j378
Abstract: duroid 6010 breakdown voltage 2731-100M 100 watts transistor s-band transistor d1 391 J382 transistor frequency 30GHz gain 20 dB
Text: 2731-100MR1 2731-100M 100 Watts, 36 Volts, 250µs, 10% Radar 2700-3100 MHz CASE OUTLINE 55KS-1 Common Base GENERAL DESCRIPTION The 2731-100M is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 250µs pulse
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2731-100MR1
2731-100M
55KS-1
2731-100M
2200uF
j378
duroid 6010 breakdown voltage
100 watts transistor s-band
transistor d1 391
J382
transistor frequency 30GHz gain 20 dB
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T491D476M020AS
Abstract: TRANSISTOR SMD 2X K transistor j127 BLA0912-250 T491D226M020AS
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA0912-250 Avionics LDMOS transistor Preliminary specification 2003 Oct 24 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA0912-250 PINNING - SOT502A FEATURES • High power gain
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M3D379
BLA0912-250
OT502A
SCA74
613524/06/pp11
T491D476M020AS
TRANSISTOR SMD 2X K
transistor j127
BLA0912-250
T491D226M020AS
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Untitled
Abstract: No abstract text available
Text: BLL1214-250R LDMOS L-band radar power transistor Rev. 01 — 4 February 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package SOT502A with a ceramic cap. The common source is connected to the
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BLL1214-250R
OT502A)
BLL1214-250R
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200B
Abstract: flange table
Text: BLL1214-250R LDMOS L-band radar power transistor Rev. 01 — 4 February 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package SOT502A with a ceramic cap. The common source is connected to the
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BLL1214-250R
OT502A)
BLL1214-250R
200B
flange table
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 PINNING - SOT502A
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M3D379
BLL1214-250
OT502A
SCA75
613524/03/pp10
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ATC200B
Abstract: BLL1214-250 MLD861
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 FEATURES
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M3D379
BLL1214-250
OT502A
SCA75
613524/03/pp10
ATC200B
BLL1214-250
MLD861
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200WN
Abstract: No abstract text available
Text: BLA6G1011-200R Power LDMOS transistor Rev. 01 — 17 June 2009 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
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BLA6G1011-200R
BLA6G1011-200R
200WN
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nxp TRANSISTOR SMD 13
Abstract: No abstract text available
Text: BLA6G1011-200R Power LDMOS transistor Rev. 02 — 1 March 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
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BLA6G1011-200R
BLA6G1011-200R
nxp TRANSISTOR SMD 13
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NV SMD TRANSISTOR
Abstract: philips resistor TRANSISTOR L2 BLA0912-250 T491D226M020AS T491D476M020AS TANTALUM SMD CAPACITOR JTIDS smd transistor w1 gp3511
Text: BLA0912-250 Avionics LDMOS transistor Rev. 02 — 22 July 2004 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the
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BLA0912-250
OT502A
NV SMD TRANSISTOR
philips resistor
TRANSISTOR L2
BLA0912-250
T491D226M020AS
T491D476M020AS
TANTALUM SMD CAPACITOR
JTIDS
smd transistor w1
gp3511
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ROGERS DUROID
Abstract: No abstract text available
Text: BLA6G1011-200R Power LDMOS transistor Rev. 3 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
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BLA6G1011-200R
ROGERS DUROID
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Untitled
Abstract: No abstract text available
Text: BLA0912-250R Avionics LDMOS power transistor Rev. 3 — 1 December 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the
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BLA0912-250R
OT502A
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250 B 340 smd Transistor
Abstract: smd JH transistor BLA0912-250 T491D476M020AS
Text: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the
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BLA0912-250
OT502A
103itions
250 B 340 smd Transistor
smd JH transistor
BLA0912-250
T491D476M020AS
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T491D226M020AS
Abstract: T491D476M020AS smd JH transistor
Text: BLA0912-250R Avionics LDMOS power transistor Rev. 01 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the
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BLA0912-250R
OT502A
BLA0912-250R
T491D226M020AS
T491D476M020AS
smd JH transistor
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Untitled
Abstract: No abstract text available
Text: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the
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BLA0912-250
OT502A
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smd JH transistor
Abstract: 250 B 340 smd Transistor T491D476M020AS BLA0912-250R J2 JH
Text: BLA0912-250R Avionics LDMOS power transistor Rev. 3 — 1 December 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the
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BLA0912-250R
OT502A
smd JH transistor
250 B 340 smd Transistor
T491D476M020AS
BLA0912-250R
J2 JH
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Untitled
Abstract: No abstract text available
Text: BLA6G1011-200R; BLA6G1011L S -200RG Power LDMOS transistor Rev. 4 — 9 November 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information
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BLA6G1011-200R;
BLA6G1011L
-200RG
OT502A
OT502C
OT502D
BLA6G1011-200R
L-200RG
LS-200RG
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Abstract: No abstract text available
Text: BLA6G1011-200R; BLA6G1011L S -200RG Power LDMOS transistor Rev. 4 — 9 November 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information
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BLA6G1011-200R;
BLA6G1011L
-200RG
OT502A
OT502C
OT502D
BLA6G1011-200R
L-200RG
LS-200RG
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Abstract: No abstract text available
Text: BLL6G1214L-250 LDMOS L-band radar power transistor Rev. 1 — 16 February 2012 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information
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BLL6G1214L-250
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transistor aaa
Abstract: No abstract text available
Text: BLL6G1214L-250 LDMOS L-band radar power transistor Rev. 1 — 16 February 2012 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information
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BLL6G1214L-250
transistor aaa
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Untitled
Abstract: No abstract text available
Text: BLL6G1214L-250; BLL6G1214LS-250 LDMOS L-band radar power transistor Rev. 2 — 24 June 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1.
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BLL6G1214L-250;
BLL6G1214LS-250
BLL6G1214L-250
1214LS-250
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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