Untitled
Abstract: No abstract text available
Text: ESAD25 C,N,D (15A) (200V to 400V / 15A) Outline drawings, mm FAST RECOVERY DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 1.6 14.5 ±0.2 1 3.0±0.2 15±0.2 1.1 0.5 1.5 5.45 5.45 JEDEC EIAJ Features High voltage by mesa design
|
Original
|
PDF
|
ESAD25
SC-65
ESAD25C
ESAD25-
et-02
|
Hitachi DSA002748
Abstract: No abstract text available
Text: HRC0103A Silicon Schottky Barrier Diode for Rectifying ADE-208-624 Z Rev 0 May. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information
|
Original
|
PDF
|
HRC0103A
ADE-208-624
HRC0103A
10msec
D-85622
Hitachi DSA002748
|
Hitachi DSA0045
Abstract: HRW0702A SC-59A
Text: HRW0702A Silicon Schottky Barrier Diode for Rectifying ADE-208-109E Z Rev 5 Oct. 1997 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.
|
Original
|
PDF
|
HRW0702A
ADE-208-109E
Hitachi DSA0045
HRW0702A
SC-59A
|
Hitachi DSA002748
Abstract: No abstract text available
Text: HRW0202A Silicon Schottky Barrier Diode for Rectifying ADE-208-209E Z Rev 5 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.
|
Original
|
PDF
|
HRW0202A
ADE-208-209E
HRW0202A
Hitachi DSA002748
|
Hitachi DSA001653
Abstract: No abstract text available
Text: HRC0202A Silicon Schottky Barrier Diode for Rectifying ADE-208-210E Z Rev 5 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • CMPAK Package is suitable for high density surface mounting and high speed assembly.
|
Original
|
PDF
|
HRC0202A
ADE-208-210E
Hitachi DSA001653
|
hitachi S17
Abstract: HRW0202A SC-59A DSA003641
Text: HRW0202A Silicon Schottky Barrier Diode for Rectifying ADE-208-209E Z Rev. 5 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.
|
Original
|
PDF
|
HRW0202A
ADE-208-209E
hitachi S17
HRW0202A
SC-59A
DSA003641
|
HRF32
Abstract: Hitachi DSA00358 Hitachi DSA0035
Text: HRF32 Silicon Schottky Barrier Diode for Rectifying ADE-208-164D Z Rev 4 Jul. 1997 Features • • Good for high-frequency rectify. LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF32 32 LRP Outline 1 32
|
Original
|
PDF
|
HRF32
ADE-208-164D
HRF32
Hitachi DSA00358
Hitachi DSA0035
|
a473
Abstract: MA020 A-473 ESAC87-009 SC-65 esac87 CC180
Text: ESAC87-009H6A i Outline Drawings SC H O TTKY B A R R IE R DIODE ^3.2±o ' 15 . 5 maj i 5iC * 13.0 , JU / r" H S f- -2.0 ! T.Zto 1 ' m CD GÌ) 0.5- ' Features JEDEC • te V F EIAJ Low VF SC-65 • x -r Super high speed sw itch in g . • R tt Connection Diagram
|
OCR Scan
|
PDF
|
ESAC87-009I16A)
SC-65
500ns,
ESAC87-009
a473
MA020
A-473
SC-65
esac87
CC180
|
Schottky Diode SC-62
Abstract: SE069
Text: COLLMER SEMICONPUCTOR INC MAE J> 52307^2 S E 0 6 9 o.95A 0QD1754 5fll • C O L _ ^ P 0 3 >- 1 I Outline Drawings SCHO TTKY BA RRIER DIODE 16 MAX. r 0.44 MAX. ■ Features • Surface mount device • Low V F • Super high speed switching.
