skiip gar 170
Abstract: FAST HIGH VOLTAGE DIODE 4000 V igbt buck converter
Text: SKiiP 992 GAR 170 - 376 CTV Absolute Maximum Ratings Symbol 4 Conditions 1) Values Visol Top ,Tstg AC, 1min Operating / stor. temperature IGBT and VCES 5) VCC IC 3) Tj IF IFM IFSM 2 I t Diode) Driver VS1 VS2 fsmax dV/dt Diode Operating DC link voltage IGBT
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skiip gar 170
Abstract: gar170 IGBT 1200A
Text: SKiiP 1292 GAR 170 - 478 CTV Absolute Maximum Ratings Symbol 4 Conditions 1) Values Visol Top ,Tstg AC, 1min Operating / stor. temperature IGBT and VCES 5) VCC IC 3) Tj IF IFM IFSM 2 I t Diode) Driver VS1 VS2 fsmax dV/dt Diode Operating DC link voltage IGBT
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diode 900A
Abstract: No abstract text available
Text: SKiiP 992 GAL 170 - 377 CTV Absolute Maximum Ratings Symbol 4 Conditions 1) Values Visol Top ,Tstg AC, 1min Operating / stor. temperature IGBT and VCES 5) VCC IC 3) Tj IF IFM IFSM 2 I t Diode) Driver VS1 VS2 fsmax dV/dt Diode Operating DC link voltage IGBT
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Abstract: No abstract text available
Text: SKiiP 792 GB 170 - 373 CTV Absolute Maximum Ratings Symbol 4 Conditions 1) Values Visol Top ,Tstg AC, 1min Operating / stor. temperature IGBT and VCES 5) VCC IC 3) Tj IF IFM IFSM 2 I t Diode) Driver VS1 VS2 fsmax dV/dt Diode Operating DC link voltage IGBT
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S4 Diode
Abstract: diode 474 a
Text: SKiiP 1092 GB 170 - 474 CTV Absolute Maximum Ratings Symbol 4 Conditions 1) Values Visol Top ,Tstg AC, 1min Operating / stor. temperature IGBT and VCES 5) VCC IC 3) Tj IF IFM IFSM 2 I t Diode) Driver VS1 VS2 fsmax dV/dt Diode Operating DC link voltage IGBT
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Abstract: No abstract text available
Text: SKiiP 192 GD 170 - 374 CTV Absolute Maximum Ratings Symbol 4 Conditions 1) Values Visol Top ,Tstg AC, 1min Operating / stor. temperature IGBT and VCES 5) VCC IC 3) Tj IF IFM IFSM 2 I t Diode) Driver VS1 VS2 fsmax dV/dt Diode Operating DC link voltage IGBT
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Abstract: No abstract text available
Text: SKiiP 692 GAL 170 - 276 CTV Absolute Maximum Ratings Symbol 4 Conditions 1) Values Visol Top ,Tstg AC, 1min Operating / stor. temperature IGBT and VCES 5) VCC IC 3) Tj IF IFM IFSM 2 I t Diode) Driver VS1 VS2 fsmax dV/dt Diode Operating DC link voltage IGBT
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Abstract: No abstract text available
Text: SKiiP 292 GH 170 - 273 CTV Absolute Maximum Ratings Symbol 4 Conditions 1) Values Visol Top ,Tstg AC, 1min Operating / stor. temperature IGBT and VCES 5) VCC IC 3) Tj IF IFM IFSM 2 I t Diode) Driver VS1 VS2 fsmax dV/dt Diode Operating DC link voltage IGBT
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SKIIP GD
Abstract: No abstract text available
Text: SKiiP 292 GD 170 - 375 CTV Absolute Maximum Ratings Symbol 4 Conditions 1) Values Visol Top ,Tstg AC, 1min Operating / stor. temperature IGBT and VCES 5) VCC IC 3) Tj IF IFM IFSM 2 I t Diode) Driver VS1 VS2 fsmax dV/dt Diode Operating DC link voltage IGBT
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Abstract: No abstract text available
Text: SKiiP 592 GB 170 - 271 CTV Absolute Maximum Ratings Symbol 4 Conditions 1) Values Visol Top ,Tstg AC, 1min Operating / stor. temperature IGBT and VCES 5) VCC IC 3) Tj IF IFM IFSM 2 I t Diode) Driver VS1 VS2 fsmax dV/dt Diode Operating DC link voltage IGBT
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EUPEC Thyristor
Abstract: stromberg EUPEC DIODE T1503N T2563N T4003N T553N advantages of marketing costs
Text: MARKETING NEWS European PowerSemiconductor and Electronics Company Light triggered thyristors, optical fibres and laser diodes 1. Applications eupec has developed a series of light triggered thyristors into which a protection against overvoltage and dv/dt has been integrated in form of a “break over” diode.
