DS1220AB-85
Abstract: DS1220AD-85 DS1225 DS1225AB DS1225AB-70 DS1225AD ICC01 2764 EPROM EEPROM 2864 ram DS1225
Text: DS1225AB/AD 64k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM or EEPROM Unlimited write cycles
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DS1225AB/AD
28-pin
DS1225AD)
DS1225AB)
DS1225AB/AD
28-PIN,
720-MIL
28-PIN
DS1220AB-85
DS1220AD-85
DS1225
DS1225AB
DS1225AB-70
DS1225AD
ICC01
2764 EPROM
EEPROM 2864
ram DS1225
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am29ma16
Abstract: AM29M16 AM29M16 PLD atmel 404 93c46 29f512 gal18v8 ATMEL 24C32A COP8622C atmel 93C46 AT27040
Text: Ironwood Electronics Programming Adapters PR.1 Programming Adapters allow the programming of PROM, PLD, EPROM, EEPROM or PAL devices on programmers or ATE equipment with DIP sockets. We support PLCC, LCC, PGA, SOIC including TSOP , FP, BGA and QFP packages.
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2864 eeprom
Abstract: DS1225Y-150 DS1225Y DS1225Y-200 EEPROM 2864 CMOS DS1225Y-150IND DS1225Y-170 DS1225Y-200IND EEPROM 2864 2764 eprom PINOUT
Text: DS1225Y 64k Nonvolatile SRAM FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles
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DS1225Y
28-pin
24-Pin
720URE
DS1225Y-150
DS1225Y-150+
DS1225Y-150IND
DS1225Y-150IND+
DS1225Y-170
DS1225Y-170+
2864 eeprom
DS1225Y-150
DS1225Y
DS1225Y-200
EEPROM 2864 CMOS
DS1225Y-150IND
DS1225Y-170
DS1225Y-200IND
EEPROM 2864
2764 eprom PINOUT
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DS1225AD-70
Abstract: DS1225AD-85 ICC01 DS1225AB DS1225AB-70 DS1225AB-85 DS1225AD DS1225AD-200
Text: DS1225AB/AD 64k Nonvolatile SRAM FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM or EEPROM
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DS1225AB/AD
28-pin
DS1225AD)
DS1225AB)
150ns
200ns
DS1225AD-70
DS1225AD-85
ICC01
DS1225AB
DS1225AB-70
DS1225AB-85
DS1225AD
DS1225AD-200
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Device-List
Abstract: CF775 MICROCHIP 24LC211 ae29F2008 im4a3-32 CNV-PLCC-MPU51 ep320ipc cf745 04 p ALL-11P3 29lv640
Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which
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ALL-11
Z8E000
ADP-Z8E001
Z8E001
Z90231
ADP-Z90259-SD
Z90241
ADP-Z90241-SD
Device-List
CF775 MICROCHIP
24LC211
ae29F2008
im4a3-32
CNV-PLCC-MPU51
ep320ipc
cf745 04 p
ALL-11P3
29lv640
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Device-List
Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which
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ALL-11
Z86E73
Z86E83
Z89371
ADP-Z89371/-PL
Z8E000
ADP-Z8E001
Z8E001
Device-List
cf745 04 p
24LC211
lattice im4a3-32
CF775 MICROCHIP
29F008
im4a3-64
ks24c01
ep320ipc
ALL-11P2
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2764 eeprom
Abstract: 7935 MC68HC805C4 MC68HCL05C8 ADI991R2 MC68HC05C4 MC68HC05C8 MC68HCL05C4 MC68HSC05C4 MC68HSC05C8
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MC68HC05C4AD/D Rev. 4.3 MC68HC05C4 MC68HC05C8 MC68HC805C4 MC68HCL05C4 MC68HCL05C8 MC68HSC05C4 MC68HSC05C8 Addendum to MC68HC05C4 8-Bit Microcomputer Unit MCU ADI991R2 This Addendum provides corrections to the MC68HC05C4 Advanced Information Data
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MC68HC05C4AD/D
MC68HC05C4
MC68HC05C8
MC68HC805C4
MC68HCL05C4
MC68HCL05C8
MC68HSC05C4
MC68HSC05C8
ADI991R2
2764 eeprom
7935
MC68HC805C4
MC68HCL05C8
ADI991R2
MC68HC05C4
MC68HC05C8
MC68HCL05C4
MC68HSC05C4
MC68HSC05C8
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diode 7935
Abstract: EEPROM 27128 ADI-991-R2 ADI991R2 MC68HC05C4 MC68HC05C8 MC68HC805C4 MC68HCL05C4 MC68HCL05C8 MC68HSC05C4
Text: Freescale Semiconductor, Inc. Freescale Semiconductor Order this document by MC68HC05C4AD/D Rev. 4.3 MC68HC05C4 MC68HC05C8 MC68HC805C4 MC68HCL05C4 MC68HCL05C8 MC68HSC05C4 MC68HSC05C8 Addendum to MC68HC05C4 8-Bit Microcomputer Unit MCU ADI991R2 This Addendum provides corrections to the MC68HC05C4 Advanced Information Data
