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Text: F-209 SMH–110–02–S–D SMH–120–02–G–S SMH–112–02–S–S .025"SQ SMT SOCKET SMH SERIES SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?SMH Insulator Material: Black LCP Contact Material: FILE NO. E111594
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F-209
E111594
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Text: F-209 SSW–116–22–G–D–VS SSW–130–22–S–S–VS .025"SQ SMT SOCKET SSW SERIES SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?SSW Insulator Material: Black LCP Contact Material: FILE NO. E111594 Phosphor Bronze
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F-209
E111594
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Text: F-209 MMS–110–01–L–DH MMS–112–02–T–SH MMS–108–01–T–SV MMS–116–02–L–DV 2mm BOX SOCKET MMS SERIES SPECIFICATIONS For complete specifications see www.samtec.com?MMS Insulator Material: Black LCP Contact Material: FILE NO. E111594
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F-209
E111594
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Text: F-209 ZML–113–02–G–D ZML–110–03–S–D ZML–125–04–G–D 1,27mm .050" STACKER SPECIFICATIONS Mates with: SMS, RSM For complete specifications see www.samtec.com?ZML Insulator Material: Black LCP Terminal Material: FILE NO. E111594 Phosphor Bronze
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F-209
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Text: F-209 RSM–110–02–S–D–K RSM–120–02–L–S RSM–130–02–S–D 1,27mm .050" SOCKET RSM SERIES SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?RSM Insulator Material: Black Liquid FILE NO. E111594
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F-209
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Text: F-209 HLE–116–02–G–DV HLE–110–02–G–DV–A HLE–130–02–G–DV .025"SQ SOCKET HLE SERIES SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?HLE Insulator Material: Black Liquid FILE NO. E111594 Crystal Polymer
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F-209
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Text: F-209 SUPPLEMENT MPAS–068–ZSGT–11 MPAS–144–ZSGT–13 MVAS, PIN GRID ARRAY SOCKETS MPAS, MSAS SERIES Mates with: MPAT, MVAT, MHAT, MSAT SPECIFICATIONS MPAS, MVAS Insulator Material: Black G.F. Polyester Contact: BeCu FILE NO. E111594 Shell: Brass except Style K
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F-209
E111594
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Text: SSW–125–01–G–P F-209 SSQ–115–04–S–T SOCKET STRIP SSW & SSQ SERIES SPECIFICATIONS For complete specifications see www.samtec.com?SSW or www.samtec.com?SSQ Insulator Material: Black Liquid Crystal Polymer FILE NO. E111594 -S & -D or Black High Temperature
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Text: EDE5132AABG Package Drawing 128-ball FBGA Unit: mm 10.5 ± 0.1 0.2 S A 13.5 ± 0.1 INDEX MARK 0.2 S B 0.2 S 1.2 max. S 0.1 0.35 ± 0.05 S 128-B0.45 ± 0.05 B0.15 M S A B 0.4 B 12.0 0.8 A INDEX MARK 2.0 0.8 8.8 ECA-TS2-0255-01 Preliminary Data Sheet E1115E40 Ver. 4.0
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EDE5132AABG
128-ball
128-B0
ECA-TS2-0255-01
E1115E40
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Text: F-209 SQW–112–01–F–D–VS–LC SQW–114–01–F–6 SQW–110–01–L–5 TM 2mm TIGER BUY SOCKET SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?SQW Insulator Material: Black Liquid Crystal Polymer FILE NO. E111594
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-6v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00013-6v0-E
MB85RC64V
MB85RC64V
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MB85RS1MT
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00022-2v0-E Memory FRAM 1M 128 K x 8 Bit SPI MB85RS1MT • DESCRIPTION MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00022-2v0-E
MB85RS1MT
MB85RS1MT
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00008-6v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128A • DESCRIPTION MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00008-6v0-E
MB85RS128A
MB85RS128A
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-7v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
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DS501-00010-7v0-E
MB85RC16V
MB85RC16V
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MB85RC256VPF-G-JNERE2
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-3v0-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00017-3v0-E
MB85RC256V
MB85RC256V
MB85RC256VPF-G-JNERE2
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-6v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
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DS501-00010-6v0-E
MB85RC16V
MB85RC16V
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MB85RC256
Abstract: RC256V FPT-8P-M08 E21200 2006FUJITSU
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-0v01-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00017-0v01-E
MB85RC256V
MB85RC256V
MB85RC256
RC256V
FPT-8P-M08
E21200
2006FUJITSU
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00008-5v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128A • DESCRIPTION MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00008-5v0-E
MB85RS128A
MB85RS128A
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Text: R O L C -1 2 5 - 0 2 - S - Q -L C F -2 0 4 R O L C -1 2 0 -0 2 -S - Q - P am ti R O L C -1 2 0 -0 2 -S -Q S P E C IF IC A T IO N S For complete specifications see www.samtec.com?ROLC Insulator Material: Black Liquid Crystal Polymer oleho . E111594 C ontact Material: BeCu
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E111594
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Text: ONE-PIECE LOW PROFILE SEL SERIES S P E C IF IC A T IO N S Large deflection For complete specifications see www.samtec.com?SEL Insulator Material: Liquid Crystal T O Polymer file no. E111594 Contact Material: Phosphor Bronze Current Rating: 1A @ 80°C Mating Force:
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E111594
60VAC
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704C
Abstract: E1114
Text: UNCONTROLLED DOCUMENT REV. PART NUMBER REV. SSN —LX01 1 704C B E.C.N. NUMBER AND REVISION COMMENTS DATE A E.C.N. # E1115 6 B /0 5 /0 4 - B E.C.N. # E1114S 1 1 .1 6 .0 6 NOTES: 1. MATERIAL; CLEAR POLYCARBONATE. 2, FR ES N EL SURFACE, A~A *£,35 [ 00 , 093 ] El
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E11156
B/05/04
E1114S
PR704C
704C
E1114
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Text: F -2 0 4 amtec L S 2 -1 3 0 -0 1 -L -D L S 2 -1 2 0 -0 1 -L -D -R A 1 2mm TERMIN AL/SOCKET LS2 SERIES S P E C IF IC A T IO N S M a te s w ith LS2 For complete specifications see www.samtec.com?LS2 In s u la to r M a te ria l: T O Liquid Crystal Polymer h u h o . E111594
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E111594
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704C
Abstract: E1115 b0504
Text: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. S S N — LX01 1 7 0 4 C A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. # DATE E1115 6 B /0 5 /0 4 NOTES: 1. MATERIAL; CLEAR POLYCARBONATE. 2, FRESNEL SURFACE, A~A *£ ,3 5 [ 0 0 , 0 9 3 ] El 'UNLESS OTHERWISE SPECIFED TOLERANCES PER DECIMAL fflECISIQN ARE; X = ± 1 <±0.039 , X J < = ± 0 5 (±0,020), m = ± 0 , 2 5 (M .910), X,XXX=±D,127 {±0,005).
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E11156
B/05/04
704C
E1115
b0504
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Untitled
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Text: U S B -B -S -S -B -S M USB-B, USBR-B SERIES STANDARD & RUGGED USB 2 SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com? USB-B or www.samtec.com?USBR-B Minimum 15N withdrawal force Insulator Material: High Temperature
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E1115M
EJ25094
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