EDI8L24128V Search Results

EDI8L24128V Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
EDI8L24128V12AC		White Electronic Designs	128Kx24 CMOS High Speed Static RAM		Original	PDF
EDI8L24128V12BC		White Electronic Designs	128Kx24 SRAM 3.3 Volt		Original	PDF
EDI8L24128V15AC		White Electronic Designs	128Kx24 CMOS High Speed Static RAM		Original	PDF

EDI8L24128V Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
7665 Abstract: MO-47AE Text: EDI8L24128V 128Kx24 SRAM 3.3 Volt ADVANCED 128Kx24 CMOS High Speed Static RAM Features 128Kx24 bit CMOS Static Random Access Memory Array • Fast Access Times: 12 and 15ns • Individual Byte Enables • User Configurable Organization with Minimal Additional Logic	Original	PDF	EDI8L24128V 128Kx24 MO-47AE) EDI8L24128V no8V15AC MO-47AE 7665 MO-47AE
EDI8L24129V Abstract: No abstract text available Text: EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V is ideal for creating a single chip memory solution	Original	PDF	EDI8L24129V 128Kx24 EDI8L24129VxxBC 128Kx8 EDI8L24129V DSP5630x 21060L 21062L EDI8L24129V,
MO-47AE Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31 Text: EDI8L32512V White Electronic Designs 512Kx32 SRAM Module.3.3V FEATURES    ADSP-21060L SHARC  ADSP-21062L (SHARC)  Texas Instruments TMS320LC31   The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and	Original	PDF	EDI8L32512V 512Kx32 ADSP-21062L TMS320LC31 EDI8L32512V ADSP-21060L MPC860 MO-47AE ADSP-21060L ADSP-21062L EDI8L32128V MPC860 TMS320LC31
EDI8L32512V-AC Abstract: EDI8L32128V EDI8L32512V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L Text: White Electronic Designs EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC	Original	PDF	EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 512Kx8, EDI8L32512V-AC EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L
ADSP-21060L Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE Text: EDI8L32128V 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM Features 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization	Original	PDF	EDI8L32128V 128Kx32 ADSP-21060L ADSP-21062L MO-47AE) EDI8L32128V EDI8L32128V15AI EDI8L32128V20AI ADSP-21060L ADSP-21062L EDI8L32512V MO-47AE
60MHZ Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE Text: White Electronic Designs EDI8L32128V 128Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION 128Kx32 bit CMOS Static Analog SHARC TM External Memory Solution ADSP-21060L ADSP-21062L Random Access Memory Array Fast Access Times: 12, 15 and 20ns User Configurable Organization	Original	PDF	EDI8L32128V 128Kx32 ADSP-21060L ADSP-21062L MO-47AE) EDI8L32128V 60MHZ ADSP-21060L ADSP-21062L EDI8L32512V MO-47AE
EDI8L32512V Abstract: No abstract text available Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V T NO FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.	Original	PDF	EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 EDI8L32512C
5630x Abstract: No abstract text available Text: EDI8L24512V 512Kx24 SRAM Module Preliminary 512Kx24 CMOS High Speed Static RAM Features 512Kx24 bit CMOS Static DSP Memory Solution • Motorola DSP 5630x • Analog Devices SHARCTM Random Access Memory Array • Fast Access Times: 12, 15, 17, and 20ns The EDI8L24512V is a high speed, 3.3V, 12 megabit	Original	PDF	EDI8L24512V 512Kx24 5630x EDI8L24512V DSP5630x EDI8L24512V12AC EDI8L24512V15AC EDI8L24512V17AC 5630x
