cr 406 transistor
Abstract: QM100DY-2HB
Text: MITSUBISHI TRANSISTOR MODULES j QM100DY-2HBK ¡ HIGH POWER SWITCHING USE INSULATED TYPE I Q M 100DY-2HBK i Í • Ic Collector current. 10QA Collector-emitter voltage.1000V • hFE DC current gain.750
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QM100DY-2HBK
100DY-2HBK
E80276
E8Q271
cr 406 transistor
QM100DY-2HB
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300HA-24
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM300HA-24 HIGH POWER SWITCHING USE INSULATED TYPE QM 300HA-24 • Ic • V cex Collector cu rre n t. 300A • hFE DC current g a in .75 C ollector-em itter vo lta g e . 1200V
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QM300HA-24
300HA-24
E80276
E8Q271
300HA-24
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transistor cay
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES 30E 2Y Q M \ / E 3Y - H j MEDIUM POWER SWITCHING USE INSULATED TYPE 3 ! QM30E2Y/E3Y-H • lc • V cex • Hfe Collector current. 30A j Collector-emitter voltage. 600V DC current gain. 75
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QM30E2Y/E3Y-H
E80276
E8Q271
transistor cay
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