IRFK4J450
Abstract: IRFK4H054 IRFK4H450 IRFK4J054
Text: Bulletin E27107 International _ «ectmer 1RFK4H450,1RFK4J450 X Ö .K Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.
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E27107
IRFK4H450
IRFK4J450
E78996.
O-240
1RFK4H450JRFK4J450
IRFK4H054
IRFK4J054
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IR E78996
Abstract: 6J450 T45 diode 6H450 E78996 rectifier module E78996 diode FK 330
Text: INTERNATIONAL RECTIFIER bSE J> Wt 4ÛSS452 001b3E3 750 • INR Bulletin E27113 International IxqrIRectifier IRFK6H450,IRFK6J450 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996.
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SS452
001b3E3
E27113
IRFK6H450
IRFK6J450
E78996.
IR E78996
6J450
T45 diode
6H450
E78996 rectifier module
E78996
diode FK 330
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IR E78996
Abstract: E78996 rectifier module IRFK4H450 e78996 india IRFK4H054 IRFK4J054 IRFK4J450
Text: B u lle tin E 27107 International iKrëlRertifter IRFK4H450JRFK4J450 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.
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E27107
IRFK4H450
1RFK4J450
E78996.
T0-240
CH-8032
IL60067.
NJ07650.
FL32743.
CA90245.
IR E78996
E78996 rectifier module
e78996 india
IRFK4H054
IRFK4J054
IRFK4J450
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ior e78996
Abstract: E78996 rectifier module E78996 E78996 ior E78996 Diode International Rectifier SSC inr 470 E78996 G1 G2
Text: INTERNATIONAL RECTIFIER bSE » • 4655452 OOlbe'iT bOl ■ INR Bulletin E27109 International S Rectifier IRFK4HE50,IRFK4JE50 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996.
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E27109
IRFK4HE50
IRFK4JE50
E78996.
T0-240
toj75)
ior e78996
E78996 rectifier module
E78996
E78996 ior
E78996 Diode
International Rectifier SSC
inr 470
E78996 G1 G2
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ior e78996
Abstract: IR E78996
Text: INTERNATIONAL RECTIFIER bSE D m INR MÖ55452 DDlbEL.^ T74 Bulletin E27104 International 1»] Rectifier IRFK4H150.IRFK4J150 Isolated Base Power H E X -p ak Assembly - Parallel Chip Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.
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E27104
IRFK4H150
IRFK4J150
E78996.
T0-240
ior e78996
IR E78996
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ior e78996
Abstract: E78996 ior
Text: INTERNATIONAL RECTIFIER bSE » WÊ 4055452 DDlbBll T3T • INR Bulletin E27111 International ^ 1 Rectifier IRFK6H250,IRFK6J250 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996.
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E27111
IRFK6H250
IRFK6J250
E78996.
O-240
ior e78996
E78996 ior
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ior e78996
Abstract: E78996 ior e2711
Text: INTERNATIONAL RECTIFIER L5E » INR MÖSS4S2 GGlb32T 17*1 Bulletin E27114 International S Rectifier IRFK6HC50,IRFK6JC50 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.
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GGlb32T
E27114
IRFK6HC50
IRFK6JC50
E78996.
ior e78996
E78996 ior
e2711
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SS452
Abstract: ior e78996 E78996 ior
Text: INTERNATIONAL RECTIFIER bSE D m 4Ö554S2 0G:Lb221 TT7 • INR Bulletin E2795 International IïôrIRectifier IRFK2PC50,IRFK2FC50 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • • ■ ■ High Current Capability. UL recognised E78996.
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554S2
Lb221
E2795
IRFK2PC50
IRFK2FC50
E78996.
SS452
ior e78996
E78996 ior
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ior e78996
Abstract: irfk3d450 E78996 ior
Text: INTERNATIONAL RECTIFIER bSE D B 4Ô554S2 ÜQ1L2S1 7 34 • INR Bulletin E27100 International i ü Rectifier IRFK3D450,IRFK3F450 Isolated Base Power H EX-pak Assembly - Half Bridge Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.
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554S2
E27100
IRFK3D450
IRFK3F450
E78996.
T0-240
ior e78996
E78996 ior
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ior e78996
Abstract: irfk4h450 E78996 ior E78996
Text: INTERNATIONAL RECTIFIER b5E J> WÊ 4 0 5 5 45 2 OOlt.207 «l^T • INR Bulletin E2710/ International Rectifier IRFK4H450,IRFK4J450 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • ■ • • High Current Capability. UL recognised E78996.
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E2710/
IRFK4H450
IRFK4J450
E78996.