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MC68HC05C4AD/D
MC68HC05C4
MC68HC05C8
MC68HC805C4
MC68HCL05C4
MC68HCL05C8
MC68HSC05C4
MC68HSC05C8
ADI991R2
diode 7935
EEPROM 27128
ADI-991-R2
ADI991R2
MC68HC05C4
MC68HC05C8
MC68HC805C4
MC68HCL05C4
MC68HCL05C8
MC68HSC05C4
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DS2764
Abstract: DS2764AE DS2764BE J-STD-020A
Text: DS2764 High-Precision Li+ Battery Monitor with 2-Wire Interface www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS2764 high-precision Li+ battery monitor is a data-acquisition, information-storage, and safetyprotection device tailored for cost-sensitive battery
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DS2764
DS2764
64-bit
DS2764AE
DS2764BE
J-STD-020A
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Untitled
Abstract: No abstract text available
Text: NEC NEC Electronics Inc. pPD28C256 32,768 X 8-Bit CMOS EEPROM Description Pin Configuration The /JPD28C256 is a 262,144-bit electrically erasable and programmable read-only memory EEPROM orga nized as 32,768 x 8 bits and fabricated with an ad vanced CMOS process for high performance and low
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pPD28C256
/JPD28C256
144-bit
28-Pin
64-byte
7D-13
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A1HB
Abstract: 2764-16
Text: SEEcJ TECHNOLOGY INC 11E D a n ^ a 0DDS7?b 2 E/M48F010 1024K CMOS FLASH EEPROM 'T - M PRELIMINARY DATA SHEET Block Diagram Features • t - il- z i October 1989 12SK Byte FLASH Erasable Non-Volatile Memory U FLASH EEPROM Cell Technology » Electrical Chip and 1024 Byte Sector Erase
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E/M48F010
1024K
M48F010)
E48F010)
10OpF
MD400010/A
A1HB
2764-16
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DS1225Y
Abstract: No abstract text available
Text: DALLAS DS1225Y 64K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM
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DS1225Y
28-pin
DS1225Y
28-PIN
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DS1225Y
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR FEATURES DS1225Y 64K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Datais automatically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM • Unlimited write cycles
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OCR Scan
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PDF
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28-pin
DS1225Y
A0-A12
DS1225
DS1225Y
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Untitled
Abstract: No abstract text available
Text: DS1225AB/AD DALLAS SEMICONDUCTOR DS1225AB/AD 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of V cc • Data is automatically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM NC 1 1 28 1
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DS1225AB/AD
28-pin
DS1225AB/AD
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dallas ds1225y
Abstract: dallas ds 1225y EEPROM 2864 DS1225Y DS1225Y-150 2764 EEPROM DS1225 DS1225Y-170 DS1225Y-200 EEPROM 2864 CMOS
Text: DS 1225Y DALLAS SEMICONDUCTOR FEATURES DS1225Y 64K Nonvolatile SRAM PIN ASSIGNMENT • 10 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • Directly replaces 8K x 8 volatile static RAM or EEPROM
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DS1225Y
28-pin
A0-A12
DS1225Y
28-PIN
dallas ds1225y
dallas ds 1225y
EEPROM 2864
DS1225Y-150
2764 EEPROM
DS1225
DS1225Y-170
DS1225Y-200
EEPROM 2864 CMOS
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DS1225-200
Abstract: No abstract text available
Text: D S1225AB/AD DALLAS SEMICONDUCTOR FEATURES DS1225AB/AD 64K Nonvolatile SRA M PIN ASSIGNMENT • Data retention in the absence of V cc • Data is automatically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM NC i 1 28 I
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S1225AB/AD
DS1225AB/AD
28-pin
150ns,
170ns,
200ns
