Untitled
Abstract: No abstract text available
Text: PRESS RELEASE New Tools Announcement rd Date : December 7th , 2000 Author : Marketing group United Monolithic Semiconductors releases Agilent EEsof EDA ADS Design Kits for its open mode technologies To Business Editors/High Tech Writers ORSAY, Dec 7th, 2000-Team Focus : Foundry Services
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2000-Team
D-89081
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Untitled
Abstract: No abstract text available
Text: Agilent EEsof EDA W1918 LTE-Advanced Baseband Verification Library Baseband PHY Libraries for SystemVue Data Sheet Offering the Fastest Path from Algorithms to R&D Verification Key Benefits: • Accelerate your Physical Layer PHY design process with a superior
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W1918
5990-8135EN
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atf 36163 Low Noise Amplifier
Abstract: ATF-10236 ATF36163 ATF-36163 LTC1044CS8 18 sot-363 rf power amplifier ATF10236
Text: L and S Band Amplifiers using the ATF-36163 Low Noise PHEMT Application Note 1097 EESOF’s TouchstoneTM for The ATF-36163 PHEMT device has Windows and published S and Noise parameters. numerous applications as a low noise amplifier in the 900 MHz The reference plane for both the S
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ATF-36163
SC-70
atf 36163 Low Noise Amplifier
ATF-10236
ATF36163
LTC1044CS8
18 sot-363 rf power amplifier
ATF10236
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laser diode spice model simulation
Abstract: No abstract text available
Text: Agilent EEsof EDA W1714 SystemVue AMI Modeling Kit W1713 SystemVue SerDes Model Library Data Sheet Agilent’s W1714 SystemVue AMI Modeling Kit consists of SerDes libraries for SystemVue plus automatic IBIS AMI model generation. The W1713 SystemVue SerDes Model Library is a subset of W1714 that omits its code generation feature. It is used for architecture optimization of a serializer/deserializer SerDes
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W1714
W1713
5991-0170EN
laser diode spice model simulation
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ADS 10 diode
Abstract: diode ADS model S11 SCHOTTKY diode LSSP pn junction diode HSMS-2665 EESof b286DIE h286 die 5968-1885E
Text: Diode Detector Simulation using Hewlett-Packard EESOF ADS Software Application Note 1156 Introduction This application note has been written to demonstrate how the Hewlett-Packard EESOF ADS software package can be used to simulate a diode detector circuit reliably against temperature.
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HSMS-2865,
5968-1885E
ADS 10 diode
diode ADS model
S11 SCHOTTKY diode
LSSP
pn junction diode
HSMS-2665
EESof
b286DIE
h286 die
5968-1885E
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Untitled
Abstract: No abstract text available
Text: Agilent EEsof EDA W2349EP/ET ADS Electro-Thermal Simulator Data Sheet Temperature-Aware Circuit Simulation for RFIC and MMIC Design As higher power devices are integrated into smaller packages, thermal issues cause performance degradation, reliability problems, and even failures. Modeling thermal
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W2349EP/ET
5991-1522EN
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vhdl code for lte channel coding
Abstract: vhdl code CRC for lte qpsk modulation VHDL CODE MODULATOR ofdm 64-qam lte mimo 16 bit qpsk VHDL CODE channel equalization MIMO ofdm modulator LTE baseband LTE antenna design
Text: Agilent EEsof EDA • W1910 LTE Baseband Verification Library • W1912 LTE Baseband Exploration Library Baseband PHY Libraries for SystemVue Datasheet Turbocharge Your 3GPP LTE PHY Design Process How do you really know that your algorithm is interoperable with
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W1910
W1912
W1910EP/ET
W1912ET
5990-4283EN
vhdl code for lte channel coding
vhdl code CRC for lte
qpsk modulation VHDL CODE
MODULATOR ofdm 64-qam lte
mimo
16 bit qpsk VHDL CODE
