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    LulzBot RM-TE0049

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    Slice Engineering P-CHB-RE-0049-RR1

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    iWave Systems Technologies Pvt Ltd iW-G15D-Q704-3D001G-E008G-ACD

    Development Boards & Kits - ARM i.MX 6 Quad Qseven (PMIC) SOM with development kit with Android OS with 12V, 2A Power Adapter
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    Aleph Objects Incorporated RM-TE0049

    3D Printer Filament, 1.75Mm, Tpu, Neon; Diameter:1.75Mm; Filament Colour:Neon; Filament Material:Tpu (Thermoplastic Polyurethane); Melting Temperature Min:-; Melting Temperature Max:216°C; Filament Weight:1Kg |Lulzbot RM-TE0049
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    E0049 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated


    Original     		Si1034X 2002/95/EC SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21


    Original     		Si1029X 2002/95/EC SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1036X www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) 0.540 at VGS = 4.5 V 0.5 0.600 at VGS = 2.5 V 0.2 0.700 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (TYP.) 0.72 nC D1


    Original     		Si1036X SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V


    Original     		Si1035X 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1071X Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 0.167 at VGS = - 10 V 0.96 - 30 0.188 at VGS = - 4.5 V 0.90 0.244 at VGS = - 2.5 V 0.79 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si1071X 2002/95/EC SC-89 Si1071X-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1051X Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 1.2 0.122 at VGS = - 4.5 V -8 0.141 at VGS = - 2.5 V 1.1 0.168 at VGS = - 1.8 V 0.60 0.198 at VGS = - 1.5 V 0.50 • Halogen-free According to IEC 61249-2-21


    Original     		Si1051X 2002/95/EC SC-89 Si1051X-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 RDS(on) () ID (A) 0.625 at VIN = 4.5 V ± 0.43 0.890 at VIN = 2.5 V ± 0.36 1.25 at VIN = 1.8 V ± 0.3 Si1040X 4 2, 3 S2 D2 Q2 • Halogen-free According to IEC 61249-2-21


    Original     		Si1040X 2002/95/EC SC89-6 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1025X Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (min) (V) RDS(on) () VGS(th) (V) ID (mA) - 60 4 at VGS = - 10 V - 1 to - 3.0 - 500 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • High-Side Switching


    Original     		Si1025X 2002/95/EC SC-89 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1056X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.089 at VGS = 4.5 V 1.32 0.098 at VGS = 2.5 V 1.26 0.121 at VGS = 1.8 V 1.13 Qg (Typ.) 5.2 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1056X 2002/95/EC SC-89 Si1056X-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1039X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.165 at VGS = - 4.5 V - 0.95 0.220 at VGS = - 2.5 V - 0.82 0.280 at VGS = - 1.8 V - 0.67 SC-89 (6-LEADS) D 1 6 D D 2 5 D APPLICATIONS 3 4 • Cell Phones and Pagers


    Original     		Si1039X 2002/95/EC SC-89 Si1039X-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SI1067X

    Abstract: No abstract text available
    Text: Si1067X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.150 at VGS = - 4.5 V 1.06 0.166 at VGS = - 2.5V 1.0 0.214 at VGS = - 1.8V 0.49 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si1067X 2002/95/EC SC-89 Si1067X-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 RDS(on) () ID (A) 0.625 at VIN = 4.5 V ± 0.43 0.890 at VIN = 2.5 V ± 0.36 1.25 at VIN = 1.8 V ± 0.3 Si1040X 4 2, 3 S2 D2 Q2 • Halogen-free According to IEC 61249-2-21


    Original     		Si1040X 2002/95/EC SC89-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1056X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.089 at VGS = 4.5 V 1.32 0.098 at VGS = 2.5 V 1.26 0.121 at VGS = 1.8 V 1.13 Qg (Typ.) 5.2 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1056X 2002/95/EC SC-89 Si1056X-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    VISHAY MARKING S10

    Abstract: No abstract text available
    Text: Si1037X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.195 at VGS = - 4.5 V - 0.84 0.260 at VGS = - 2.5 V - 0.73 0.350 at VGS = - 1.8 V - 0.64 SC-89 (6-LEADS) APPLICATIONS D 1 6 D D 2 5 D 3 4 • Cell Phones and Pagers


    Original     		Si1037X 2002/95/EC SC-89 Si1037X-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 VISHAY MARKING S10 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1023CX Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.756 at VGS = - 4.5 V - 0.35 1.038 at VGS = - 2.5 V - 0.35 1.44 at VGS = - 1.8 V - 0.1 2.4 at VGS = - 1.5 V - 0.05 • Halogen-free According to IEC 61249-2-21


    Original     		Si1023CX 2002/95/EC SC-89 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1069X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.184 at VGS = - 4.5 V - 0.94 0.268 at VGS = - 2.5 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si1069X 2002/95/EC SC-89 Si1069X-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1039X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.165 at VGS = - 4.5 V - 0.95 0.220 at VGS = - 2.5 V - 0.82 0.280 at VGS = - 1.8 V - 0.67 SC-89 (6-LEADS) D 1 6 D D 2 5 D APPLICATIONS 3 4 • Cell Phones and Pagers


    Original     		Si1039X 2002/95/EC SC-89 Si1039X-T1-GE3 11-Mar-11 PDF

    SOT-563 SOT-666

    Abstract: marking 802 soic8 sot-563 MOSFET D1 20l sot-23 siliconix MARKING CODE mSOp-8 siliconix code marking to-220 marking code 20L sot-23 sot23 V30114-T1
    Text: Si1024X Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 FEATURES D D D D D D D BENEFITS Very Small Footprint High-Side Switching Low On-Resistance: 0.7 W


    Original     		Si1024X OT-563 SC-89 SC70-6L SC89-6L Specification--PACK-0007-9 T-05206, AN826 SC-89: 20-Jun-03 SOT-563 SOT-666 marking 802 soic8 sot-563 MOSFET D1 20l sot-23 siliconix MARKING CODE mSOp-8 siliconix code marking to-220 marking code 20L sot-23 sot23 V30114-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1073X Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si1073X 2002/95/EC SC-89 Si1073X-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    ppg633

    Abstract: SI1023CX
    Text: Si1023CX Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.756 at VGS = - 4.5 V - 0.35 1.038 at VGS = - 2.5 V - 0.35 1.44 at VGS = - 1.8 V - 0.1 2.4 at VGS = - 1.5 V - 0.05 • Halogen-free According to IEC 61249-2-21


    Original     		Si1023CX 2002/95/EC SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 ppg633 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V


    Original     		Si1035X 2002/95/EC SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated


    Original     		Si1034X 2002/95/EC SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1025X Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (min) (V) RDS(on) () VGS(th) (V) ID (mA) - 60 4 at VGS = - 10 V - 1 to - 3.0 - 500 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • High-Side Switching


    Original     		Si1025X 2002/95/EC SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1034CX Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET


    Original     		Si1034CX SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF