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    DUAL GATE MOSFET GRAPHS Search Results

    DUAL GATE MOSFET GRAPHS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    DUAL GATE MOSFET GRAPHS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    95160

    Abstract: MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs TMF3201J Dual-Gate Mosfet 9935 mosfet 95160 3
    Text: Preliminary Specification TMF3201J Dual N-Channel Dual-Gate MOSFET □ Description SOT363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with


    Original     		PDF TMF3201J OT363 TMF3201J OT363 95160 MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs Dual-Gate Mosfet 9935 mosfet 95160 3

    Untitled

    Abstract: No abstract text available
    Text: TMF3201J Semiconductor Dual Gate MOSFET □ Description SOT-363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It consists of two equal dual gate MOSFET amplifiers with shared


    Original     		PDF TMF3201J OT-363 TMF3201J OT-363

    MARKING CODE Zi sot363

    Abstract: TMF3201J ZI Marking Code transistor MOSFET 9935
    Text: TMF3201J Semiconductor Dual Gate MOSFET □ Description The TMF3201J is an N-channel enhancement type, dual- SOT-363 insulated gate, field-effect transistor that utilizes MOS Unit in mm construction. It consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads. The source


    Original     		PDF TMF3201J TMF3201J OT-363 OT-363 KSD-A5S001-000 MARKING CODE Zi sot363 ZI Marking Code transistor MOSFET 9935

    br 8764

    Abstract: 13-AMPLIFIER BF1210
    Text: BF1210 Dual N-channel dual gate MOSFET Rev. 01 — 25 October 2006 Product data sheet 1. Product profile 1.1 General description The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable


    Original     		PDF BF1210 BF1210 OT363 br 8764 13-AMPLIFIER

    br 8764

    Abstract: marking 822 sot363 6710 mosfet sp 9753 BF1214 sc 6700 N-CHANNEL dual gate ultra low noise vhf AMPLIFIER
    Text: BF1214 Dual N-channel dual gate MOSFET Rev. 01 — 30 October 2007 Product data sheet 1. Product profile 1.1 General description The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable


    Original     		PDF BF1214 BF1214 OT363 br 8764 marking 822 sot363 6710 mosfet sp 9753 sc 6700 N-CHANNEL dual gate ultra low noise vhf AMPLIFIER

    Untitled

    Abstract: No abstract text available
    Text: BF1216 Dual N-channel dual gate MOSFET Rev. 01 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization


    Original     		PDF BF1216 BF1216 OT363

    bf1216

    Abstract: Dual Gate MOSFET graphs dual gate mosfet in vhf amplifier SC-88 M5t transistor M5W
    Text: BF1216 Dual N-channel dual gate MOSFET Rev. 01 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization


    Original     		PDF BF1216 BF1216 OT363 Dual Gate MOSFET graphs dual gate mosfet in vhf amplifier SC-88 M5t transistor M5W

    K 2611 MOSFET

    Abstract: K 2611 MOSFET VOLTAGE RATING mosFET K 2611 9439 2n BF1206F Shortform Data and Cross References Mosfet UHF transistor handbook
    Text: BF1206F Dual N-channel dual gate MOSFET Rev. 01 — 30 January 2006 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current


    Original     		PDF BF1206F BF1206F OT666 K 2611 MOSFET K 2611 MOSFET VOLTAGE RATING mosFET K 2611 9439 2n Shortform Data and Cross References Mosfet UHF transistor handbook

    Untitled

    Abstract: No abstract text available
    Text: BF1207 Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current


    Original     		PDF BF1207 BF1207 OT363

    BF1207

    Abstract: No abstract text available
    Text: BF1207 Dual N-channel dual gate MOSFET Rev. 01 — 28 July 2005 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current


    Original     		PDF BF1207 BF1207 OT363 MSC895

    K 2611 MOSFET

    Abstract: mosFET K 2611 K 2611 MOSFET VOLTAGE RATING 2N 8565
    Text: SO T6 66 BF1206F Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current


    Original     		PDF BF1206F BF1206F OT666 K 2611 MOSFET mosFET K 2611 K 2611 MOSFET VOLTAGE RATING 2N 8565

    hg1b

    Abstract: marking 822 sot363
    Text: BF1207 Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current


    Original     		PDF BF1207 BF1207 OT363 hg1b marking 822 sot363

    Untitled

    Abstract: No abstract text available
    Text: SO T6 66 BF1206F Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current


