TC58NVG1S3ETA00
Abstract: TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111
Text: TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.
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TC58NVG1S3ETA00
TC58NVG1S3E
2048blocks.
2112-byte
2010-01-25C
TC58NVG1S3ETA00
TC58NVG1S3ET
TC58NVG1S3
TC58NVG1S3ETA
DIN2111
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ASTM D374
Abstract: ASTM D2240, D412 ASTM D412 ASTM d412 ASTM D2240 D2240 ASTM d792 ASTM-D-257 ASTM-D-374
Text: TG2030 Ultra Soft Thermal Conductive Pad Features Superior thermal conductivity Highly compressible Naturally tacky Low Shore OO hardness Low oil bleed Electrically insulating Applications Electronic components: IC - CPU - MOS LED - M/B - P/S - Heat Sink LCD-TV - Notebook PC - PC Telecom Device - Wireless Hub.etc.
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TG2030
D5470
D2240
ASTM D374
ASTM D2240, D412
ASTM D412
ASTM
d412
ASTM D2240
D2240
ASTM d792
ASTM-D-257
ASTM-D-374
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Untitled
Abstract: No abstract text available
Text: TC9WMA1FK TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic TC9WMA1FK 1,024-Bit 128 x 8 Bit Serial EEPROM The TC9WMA1FK is electrically erasable/programmable nonvolatile memory (EEPROM). Features • Serial data input/output • Programmable in units of one word and collectively erasable
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024-Bit
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smd JSs diode
Abstract: smd JSs smd JSs 75 marking JSs BAW100 smd JS smd JSs 85 smd JS p
Text: Diodes SMD Type Silicon Switching Diode Array BAW100 Unit: mm Features For high-speed switching Electrically insulated diodes A b s o lu t e M a x im u m R a t in g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it VR 75 V R e v e r s e v o lt a g e P e a k r e v e r s e v o lt a g e
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BAW100
smd JSs diode
smd JSs
smd JSs 75
marking JSs
BAW100
smd JS
smd JSs 85
smd JS p
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IRFP250
Abstract: No abstract text available
Text: PD-20380B HFA45HI60C Ultrafast, Soft Recovery Diode FRED Features • • • • • • Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets VR = 600V VF = 1.7V Qrr = 375nC
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PD-20380B
HFA45HI60C
375nC
O-259AA
IRFP250
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KMC-125
Abstract: kMc Series TAH20PR050J
Text: The TAH20 is a completely encapsulated thick film resistor in the TO220 package outline. Rated for 20 watts @ 25°C case temperature, these resistors are electrically isolated, and molded in a high temperature case. Designed for heat sink mounting, the symmetrical
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TAH20
10H20P510RJE
TAH20P51R0JE
TAH20P5K10JE
TAH20P5R10JE
TAH20P750RJE
TAH20P75R0JE
TAH20P7K50JE
TAH20P7R50JE
KMC-125
kMc Series
TAH20PR050J
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RW-3009
Abstract: versafit RW-3009 TYCO RW3009 raychem heat shrink LR-31929 AMS-DTL-23053 316F E35586
Text: Versafit Highly flame-retardant, low recovery temperature, heat-shrinkable tubing Electrically insulates and protects in-line components, disconnect terminals, and splices. • Bundles wires for very flexible light-duty harnesses. ■ Identifies or color-codes wires,
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Untitled
Abstract: No abstract text available
Text: ASMT-Jx3x 3W Mini Power LED Light Source Data Sheet Description Features The 3W Mini Power LED Light Source is a high performance energy efficient device which can handle high thermal and high driving current. Option with electrically isolated metal slug is also available.
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AV02-1941EN
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3045CTP
Abstract: 3045CT
Text: MBR3045CTP NEW PRODUCT 30A SCHOTTKY BARRIER RECTIFIER Features Mechanical Data • • • • • • • Low Forward Voltage Drop Soft, Fast Switching Capability Schottky Barrier Chip ITO-220S Heat Sink Tab Electrically Isolated from Cathode UL Approval in Accordance with UL 1557, Reference No.