cd 5151 Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31 Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution	Original	PDF	EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 EDI8L32512C lineDQ02 cd 5151 ADSP-21060L ADSP-21062L MPC860 TMS320LC31
EDI8L32128V Abstract: EDI8L32512V MO-47AE TMS320LC31 Text: EDI8L32256V 256Kx32 SRAM 256Kx32 , 3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns, allowing the creation of a no wait state DSP memory solution. The device can be configured as a 256Kx32 and used to	Original	PDF	EDI8L32256V 256Kx32 256Kx32 EDI8L32256V TMS320LC31, 512Kx16. 512Kx48 256Kx24s EDI8L24256V) EDI8L32128V EDI8L32512V MO-47AE TMS320LC31
Untitled Abstract: No abstract text available Text: W EDI8L32128V £ \ ElfCTROMC 0E9GN& MCI 128Kx32 SRAM 3.3 Vot 128KX32CMOSHigh Speed Static RAM ¡Features The EDI8L32128V is a high speed, 3.3 volt, four megabit 128Kx32 bit CMOS Static Analog SHARC External Memory Solution density Static RAM. The device is available with access	OCR Scan	PDF	EDI8L32128V 128Kx32 ADSP-21060L ADSP-210621Random MO-47AE) 128KX32CMOSHigh EDI8L32128V EDI8L32128V12AC EDI8L32128V15AC
ADSP2106XL Abstract: No abstract text available Text: EDI8L32512V K>L 512Kx32SftAMModuk ELECIROMC 0E9GN1 N C 1 Preliminary 512KX32CMOSHigh Speed Static RAM F eatu re s DSP Memory Solution • ADSP-21060L SHARC The EDI8L32512V is a high speed, 3.3V, 16 megabit • ADSP-21062L (SHARC) SRAM. The device is available with access times of 12,	OCR Scan	PDF	EDI8L32512V 512Kx32SftAMModuk 512KX32CMOSHigh EDI8L32512V sTMS320LC31 EDI8L32256V ECN8L32512V ADSP2106XL
512KX24 Abstract: 128KX24 Text: ma DSP SOLUTIONS aSCTRONIC DÉSKSN& W C X24ASYNCHRONOUS FAMILY 128K AND 512Kx24 SV/3.3V EDI's x24 Asynchronous SRAM family is de signed in support of Analog Devices ADSP- * 2106x DSPs. The family includes densities of 128Kx24 and 5!2Kx24. The family of devices	OCR Scan	PDF	X24ASYNCHRONOUS 512Kx24 2106x 128Kx24 2Kx24. MO-47AE EDI8L24128CxxAC EDI8L24512CxxAC EDI8L24128VxxAC EDI8L24512VxxAC
256kx32 Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 Theta-J Text: ^EDI EDI8L32256V 256Kx32 SRAM ELECTRONIC DESIGNS. INC 256Kx32,3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit 256Kx32 bit CMOS Static S RAM. The device is available with access times of 12,15, DSP Memory Solution 17 and 20ns, allowing the creation of a no w ait state DSP	OCR Scan	PDF	EDI8L32256V 256Kx32 21060L ADSP-21062L TMS320LC31 MO-47AE EDI8L32256V avai8L32256V15AC ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE Theta-J

JEDECMO-47AE Abstract: No abstract text available Text: ^EDI ED I8L32512V 512Kx32 SRAMModule ELECTRONIC DESIGNS, INC 512Kx32 CMOSHigh Speed Static RAM Features DSP Memory Solution • ADSP-21060L SHARC • ADSP-21062L (SHARC) • TMS320LC31 The ED I8L32512V is a high speed, 3.3V, 16 m egabit SRAM . The device is available w ith access tim es of 12,	OCR Scan	PDF	I8L32512V 512Kx32 ADSP-21062L I8L32512V ADSP-21060L TMS320LC31 MPC860 S320LC EDI8L32512V JEDECMO-47AE
Untitled Abstract: No abstract text available Text: ^EDI E D I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS, INC Asynchronous, 3.3V, 128Kx24 SRAM Features The EDI8L24129VxxBC is a 3.3V, three m egabit SRAM 128Kx24 bit CMOS Static constructed with three 128Kx8 die mounted on a m ulti Random Access Memory Array	OCR Scan	PDF	I8L24129V 128KX24 128Kx24 EDI8L24129VxxBC 128Kx8 EDI8L24129V SP5630x EDI8L24129V15BI MO-163