channel equalization MIMO
ofdm modulator
LTE baseband
LTE antenna design
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WiMAX baseband
Abstract: qpsk demodulation VHDL CODE qpsk demapper VHDL CODE qpsk modulation VHDL CODE N7615B 16 bit qpsk VHDL CODE interleaver wimax HARQ MIMO HARQ *MIMO
Text: Agilent EEsof EDA W1911 WiMAX Baseband Verification Library W1913 WiMAX Baseband Exploration Library Baseband PHY Libraries for SystemVue Datasheet Turbocharge Your WiMAX PHY Design Process “How do you really know that your adaptation of WiMAX is still
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W1911
W1913
W1911EP/ET
W1913ET
5990-4422EN
WiMAX baseband
qpsk demodulation VHDL CODE
qpsk demapper VHDL CODE
qpsk modulation VHDL CODE
N7615B
16 bit qpsk VHDL CODE
interleaver wimax
HARQ MIMO
HARQ *MIMO
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Untitled
Abstract: No abstract text available
Text: Agilent EEsof EDA High Speed Digital Design with Advanced Design System Jump the Gigabit-per-Second Barrier Today’s high-speed digital designers require EDA tools that accurately model RF and microwave effects, and that analyze not only signal integrity, but also the power integrity, and EMI/EMC of serial and parallel
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5989-8392EN
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S11 SCHOTTKY diode
Abstract: Avago Technologies Schottky diode ADS model rf detector diode low power LSSP ADS 10 diode HSMS2865 k 2865 EEsof Circuit Components for Manual for ADS B-286
Text: Diode Detector Simulation using Avago Technologies EEsof ADS Software Application Note 1156 Introduction This application note has been written to demonstrate how the Avago Technologies EEsof ADS software package can be used to simulate a diode detector circuit reliably against
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HSMS-2865,
5968-1885E
S11 SCHOTTKY diode
Avago Technologies Schottky
diode ADS model
rf detector diode low power
LSSP
ADS 10 diode
HSMS2865
k 2865
EEsof Circuit Components for Manual for ADS
B-286
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Design Considerations for BJT Active Mixers
Abstract: Signal mixing NE602 nokia 5300 agilent ads balun diodes 4001 8970B nokia 1662 NE602 equivalent EESof nokia fasb
Text: Noise in Ring Topology Mixers Rick Poore Agilent EEsof EDA 1 Introduction For a classical double-balanced ring-diode mixer, it is expected that the conversion loss 4–5 dB should match the noise figure. This document explores the formal definition of noise figure and
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N3215B
Abstract: EESof
Text: Agilent EEsof EDA Designing for Signal Integrity with Advanced Design System Course Overview Course Numbers Agilent-Training Center: N3215A Onsite-Training: N3215B Length What you will learn Prerequisites 3 Days • A brief introduction to ADS is presented, showing schematic capture,
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N3215A
N3215B
5989-2890EN
N3215B
EESof
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EEsof Circuit Components for Manual for ADS
Abstract: W2320
Text: Agilent EEsof EDA Advanced Design System The Industry’s Leading RF, Microwave and High-Speed Design Platform ADS ADVANCED DESIGN SYSTEM Powerful. Easy. Complete. Advanced Design System ADS is the world’s leading electronic design automation (EDA) software
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BP-01-15-14)
5988-3326EN
EEsof Circuit Components for Manual for ADS
W2320
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ADS 10 diode
Abstract: S11 SCHOTTKY diode LSSP diode ADS model rf detector diode low power pn junction diode H286 b286DIE pn junction diode ideality factor HSMS-2865
Text: Diode Detector Simulation using Agilent Technologies EEsof ADS Software Application Note 1156 Introduction This application note has been written to demonstrate how the Agilent Technologies EEsof ADS software package can be used to simulate a diode detector circuit reliably against temperature.