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MBR3045CTP
ITO-220S
E94661
MIL-STD-202,
ITO-220S
DS31796
621-MBR3045CTP
3045CTP
3045CT
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MIL-R-5757
Abstract: MS27247-1 MS27245 27245 MS27247
Text: CII Low Signal Relays Double Pole, Electrically Held, 10 Amps and Less Product Facts • Hermetically sealed ■ Up to 10 amps switching ■ ■ ■ High shock & vibration ratings Optional terminals & mounting styles DC, AC & diode-suppressed coils Electrical Characteristics
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MIL-R-5757/23
MIL-R-5757
MS27247-1
MS27245
27245
MS27247
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AC-DC Converters
Abstract: RESISTOR VDR
Text: X Series Data Sheet 375 and 500 Watt AC-DC Converters Input range 85 to 264 VAC with PFC 1 or 2 isolated, regulated outputs up to 96 V Class I equipment Features • RoHS lead-solder-exempt compliant • Electrically and mechanically rugged DIN-rail front end
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LXR1601-6
LXN1601-6
AC-DC Converters
RESISTOR VDR
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Untitled
Abstract: No abstract text available
Text: TMS28C64 65,536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY • Organization 8K x 8 • Single 5-V Power Supply ± 10% N AND J PACKAGES (TOP VIEW } Q 1 U A 12C 2 A7C 3 Compatible with Existing 64K M O S EPRO M s. PRO M s. R O M s, and EEPR O M s
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TMS28C64
536-BIT
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2N3051
Abstract: 2N3050 2N2412 2n3049
Text: TYPES 2N3049, 2N3050, 2N3051 DUAL P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 7 4 2 3 0 , A U G U S T 1 9 6 3 - R E V I S E D A P H IL 1 96 7 DESIGNED FOR DIFFERENTIAL AMPLIFIERS, LOW-NOISE AMPLIFIERS, AND LOW-LEVEL SWITCHING • Each Triode Electrically Similar to 2N2411 and 2N2412 Transistors
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2N3049,
2N3050,
2N3051
2N2411
2N2412
2N3050
2n3049
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC58V64FT/DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.
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TC58V64FT/DC
64-MBIT
TC58V64FT/DC
016-bit)
528-byte
44/40-P-400-0
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TC57256AD
Abstract: No abstract text available
Text: TOSHIBA TC57256AD-12 TC57256AD-120 TC57256AD-150 SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY Description The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It
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TC57256AD-12
TC57256AD-120
TC57256AD-150
TC57256AD
30mA/8
TC57256AD.
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2N2389
Abstract: 2N2390 2N1711 Texas Instruments TI424
Text: TYPES 2N2389, 2N2390 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 4 6 0 2 7 , O C T O B E R 1 9 6 4 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS FROM <0.1 ma to >150 mo, dc to 30 Me Formerly TI424 and TI425 * Electrically Similar to 2N1613 and 2N1711
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2N2389,
2N2390
TI424
TI425
2N1613
2N1711
2N2389
2N1711 Texas Instruments
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Untitled
Abstract: No abstract text available
Text: TMS28F040 4 194 304-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS040-DECEMBER 1992 N PACKAGET Organization . . . 512K x 8 Separately Erasable 32K Byte Blocks Two Power Supplies 5 V and 12 V 100% TTL-Level Control Inputs Fully Automated On-Chip Erase and Byte
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TMS28F040
304-BIT
SMJS040-DECEMBER
A0-A18
32-pin
40-pin
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tc58v32ft
Abstract: TC58V32
Text: IN TEG RA TED CIRCUIT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58V32 FT TO SHIBA TECHNICAL DATA SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58V32FT device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and
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TC58V32
TC58V32FT
528-byte,
528-byte
TC58V32FT--
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TC5716200D-150
Abstract: 5716200D
Text: TOSHIBA TC5716200D-150, -200 SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY D escription T heT C 5716200D is a 16,777,216 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It is
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TC5716200D-150,
5716200D
TC5716200D
42-pin
150ns/200ns
60rrvV6
5716200D
TC5716200D.
TC5716200D-150
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory
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TC58A040
256-bit
TC58A040F--29
OP28-P-450
TC58A040F--
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Untitled
Abstract: No abstract text available
Text: T O S H IB A TENTATIVE TC58V32DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 M BIT 4 M x 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V32DC device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.
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TC58V32DC
TC58V32DC
528-byte,
528-byte
C-22A
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M68HC11 reference manual
Abstract: Motorola 52 pin PLCC EEPROM MCU MC68HC11E9 52 PIN PLCC MOTOROLA
Text: Order th is document by BR775/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC68HC711E9 Technical Summary 8-Bit Microcontroller Introduction The MC68HC711E9 high-performance microcontroller MCU is an electrically programmable ROM (EPROM)-based version of the MC68HC11E9 and includes similar features — 12K bytes of
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BR775/D
MC68HC711E9
MC68HC711E9
MC68HC11E9
MC68HC711E9,
M68HC11
MC68HC11l
52-Pin
M68HC11 reference manual
Motorola 52 pin PLCC
EEPROM MCU MC68HC11E9
52 PIN PLCC MOTOROLA
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aoo8
Abstract: smd ic lv 1116 ao65 Tolerance limit for basic dimensions in ansi y14
Text: < Military 10H518 M O T O R O LA Dual 2-Wide 3-Input “OR-AND” Gate ELECTRICALLY TESTED PER: 5962-8755901 The 10H518 is a basic logic building block providing the OR/AND function, use ful in data control and digital multiplexing applications. This M ECL 10H part is a functional/pinout duplication of the standard M ECL
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10H518
10H518
10K-Compatible
10H518/BXAJC
aoo8
smd ic lv 1116
ao65
Tolerance limit for basic dimensions in ansi y14
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Untitled
Abstract: No abstract text available
Text: BDT65F; BDT65AF BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbE 7110flSb 00435^0 4Sci M P H I N T ~ 33 SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.
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BDT65F;
BDT65AF
BDT65BF;
BDT65CF
7110flSb
BDT65F
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