    ELM36800EA

    Abstract: No abstract text available
    Text: 双 N 沟道 MOSFET ELM36800EA-S •概要 ■特点 ELM36800EA-S 是 N 沟道低输入电容低工作电压、 •Vds=30V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=3.5A ·Rds on < 68mΩ (Vgs=10V) ·Rds(on) < 98mΩ (Vgs=4.5V) ■绝对最大额定值


    Original     		ELM36800EA-S OCT-12-2005 ELM36800EA PDF

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM36401EA-S •General description ■Features ELM36401EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=-20V Id=-3A Rds(on) < 85mΩ (Vgs=-10V) Rds(on) < 118mΩ (Vgs=-4.5V)


    Original     		ELM36401EA-S ELM36401EA-S ModeELM36401EA-S PA102FAG Mar-28-2006 PDF

    Untitled

    Abstract: No abstract text available
    Text: シングル P チャンネル MOSFET ELM36405EA-S •概要 ■特長 ELM36405EA-S は低入力容量 低電圧駆動、 低 ・ Vds=-20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-5A ・ Rds on < 44mΩ (Vgs=-4.5V) ・ Rds(on) < 70mΩ (Vgs=-2.5V)


    Original     		ELM36405EA-S Aug-03-2006 PDF

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM36405EA-S •General description ■Features ELM36405EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=-20V Id=-5A Rds(on) < 44mΩ (Vgs=-4.5V) Rds(on) < 70mΩ (Vgs=-2.5V)


    Original     		ELM36405EA-S ELM36405EA-S Aug-03-2006 PDF

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM36400EA-S •General description ■Features ELM36400EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=7A Rds(on) < 27mΩ (Vgs=10V) Rds(on) < 40mΩ (Vgs=4.5V)


    Original     		ELM36400EA-S ELM36400EA-S AUG-12-2005 P2703BAG PDF

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM36402EA-S •General description ■Features ELM36402EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=20V Id=6.5A Rds(on) < 24mΩ (Vgs=4.5V) Rds(on) < 35mΩ (Vgs=2.5V)


    Original     		ELM36402EA-S ELM36402EA-S 100ms NOV-01-2005 PDF

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM36400EA-S •General description ■Features ELM36400EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=7A Rds(on) < 27mΩ (Vgs=10V) Rds(on) < 40mΩ (Vgs=4.5V)


    Original     		ELM36400EA-S ELM36400EA-S AUG-12-2005 P2703BAG PDF

    Untitled

    Abstract: No abstract text available
    Text: Dual N-channel MOSFET ELM36800EA-S •General description ■Features ELM36800EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=3.5A Rds(on) < 68mΩ (Vgs=10V) Rds(on) < 98mΩ (Vgs=4.5V)


    Original     		ELM36800EA-S ELM36800EA-S P6803HAG OCT-12-2005 PDF

    ELM36403EA

    Abstract: No abstract text available
    Text: 单 P 沟道 MOSFET ELM36403EA-S •概要 ■特点 ELM36403EA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-30V ·Id=-5A ·Rds on < 51mΩ (Vgs=-10V) ·Rds(on) < 85mΩ (Vgs=-4.5V) ■绝对最大额定值


    Original     		ELM36403EA-S May-18-2006 P5103EAG ELM36403EA PDF

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM36405EA-S •General description ■Features ELM36405EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=-20V Id=-5A Rds(on) < 44mΩ (Vgs=-4.5V) Rds(on) < 70mΩ (Vgs=-2.5V)


    Original     		ELM36405EA-S ELM36405EA-S Aug-03-2006 PDF

    Untitled

    Abstract: No abstract text available
    Text: シングル P チャンネル MOSFET ELM36403EA-S •概要 ■特長 ELM36403EA-S は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-5A ・ Rds on < 51mΩ (Vgs=-10V) ・ Rds(on) < 85mΩ (Vgs=-4.5V)


    Original     		ELM36403EA-S P5103EAG May-18-2006 PDF

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM36601EA-S •General Description ■Features ELM36601EA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=3.5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 88mΩ(Vgs=4.5V)


    Original     		ELM36601EA-S ELM36601EA-S P5803NAG APR-03-2006 PDF

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM36407EA-S •General description ■Features ELM36407EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=-20V Id=-4.2A Rds(on) < 51mΩ (Vgs=-4.5V) Rds(on) < 61mΩ (Vgs=-2.5V)


    Original     		ELM36407EA-S ELM36407EA-S PDF

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM36403EA-S •General description ■Features ELM36403EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-5A Rds(on) < 51mΩ (Vgs=-10V) Rds(on) < 85mΩ (Vgs=-4.5V)


    Original     		ELM36403EA-S ELM36403EA-S P5103EAG May-18-2006 PDF