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HSMS-2865,
5968-1885E
ADS 10 diode
S11 SCHOTTKY diode
LSSP
diode ADS model
rf detector diode low power
pn junction diode
H286
b286DIE
pn junction diode ideality factor
HSMS-2865
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STBC OFDM Matlab code
Abstract: GUIDE INSTALLATION rbs 2111 PAM matlab source code GMSK simulink MIMO OFDM Matlab code LTE FSK ask psk by simulink matlab RFID matlaB design ofdma in LTE simulink matlab simulink 16QAM wcdma simulink
Text: Agilent 89600 Vector Signal Analysis Software Data Sheet • Reach deeper into signals • Gather more data on signal problems • Gain greater insight Table of Contents Introduction .2
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5989-1786EN
STBC OFDM Matlab code
GUIDE INSTALLATION rbs 2111
PAM matlab source code
GMSK simulink
MIMO OFDM Matlab code LTE
FSK ask psk by simulink matlab
RFID matlaB design
ofdma in LTE simulink matlab
simulink 16QAM
wcdma simulink
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schematic diagram converter fdd to usb
Abstract: 16QPSK 802.11p future scope of wiMAX hcpm mimo model simulink 802.11p phy simulink 16QAM wcdma simulink ZigBee IEEE 802.15.4-2003
Text: Agilent 89600 Vector Signal Analysis Software Technical Overview • Reach deeper into signals • Gather more data on signal problems • Gain greater insight Table of Contents Overview .3
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cdma2000/1xEV-DV,
5989-1679EN
schematic diagram converter fdd to usb
16QPSK
802.11p
future scope of wiMAX
hcpm
mimo model simulink
802.11p phy
simulink 16QAM
wcdma simulink
ZigBee IEEE 802.15.4-2003
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Practical statistical simulation for efficient circuit design
Abstract: kopin
Text: P1: SFK Trim: 247mm x 174mm CUUK1544-09 9 CUUK1544/Fager Top: 12.653mm Design: Engg C Gutter: 16.871mm 978 0 521 76210 6 June 14, 2011 Practical statistical simulation for efficient circuit design Pete Zampardi, Yingying Yang, Juntao Hu, Bin Li, Mats Fredriksson,
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247mm
174mm
CUUK1544-09
CUUK1544/Fager
653mm
871mm
7033268A-GEN,
com/display/ads2009/Using
28DOE
Practical statistical simulation for efficient circuit design
kopin
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N3211A
Abstract: RF optimization training
Text: Advanced Design System Fundamentals Course Overview Course Numbers: Agilent Training Center: N3211A Onsite Training Center: N3211B Learn through a combination of lecture and hands-on exercises Course Overview What you will learn Agilent Technologies offers a mediumpaced, 3-day, detailed introduction to
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N3211A
N3211B
5988-2375EN
N3211A
RF optimization training
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500 watts amplifier schematic diagram pcb layout
Abstract: 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor
Text: MOTOROLA Order this document by AN1670/D SEMICONDUCTOR APPLICATION NOTE AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note demonstrates the feasibility of a
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AN1670/D
AN1670
500 watts amplifier schematic diagram pcb layout
500 watts amplifier schematic diagram
400 watts amplifier circuit diagram with specific
j327 transistor
PCB Rogers RO4003 substrate
smd transistor JJ
m30 smd TRANSISTOR
transistor RF 98 smd
computherm
SMD Transistor
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AN11436
Abstract: No abstract text available
Text: 62 7 % BFU530X NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU530X is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU530X
OT143B
BFU530X
AEC-Q101
AN11436
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Untitled
Abstract: No abstract text available
Text: 62 7 % BFU520 NPN wideband silicon RF transistor Rev. 2 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU520 is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU520
OT143B
BFU520
AEC-Q101
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matlab TMS320 communications
Abstract: simulink G.728 matlab hager purcell SIPRO SPI515 Delco g.711 simulation G.728 simulation matlab DELPHI E G S
Text: eXpressDSP_Standard_Revision_AB.qxd T H E 9/7/1999 W 1:15 AM O R L D L Page 1 E A D E R I N D S P A N D A N A L O G THE eXpressDSP Standard www.ti.com/sc/expressdsp September 20, 1999 More than 40 TI Third-Party Network members endorse new eXpressDSP Real-Time Software Technology
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40-plus
SPRM001
matlab TMS320 communications
simulink G.728 matlab
hager
purcell
SIPRO
SPI515
Delco
g.711 simulation
G.728 simulation matlab
DELPHI E G S
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NONLINEAR MODEL LDMOS
Abstract: No abstract text available
Text: Slide 1 Extracting RF Mosfet Spice Models MTT 1998 - Baltimore Md. by S. K. Leong Polyfet Rf Devices www.polyfet.com This presentation is available on our web site Slide 2 Why simulate? n n n n n n n Simulation - It’s the only way! Fast accurate results. What if analysis.
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HBFP0450
Abstract: HBFP-0450 LL1608-FH2N7S MGA-52543 Silicon Bipolar Transistor HBFP-0450 ADS MODEL 20NF2 agilent semiconductor
Text: A 400, 900 and 1800 MHz Buffer/Driver Amplifier using the Agilent HBFP-0450 Silicon Bipolar Transistor Application Note 1206 Introduction Agilent Technologies’ HBFP-0450 is a high performance isolated collector silicon bipolar transistor housed in 4-lead SC-70 SOT-343
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HBFP-0450
SC-70
OT-343)
HBFP-0450
HBFP0450
5968-4957E
LL1608-FH2N7S
MGA-52543
Silicon Bipolar Transistor
HBFP-0450 ADS MODEL
20NF2
agilent semiconductor
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