|
OCR Scan
|
PDF
|
SE069
0QD1754
SC-62
500ns
0DG17SL,
Schottky Diode SC-62
|
SE046
Abstract: sin wave to square 15X15 oc sc62
Text: COLLMER S E M I C O N D U C T O R INC 4flE D 52307^2 D00174fl 2flfl « C O L SE046 o .95 A 'T-oi - u Outline D raw ings SC HO TTK Y BARRIER D IO D E 16 4.6 MAX. m a :K. 18 MAX. 1 tili3» 1) 0.55 MAXJ_J_ 0.44 MAX. . • Features • Surface m ount device •
|
OCR Scan
|
PDF
|
SE046
D00174fl
SC-62
500ns
52Bfl7TS
017SD
15X15
sin wave to square
15X15
oc sc62
|
Collmer SC
Abstract: SE059 Schottky Diode SC-62 Collmer Semiconductor
Text: COLLMER SEMICONDUCTOR INC MAE ]> 2B3A715 0001751 &7B * C 0 L SE059 1 .OA _ " p 0 3 - \ 3 Outline Drawings SC H O TTK Y BARRIER D IO D E 16 MAX, 4.6 MAX. 18 MAX. PU >i 1— I 0.48 MAX. 0.55 MAXvJ-U 0.44 MAX. 15 L5 3.0 • Features • S urface m o u n t device
|
OCR Scan
|
PDF
|
SE059
T-03-\3
SC-62
500ns
S91JJ
G001753
Collmer SC
Schottky Diode SC-62
Collmer Semiconductor
|
1210D1
Abstract: 20FWJ2C48M U20FWJ2C48M
Text: TOSHIBA 20FWJ2C48M,U20FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 20FWJ2C48M, U20FWJ2C48M SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage : VjrM—0.47V • Repetitive Peak Reverse Voltage
|
OCR Scan
|
PDF
|
20FWJ2C48M
U20FWJ2C48M
20FWJ2C48M,
20FWJ2C48M
12-10D1A
12-10D2A
1210D1
U20FWJ2C48M
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 20FWJ2C48M,U20FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 20FWJ2C48M, U20FWJ2C48M SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage : V pM= 0.47V • Repetitive Peak Reverse Voltage
|
OCR Scan
|
PDF
|
20FWJ2C48M
U20FWJ2C48M
20FWJ2C48M,
20FWJ2C48M
12-10D1A
12-10D2A
|
single phase full bridge inverter
Abstract: K2-SS
Text: SILICON DIFFUSED TYPE RECTIFIER MODULE O THREE PHASE FULL W A V E BRIDGE APPLICATIONS. O INVERTER E Q U IP M EN T FOR AC M O T O R CONTROL. O O 20L6P45 Unit in mm CHOPPER EQ U IPM EN T FOR DC M O T O R CONTROL. 15.510.3 15.5jt0-3 D C SUPPLY FOR BATTERY. O
|
OCR Scan
|
PDF
|
20L6P45
60sec.
60sec)
single phase full bridge inverter
K2-SS
|
|
|
Untitled
Abstract: No abstract text available
Text: TO SH IBA 20FWJ2C48M,U20FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 20FWJ2C48M, U20FWJ2C48M SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage : VjrM —0.47V • Repetitive Peak Reverse Voltage
|
OCR Scan
|
PDF
|
20FWJ2C48M
U20FWJ2C48M
20FWJ2C48M,
20FWJ2C48M
12-10D1A
12-10D2A
J2C48M
|
T460
Abstract: ESAD25M H150 T151 T930
Text: ESAD25M C,N,D (15A) IW üH ’î i : Outline Drawings FAST RECOVERY DIODE * Features _0£ Insulated package by fully molding. JEDEC EIAJ High voltage by mesa design. High reliability Connection Diagram : Applications o ESAD25M-DDC ®o— ►! I |4 .-»a
|
OCR Scan
|
PDF
|
ESAD25M
ESAD25M-DDC
ESAD25M-DDN
ESAD25M-GDD
I95t/R89)
Shl50
T460
H150
T151
T930
|
ESAE83-004
Abstract: P460 SC-65 T151 T760
Text: ESAE83-004 6oa IW H N ii : Outline Drawings » a y | > * - / < i J 7 r S r' f » - K S C H O T T K Y B A R R IE R DIODE ^ 3.2 to. I V 5 *».i 2.0 7.2«# • # £ : Features • <sv, JEDEC EIAJ Low VF SC-65 Super high speed switching. Connection Diagram High reliability by planer design
|