O-240
ior e78996
E78996 ior
E78996
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IRFK4J350
Abstract: ior e78996 3gu diode
Text: INT ERNATIONAL RE CTIFIER bSE D • 4Û55452 DDlb261 471 ■ INR Bulletin E27106 International îïqrI R atifier • • • • >RFK4H350,IRFK4J350 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration High Current Capability. UL recognised E78996.
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DDlb261
RFK4H350
IRFK4J350
E78996.
IRFK4J350
ior e78996
3gu diode
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IRFK2D450
Abstract: IR E78996 IRFK2F450
Text: Bulletin E2794 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • • • • Hiah Current Capability, J UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment. v F Description -The HEX-pak™ utilises the well-proven HEXFET™ die, combining
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E2794
IRFK2D450
IRFK2F450
E78996.
O-240
sensitive250
IRFK2D450JRFK2F450
IR E78996
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E78996 rectifier module
Abstract: E78996 G1 G2 E78996
Text: INTERNATIONAL RECTIFIER bSE T> • 4A5SMS2 DDlbS27 415 ■ INR Bulletin E2796 [ïô ^ R e c tifie r IR F K 2 D E 50 ,IR F K 2 F E 50 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • • • • High Current Capability. UL recognised E78996.
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E2796
IRFK2DE50
IRFK2FE50
E78996.
O-240
I123H
tOJ75)
E78996 rectifier module
E78996 G1 G2
E78996
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IRFK3D150
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER L5E D 4 ß 5 5 4 5 S Q01fa233 71T IINR Bulletin E2797 International 1k ?r 1R e c tifie r IR F K 3 D 150 ,»R FK 3 F 150 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • • • • High Current Capability. UL recognised E78996.
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Q01fa233
E2797
E78996.
O-240
IRFK3D150
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IRKCL91-06S02
Abstract: ior e78996 158lf B40DL100S05 IRKJL91-02S02 E78996 ior fm50h 1406 diode 1RKC IRKCL91-04S02
Text: Power Modules International IOR' R e c tifie r Diode/Diode, Fast lF A V @ T c Part Nu m be r (7) (8) (V) V FM 50 H z Vr rm (6) >FS M d > (A) (°C ) (A) 60 H z (A) (2) (V) trr (5) (ns) A th JC DC (°C/W ) B40DL10S02 B40DL20S02 B40DL40S02 B40DL60S02 B40CL10S02
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B40DL10S02
B40DL20S02
B40DL40S02
B40DL60S02
B40DL10S05
B40DL20S05
B40DL40S05
B40DL60S05
B40DL80S05
B40DL100S05
IRKCL91-06S02
ior e78996
158lf
IRKJL91-02S02
E78996 ior
fm50h
1406 diode
1RKC
IRKCL91-04S02
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diode g1s
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER b5E D • MÛSS4S2 G D l b m 43T ■ INR Bulletin E2790 International [ïq rI R e c tifie r IR F K 2 D 0 5 4 , IR F K 2 F 054 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • • • • High Current Capability.
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E2790
E78996.
T0-240
diode g1s
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ior e78996
Abstract: No abstract text available
Text: Bulletin 127403 rev. A 09/97 International i ö r Rectifier IRKDL450.S20 FAST DIODES s e r ie s SUPER MAGN-A-pak Power Modules Features • High power FAST recovery diode series ■ High current capability 460 A ■ 3000 V RMS isolating voltage with non-toxic substrate
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IRKDL450.
E78996
I27403
ior e78996
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thyristor BT 161
Abstract: No abstract text available
Text: I . I Bulletin 127104 rev. A 09/97 International i q r Rectifier i r k . f 7 2 „ s e r ie s FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules Features • 71 A Fast turn-off thyristor ■ Fast recovery diode ■ High surge capability
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E78996
thyristor BT 161
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ior e78996
Abstract: No abstract text available
Text: Bulletin 127106 rev. A 08/97 Inte rn ation al I ö r Rectifier T.HF SERIES POWER RECTIFIER DIODES T-Modules 40 A 70 A 85 A 110 A Features • E lectrically isolated base plate ■ Types up to 1600 V RRM ■ 3500 V RMg isolating voltage ■ S im plified m echanical designs,
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E78996
ior e78996
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tg1g
Abstract: high power thyristor scr 3f scr thyristor irkv 300
Text: Bulletin 127102 rev. A 10/97 International IQ R Rectifier SCR / SCR and SCR / DIODE Features • High voltage ■ E lectrically isolated base plate ■ 3000 VRMS isolating voltage ■ Industrial standard package ■ S im plified m echanical designs, rapid assem bly
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E78996
IRK230/250
tg1g
high power thyristor scr
3f scr thyristor
irkv 300
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