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D-55442
EUPEC Thyristor
stromberg
EUPEC DIODE
T1503N
T2563N
T4003N
T553N
advantages of marketing costs
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AN-994
Abstract: IRLBD59N04E SMD-220 G10 zener diode smd zener diode KH v smd diode 59A
Text: PD -93910 IRLBD59N04E HEXFET Power MOSFET l l l l l l Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS on = 0.018Ω ID = 59A Description
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IRLBD59N04E
IRLBD59N04E
Lead-D2Pak252-7105
AN-994
SMD-220
G10 zener diode
smd zener diode KH v
smd diode 59A
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smd 39a diode zener
Abstract: 39A zener diode AN-994 IRLBD59N04E SMD-220
Text: PD -93910A IRLBD59N04E HEXFET Power MOSFET l l l l l l Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS on = 0.018Ω ID = 59A Description
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-93910A
IRLBD59N04E
IRLBD59N04E
Lead-D2Pa252-7105
smd 39a diode zener
39A zener diode
AN-994
SMD-220
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TH 2190 mosfet
Abstract: smd 39a diode zener TH 2190 mosfet isolated AN-994 IRLBD59N04E SMD-220 G10 zener diode 39A zener diode
Text: PD -93910B IRLBD59N04E HEXFET Power MOSFET Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS on = 0.018Ω ID = 59A Description The IRLBD59N04E is a 40V, N-channel HEXFET®
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-93910B
IRLBD59N04E
IRLBD59N04E
100pF,
AN-994.
TH 2190 mosfet
smd 39a diode zener
TH 2190 mosfet isolated
AN-994
SMD-220
G10 zener diode
39A zener diode
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STW26NM50FD
Abstract: STW26NM50F 500v ZENER DIODE ZVS phase-shift converters schematic diagram welding device
Text: STW26NM50FD N-CHANNEL 500V - 0.10Ω - 30A TO-247 FDmesh Power MOSFET with FAST DIODE TARGET DATA TYPE STW26NM50FD • ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.12Ω 30 A TYPICAL RDS(on) = 0.10Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
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STW26NM50FD
O-247
STW26NM50FD
STW26NM50F
500v ZENER DIODE
ZVS phase-shift converters
schematic diagram welding device
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zener diode - C 10 ST
Abstract: zener diode datasheet- C 10 ST
Text: STB9NK60ZD N-channel 600 V, 0.85 Ω typ., 7 A Zener-protected SuperFREDMESH Power MOSFET with fast diode in D²PAK Datasheet - production data Features TAB Order code VDS RDS(on) max. ID PTOT 0.95 Ω 7A 125 W STB9NK60ZDT4 600 V • Extremely high dv/dt capability
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STB9NK60ZD
STB9NK60ZDT4
AM16813v1
DocID9573
zener diode - C 10 ST
zener diode datasheet- C 10 ST
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Untitled
Abstract: No abstract text available
Text: STW29NK50ZD N-CHANNEL 500V - 0.12Ω - 29A TO-247 Fast Diode SuperMESH MOSFET TARGET DATA TYPE STW29NK50ZD VDSS RDS on ID Pw 500 V < 0.16 Ω 29 A 378 W TYPICAL RDS(on) = 0.12 Ω HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED LOW INTRINSIC CAPACITANCE
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STW29NK50ZD
O-247
STW29NK50ZD
O-247
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ZENER DIODE IN 47 45A
Abstract: No abstract text available
Text: STE45NK80ZD N-CHANNEL 800V - 0.11Ω - 45A ISOTOP FAST DIODE SuperMESH POWER MOSFET TARGET DATA TYPE STE45NK80ZD • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V < 0.13 Ω 45 A 600 W TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STE45NK80ZD
