EE-SX1109
Abstract: EE-SX1131 Z4D-B01 EY3A-112 SX110 EE-SX1107 EE-SX1108 IR DETECTOR 940nm 940 nm emitter ir 3mm
Text: Omron 08 Cat 774-995 5/10/07 16:04 Page 828 Photomicrosensor Selector Guide Text Model EE-SY313/413 Text Photomicrosensor-Transmissive – EE-SX1107/1108/1109/1131 EE-SF5B EE-SY110 EE-SY310/410 • Surface mount design, tape and reel packaging facilitate automated PCB.
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EE-SY313/413
EE-SX1107/1108/1109/1131
EE-SY110
EE-SY310/410
EE-SX1131)
E904-E2-01A
EE-SX1109
EE-SX1131
Z4D-B01
EY3A-112
SX110
EE-SX1107
EE-SX1108
IR DETECTOR 940nm
940 nm
emitter ir 3mm
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NTC 20K
Abstract: CIRCUIT SCHEMATIC CAR ECU Analog devices branding codes monoflop
Text: Integrated Precision Battery Sensor for Automotive System ADuC7032-8L FEATURES Memory 96 kB Flash/EE memory, 6 kB SRAM 10k-cycle Flash/EE endurance, 20-year Flash/EE retention In-circuit download via JTAG and LIN 64 x 16-bit result FIFO for current and voltage ADC
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ADuC7032-8L
10k-cycle
20-year
16-bit
48-lead,
MS-026-BBC
48-Lead
ST-48)
ADuC7032BSTZ-8L-RL
EVAL-ADUC7032QSPZ1
NTC 20K
CIRCUIT SCHEMATIC CAR ECU
Analog devices branding codes
monoflop
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Untitled
Abstract: No abstract text available
Text: Integrated Precision Battery Sensor for Automotive System ADuC7032-8L FEATURES Memory 96 kB Flash/EE memory, 6 kB SRAM 10k-cycle Flash/EE endurance, 20-year Flash/EE retention In-circuit download via JTAG and LIN 64 x 16-bit result FIFO for current and voltage ADC
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PDF
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ADuC7032-8L
10k-cycle
20-year
16-bit
48-lead,
48-Lead
ST-48
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ADUC7032BSTZ-88
Abstract: EPS ECU block diagram CODE WU ADUC7032BSTZ-88-RL
Text: Integrated Precision Battery Sensor for Automotive System ADuC7032-8L FEATURES Memory 96 kB Flash/EE memory, 6 kB SRAM 10k-cycle Flash/EE endurance, 20-year Flash/EE retention In-circuit download via JTAG and LIN 64 x 16-bit result FIFO for current and voltage ADC
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ADuC7032-8L
16-bit
16-/32-bit
48-Lead
51706-A
ST-48
ADUC7032BSTZ-88
EPS ECU block diagram
CODE WU
ADUC7032BSTZ-88-RL
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CIRCUIT SCHEMATIC CAR ECU
Abstract: ARM7 pin configuration cars ecu automotive ecu manual car engine ecu car ecu
Text: Integrated Precision Battery Sensor for Automotive System ADuC7032-8L FEATURES Memory 96 kB Flash/EE memory, 6 kB SRAM 10k-cycle Flash/EE endurance, 20-year Flash/EE retention In-circuit download via JTAG and LIN 64 x 16-bit result FIFO for current and voltage ADC
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Original
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PDF
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ADuC7032-8L
10k-cycle
20-year
16-bit
48-lead,
MS-026-BBC
48-Lead
ST-48)
ADuC7032BSTZ-8L-RL
EVAL-ADUC7032QSPZ1
CIRCUIT SCHEMATIC CAR ECU
ARM7 pin configuration
cars ecu
automotive ecu manual
car engine ecu
car ecu
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EE-SY410
Abstract: EE-SY310
Text: Opto–Switch EE–SY310 / EE–SY410 Reflective Incorporates a photo–IC chip with a built-in detector element and amplifier. Detector element has built-in temperature compensation circuit. Sensing distance 5mm. A wide supply voltage range: 4.5 to 16 VDC
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SY310
SY410
EE-SY310)
EE-SY410)
EE-SY410
EE-SY310
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Untitled
Abstract: No abstract text available
Text: Back Opto–Switch EE–SX398 / EE–SX498 Transmissive Incorporates a photo–IC chip with a built-in detector element and amplifier. Incorporates a detector element with a built-in temperature compensation circuit. A wide supply voltage range: 4.5 to 16 VDC
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EE-SX398)
EE-SX498)
SX398
SX498
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EE-SY410
Abstract: EE-SY310
Text: Back Opto–Switch EE–SY310 / EE–SY410 Reflective Incorporates a photo–IC chip with a built-in detector element and amplifier. Detector element has built-in temperature compensation circuit. Sensing distance 5mm. A wide supply voltage range: 4.5 to 16 VDC
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PDF
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SY310
SY410
EE-SY310)
EE-SY410)
EE-SY410
EE-SY310
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EE-SX4
Abstract: No abstract text available
Text: Back Opto–Switch EE–SX301 / EE–SX401 Transmissive Incorporates a photo–IC chip with a built-in detector element and amplifier. Detector element has built-in temperature compensation circuit. A wide supply voltage range: 4.5 to 16 VDC Directly connects to C-MOS and TTL.