OCR Scan
|
PDF
|
ESAE83-004I60A)
SC-65
500ns
l95t/R89
ESAE83-004
P460
SC-65
T151
T760
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A SF10G48,SF10J48,USF10G48,USF10J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF10G48, SF10J48, USF10G48, USF10J48 M EDIUM PO W ER CONTROL APPLICATIONS. • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Gate Trigger Current
|
OCR Scan
|
PDF
|
SF10G48
SF10J48
USF10G48
USF10J48
SF10G48,
SF10J48,
USF10G48,
SF10G48-SF10J48
USF10G48-USF10J48
|
Untitled
Abstract: No abstract text available
Text: TO SH IB A 20DL2CZ47A,20FL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2CZ47A, 20FL2CZ47A SWITCHING TYPE POWER SUPPLY APPLICATION Unit in mm CONVERTER & CHOPPER APPLICATION • • • • Repetitive Peak Reverse Voltage : V rrm = 200, 300V
|
OCR Scan
|
PDF
|
20DL2CZ47A
20FL2CZ47A
20DL2CZ47A,
20DL2CZ47A
|
sm4500
Abstract: Gate Turn-off Thyristor sg3000gxh24 SG3000GXH24
Text: SG3000GXH24 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH24 SG3000GXH24 Unit in mm INVERTER APPLICATION RepetiUve Peak Off-State Voltage : 4500V R.M.S On-State Current : I t (R M S ) = 1200A Peak Turn-Off Current : I t GQM = 3000A Critical Rate of Rise of On-State Current : d i/d t= 4 0 0 A ///s
|
OCR Scan
|
PDF
|
SG3000GXH24
SG3000GXH24)
sm4500
Gate Turn-off Thyristor sg3000gxh24
SG3000GXH24
|
MIG20J951H
Abstract: No abstract text available
Text: TOSHIBA INTEGRATED GTR MODULE MIG20J951H Unit in mm High Power Switching Applications 1S.3Í1.0 15.3 Í 1.0 Motor Control Applications • Integrates Inverter, Converter and Brake Power Circuits in One Package. • Output Inverter Stage : 302OA/6OOV High Speed Type IGBT
|
OCR Scan
|
PDF
|
MIG20J951H
302OA/6OOV
103OA/8OOV
5A/600V
PW02130796
MIG20J951H
|
DIODE 20FL2C
Abstract: No abstract text available
Text: TOSHIBA 20DL2C48A,U20DL2C48A,20FL2C48A,U20FL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2C48A, U20DL2C48A, 20FL2C48A, U20FL2C48A SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • • • • Repetitive Peak Reverse Voltage : V r r m = 200, 300V
|
OCR Scan
|
PDF
|
20DL2C48A
U20DL2C48A
20FL2C48A
U20FL2C48A
20DL2C48A,
U20DL2C48A,
20FL2C48A,
20DL2C48A-20FL2C48A
20DL2C48
DIODE 20FL2C
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA SG1000GXH26 Unit in mm Inverter Application • Repetitive Peak Off-State Voltage: VDRM = 4500V • R.M.S. On-State Current: h RMS = -<2! 500A • Peak Turn-Off Current: 't g q m = 1 0 0 0 A • Critical Rate of Rise of On-State Current: d i/d t = 600A/JIS
|
OCR Scan
|
PDF
|
SG1000GXH26
00A/JIS
10OOV/
|
tlp508
Abstract: JIS-C-5020 JIS C7021 B10 TLP645 JIS-C-5003 JISC5700 TLP573 TLP546G SCR 7704
Text: 9. Reliability 9.1 General In recent years, as the application fields for photo couplers expand, more discussions are being made on reliability. For reliability improvement, it is insufficient to perform strinct process management and to have reliability tests such as life test and environmental tests. It is necessary to
|
OCR Scan
|
PDF
|
MIL-STD-883B
L-STD-883B
MIL-STD-883B
tlp508
JIS-C-5020
JIS C7021 B10
TLP645
JIS-C-5003
JISC5700
TLP573
TLP546G
SCR 7704
|
