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    cr 406 transistor

    Abstract: QM100DY-2HB
    Text: MITSUBISHI TRANSISTOR MODULES j QM100DY-2HBK ¡ HIGH POWER SWITCHING USE INSULATED TYPE I Q M 100DY-2HBK i Í • Ic Collector current. 10QA Collector-emitter voltage.1000V • hFE DC current gain.750


    OCR Scan     		PDF QM100DY-2HBK 100DY-2HBK E80276 E8Q271 cr 406 transistor QM100DY-2HB

    300HA-24

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM300HA-24 HIGH POWER SWITCHING USE INSULATED TYPE QM 300HA-24 • Ic • V cex Collector cu rre n t. 300A • hFE DC current g a in .75 C ollector-em itter vo lta g e . 1200V


    OCR Scan     		PDF QM300HA-24 300HA-24 E80276 E8Q271 300HA-24

    transistor cay

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES 30E 2Y Q M \ / E 3Y - H j MEDIUM POWER SWITCHING USE INSULATED TYPE 3 ! QM30E2Y/E3Y-H • lc • V cex • Hfe Collector current. 30A j Collector-emitter voltage. 600V DC current gain. 75


    OCR Scan     		PDF QM30E2Y/E3Y-H E80276 E8Q271 transistor cay