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EE-SX301)
EE-SX401)
SX301
SX401
EE-SX4
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Untitled
Abstract: No abstract text available
Text: Opto–Switch EE–SX3081 / EE–SX4081 Transmissive Incorporates a photo–IC chip with a built-in detector element and amplifier. Detector element has built-in temperature compensation circuit. A wide supply voltage range: 4.5 to 16 VDC Directly connects to C-MOS and TTL.
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EE-SX3081)
EE-SX4081)
SX3081
SX4081
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Untitled
Abstract: No abstract text available
Text: Back Opto–Switch EE–SX384 / EE–SX484 Transmissive Incorporates a photo–IC chip with a built-in detector element and amplifier. Detector element has built-in temperature compensation circuit. A wide supply voltage range: 4.5 to 16 VDC Directly connects to C-MOS and TTL.
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EE-SX384)
EE-SX484)
SX384
SX484
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EE-SX1055
Abstract: sat 1205
Text: Omron 08 Cat 774-995 5/10/07 16:04 Page 854 Text Photomicrosensor-Transmissive – EE-SX1055 Text Photomicrosensor-Transmissive – EE-SX1055 Features • Dimensions ■ Longer leads allow the sensor to be mounted Note: All units are in millimetres unless otherwise indicated.
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EE-SX1055
E913-E2-01A
EE-SX1055
sat 1205
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EE-SX3088
Abstract: EE-SX4088
Text: Opto–Switch EE–SX3088 EE–SX4088 Transmissive Incorporates a photo–IC chip with a built-in detector element and amplifier. A wide supply voltage range: 4.5 to 16 VDC Directly connects to C-MOS and TTL. High resolution with a 0.5-mm-wide sensing aperture.
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SX3088
SX4088
EE-SX3088)
EE-SX4088)
EE-SX3088
EE-SX4088
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EE-SX405
Abstract: No abstract text available
Text: Opto–Switch EE–SX305 / EE–SX405 Transmissive Incorporates a photo–IC chip with a built-in detector element and amplifier. Detector element has built-in temperature compensation circuit. A wide supply voltage range: 4.5 to 16 VDC Directly connects to C-MOS and TTL.
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EE-SX305)
EE-SX405)
SX305
SX405
EE-SX405
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Untitled
Abstract: No abstract text available
Text: PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic
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OCR Scan
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PDF
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PALCE29M16H-25
24-Pin
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pal 007a
Abstract: PT 2299 PAL 002a PALCE29M16 PALCE29M16H PALCE29M16H-25 PD3024 ttl pl 2303
Text: COM’L PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic
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OCR Scan
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PDF
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PALCE29M16H-25
24-Pin
8811-043A
pal 007a
PT 2299
PAL 002a
PALCE29M16
PALCE29M16H
PALCE29M16H-25
PD3024
ttl pl 2303
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Untitled
Abstract: No abstract text available
Text: COM’L: H-25 PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic
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OCR Scan
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PDF
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PALCE29MA16H-25
24-Pin
PALCE29M
A16H-25
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Untitled
Abstract: No abstract text available
Text: FINAL COM’L: H-25 Lattice/Vantis PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic
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OCR Scan
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PDF
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PALCE29MA16H-25
24-Pin
PALCE29M
A16H-25
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Untitled
Abstract: No abstract text available
Text: FINAL COM’L: H-25 PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic
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OCR Scan
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PDF
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PALCE29M16H-25
24-Pin
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Untitled
Abstract: No abstract text available
Text: FINAL COM'L: H-25 il PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic need Aicro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic
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OCR Scan
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PDF
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PALCE29M16H-25
24-Pin
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Untitled
Abstract: No abstract text available
Text: COM’L: H-25 Advanced Micro Devices PALCE29M A16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic
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OCR Scan
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PDF
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PALCE29M
A16H-25
24-Pin
02575Eb
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pt 2358
Abstract: No abstract text available
Text: FINAL COM’L: H-25 PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic
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OCR Scan
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PDF
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PALCE29MA16H-25
24-Pin
pt 2358
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Untitled
Abstract: No abstract text available
Text: s i «»I COM’L PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allow s reprogrammability ■ 16 bidirectional user-programmable I/O logic
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OCR Scan
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PDF
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PALCE29M16H-25
24-Pin
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labpro
Abstract: str 5717 pal 007a 617-2240 lm 4558 PAL 002a pal 010a PALCE29M16 PALCE29M16H PALCE29M16H-25
Text: ai 19*1 COM’L a Advanced Micro Devices PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic
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OCR Scan
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PDF
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PALCE29M16H-25
24-Pin
02S73Ã
WCP-13M-6/91-
labpro
str 5717
pal 007a
617-2240
lm 4558
PAL 002a
pal 010a
PALCE29M16
PALCE29M16H
PALCE29M16H-25
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