ZENER DIODE IN 47 45A
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HIGH VOLTAGE THYRISTOR
Abstract: THYRISTOR MODULE IXYS MCC 94 94-22io1B
Text: MCC 94 MCD 94 High Voltage Thyristor Module High Voltage Thyristor/Diode Modules VRSM VDSM VRRM VDRM V V 2100 2300 2000 2200 TO-240 AA Type MCC 94-20io1 B MCC 94-22io1 B ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C; VR = 0 dv/dt cr PGM Maximum Ratings
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O-240
94-20io1
94-22io1
HIGH VOLTAGE THYRISTOR
THYRISTOR MODULE IXYS MCC 94
94-22io1B
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Untitled
Abstract: No abstract text available
Text: MCC 94 MCD 94 High Voltage Thyristor Module High Voltage Thyristor/Diode Modules VRSM VDSM VRRM VDRM V V 2100 2300 2000 2200 TO-240 AA Type MCC 94-20io1 B MCC 94-22io1 B ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C; VR = 0 dv/dt cr Maximum Ratings
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O-240
94-20io1
94-22io1
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AN705
Abstract: application note gate driver with bootstrap capac motordrive circuits Si9910DJ fast recovering diodes for spike protection Si9910 Si9910DY VN50300 VN50300T INTRINSIC SAFE CIRCUIT
Text: AN705 Si9910 Adaptive Power MOSFET Driver Improves Performance in High-Voltage Half-Bridge Applications Jim Harnden The Si9910 is the first of a new generation of “adaptive” power MOSFET gate drivers. These adaptive drivers provide protection for the power MOSFET switching
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AN705
Si9910
Si9910
Si9910DJ
Si9910DY
AN705
application note gate driver with bootstrap capac
motordrive circuits
fast recovering diodes for spike protection
VN50300
VN50300T
INTRINSIC SAFE CIRCUIT
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Si9910DJ
Abstract: AN705 MA28 Si9910 Si9910DY VN50300 VN50300T SI9910 APPLICATION
Text: AN705 Siliconix The Si9910 Adaptive Power MOSFET Driver Improves Performance in HighĆVoltage HalfĆBridge Applications Jim Harnden Si9910 Circuit Description The Si9910 is the first of a new generation of adaptive" power MOSFET gate drivers. These adaptive drivers provide protection for the power
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AN705
Si9910
Si9910DJ
Si9910DY
AN705
MA28
VN50300
VN50300T
SI9910 APPLICATION
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Si9901BJ
Abstract: Si9901 SI9911 S1-99 S19901 SI99-01 si9914 Si9911/SI9914 M/PD-500
Text: S ilic o n ix SÌ9901 A M em ber o f th e T e m ic G ro u p Adaptive Low-Side Power MOSFET Driver Features • 500-V Interface to High-Side Driver • Internal Oscillator for High-Side Charge Pump • Internal 500-V Bootstrap Diode • dv/dt and di/dt Control
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Si9901
Si9911/9914
AA07502--
Si9901
Si9901BJ
SI9911
S1-99
S19901
SI99-01
si9914
Si9911/SI9914
M/PD-500
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Abstract: No abstract text available
Text: s e M IK R D n SKiiP 192 GD 170 - 371 WT Absolute Maximum Ratings Symbol | Conditions 1> Values Units 1700 1200 150 300 - 5 5 . . . + 150 4000 150 300 1450 10,5 ICM T j 3 Visoi4> If I fm Ifsm l2t Diode) Driver Vsi VS291 dv/dt Stabilized power supply Nonstabilized power supply
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613bb71
QQ05Q01
ai3bb71
0GQ50G3
00G5D04
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