DS1225AB/AD
DS1225-200
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Untitled
Abstract: No abstract text available
Text: DS1225AB/AD DALLAS SEMICONDUCTOR FEATURES DS1225AB/AD 64K Nonvolatile SR A M PIN ASSIGNMENT • Data retention in the absence of V c c • Data is automatically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM NC I 1 2* 1
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DS1225AB/AD
150ns,
170ns,
200ns
28-pin
DS1225AB/AD
28-PIN
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2864 eeprom
Abstract: EEPROM 2864 Ram 2864 2764 EPROM 2864 EPROM 2764 EEPROM 2864 RAM nv sram 8 pin 2764 eprom PINOUT EEPROM 2864 CMOS
Text: DS1225Y DALLAS DS1225Y SEMICONDUCTOR 6 4 K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 - 1 A12 1 • Data is automatically protected during power loss A7 • Directly replaces 8K x 8 volatile static RAM or EEPROM
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DS1225Y
28-pin
DS1225Y
2864 eeprom
EEPROM 2864
Ram 2864
2764 EPROM
2864 EPROM
2764 EEPROM
2864 RAM
nv sram 8 pin
2764 eprom PINOUT
EEPROM 2864 CMOS
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DS1225Y
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc NC 1 1 • Data is automatically protected during power loss 28 g VCC A12 I 2 27 § WE • Directly replaces 8K x 8 volatile static RAM or EEPROM
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OCR Scan
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PDF
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DS1225Y
150ns,
170ns,
200ns
28-pin
0S1225Y
DS1225Y
28-PIN
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DS1225Y
Abstract: DS1225Y-200 225Y DS1225Y-150 DS1225Y-170 DS122SY
Text: 6 0 DS1225Y DALLAS SEMICONDUCTOR 64K Nonvolatile SRAM PIN ASSIGNMENT • Directly replaces 8K x 8 volatile static RAM or EEPROM . NC 1 1 28 1 VCC À12 | 2 27 1 WE A7 0 • Data is automatically protected during power loss CO • Data retention in the absence of Vcc
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DS1225Y
28-pin
228-PIN
28-PIN
DS1225Y-200
225Y
DS1225Y-150
DS1225Y-170
DS122SY
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Untitled
Abstract: No abstract text available
Text: DS12250/E DALLAS DS1225D/E 64K Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 8K EEPROM x 8 volatile static RAM or • Low-power CMOS
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DS12250/E
DS1225D/E
28-pin
S1225D
28-PIN
010TNA
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IC 2864 eeprom
Abstract: dallas ds 1225y dallas ds1225y ic 2864 eprom DS1225Y
Text: DS1225Y DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of V c c NC 1 •-J VCC ro 1 A7 | 3 26 | NC A12 • Directly replaces 8K x 8 volatile static RAM or EEPROM 28 1 • I • Data is automatically protected during power loss
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DS1225Y
28-pin
Vcc11.
DS1225Y
IC 2864 eeprom
dallas ds 1225y
dallas ds1225y
ic 2864 eprom
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DS1225Y
Abstract: No abstract text available
Text: DS 1225Y DALLAS SEMICONDUCTOR D S1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data is automatically protected during power loss • Directly replaces 8 K x 8 volatile static RAM or EEPROM 1 28 § VCC A12 I 2 27 § WE A7 I 3 26 g NC A6 I « 25 B A8
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1225Y
S1225Y
28-pin
Ebl413D
DS1225Y
28-PIN
2L1413Q
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IC 2864 eeprom
Abstract: DS1225Y
Text: D S 1225Y DALLAS SEMICONDUCTOR F E AT URE S D S 12 2 5 Y 64K Nonvolatile SRAM PIN A S S I G N M E N T • 10 years m inimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM
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OCR Scan
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PDF
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1225Y
DS1225
28-pin
DS122SY
IC 2864 eeprom
DS1225Y
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