    Original     		PDF BF1206F BF1206F OT666

    8203 dual mosfet

    Abstract: MCP14700-E/MF diagram of IC 8203 MCP14700 PIC32 PICC-18 dual mosfet 3X3 package DSAE003323
    Text: MCP14700 Dual Input Synchronous MOSFET Driver Features General Description • Independent PWM Input Control for High-Side and Low-Side Gate Drive • Input Logic Level Threshold 3.0V TTL Compatible • Dual Output MOSFET Drive for Synchronous Applications


    Original     		PDF MCP14700 MCP14700 DS22201A-page 8203 dual mosfet MCP14700-E/MF diagram of IC 8203 PIC32 PICC-18 dual mosfet 3X3 package DSAE003323

    MCP87000

    Abstract: motor control code c pwm with pic
    Text: MCP14700 Dual Input Synchronous MOSFET Driver Features: General Description: • Ideally suited to drive low Figure-of-Merit FOM MOSFETs such as Microchip’s MCP87000 MOSFET family • Independent PWM Input Control for High-Side and Low-Side Gate Drive


    Original     		PDF MCP14700 MCP87000 MCP14700 synchr778-366 DS22201B-page motor control code c pwm with pic

    KMB7D0DN40QA

    Abstract: KMB7D0DN
    Text: SEMICONDUCTOR KMB7D0DN40QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This planer stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.


    Original     		PDF KMB7D0DN40QA KMB7D0DN40QA KMB7D0DN

    KMB6D0DN30QA

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KMB6D0DN30QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This planer stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.


    Original     		PDF KMB6D0DN30QA 100ms KMB6D0DN30QA

    Untitled

    Abstract: No abstract text available
    Text: CSD75207W15 www.ti.com SLPS418 – JUNE 2013 Dual P-Channel NexFET Power MOSFET Check for Samples: CSD75207W15 FEATURES 1 • • • • • • • Dual P-Ch MOSFETs Common Source Configuration Small Footprint 1.5-mm x 1.5-mm Gate-Source Voltage Clamp


    Original     		PDF CSD75207W15 SLPS418 JESD22-A114 CSD75207W15

    Untitled

    Abstract: No abstract text available
    Text: CSD75207W15 www.ti.com SLPS418 – JUNE 2013 Dual P-Channel NexFET Power MOSFET Check for Samples: CSD75207W15 FEATURES 1 • • • • • • • Dual P-Ch MOSFETs Common Source Configuration Small Footprint 1.5-mm x 1.5-mm Gate-Source Voltage Clamp


    Original     		PDF CSD75207W15 SLPS418 JESD22-A114

    p0109

    Abstract: No abstract text available
    Text: CSD75207W15 www.ti.com SLPS418 – JUNE 2013 Dual P-Channel NexFET Power MOSFET Check for Samples: CSD75207W15 FEATURES 1 • • • • • • • Dual P-Ch MOSFETs Common Source Configuration Small Footprint 1.5-mm x 1.5-mm Gate-Source Voltage Clamp


    Original     		PDF CSD75207W15 SLPS418 JESD22-A114 CSD75207W15 p0109

    1/AN6069

    Abstract: No abstract text available
    Text: FAN3268 2 A Low-Voltage PMOS-NMOS Bridge Driver Features Description • • The FAN3268 dual 2 A gate driver is optimized to drive a high-side P-channel MOSFET and a low-side Nchannel MOSFET in motor control applications operating from a voltage rail up to 18 V. The driver has


    Original     		PDF FAN3268 FAN3268 1/AN6069

    LTC3810H-5

    Abstract: gate drivers ic LTC3810-5 LTC3810E-5 LTC3810I-5 MBR1100 Si7450DP ZXMN10A07F LTC3810HUH-5 LTC3810
    Text: LTC3810-5 60V Current Mode Synchronous Switching Regulator Controller Description Features High Voltage Operation: Up to 60V n Large 1Ω Gate Drivers n No Current Sense Resistor Required n Dual N-Channel MOSFET Synchronous Drive n Extremely Fast Transient Response


    Original     		PDF LTC3810-5 100ns TSSOP-16E LTC3703 100kHz 600kHz, 93VIN, SSOP-16, SSOP-28 LT3845A LTC3810H-5 gate drivers ic LTC3810-5 LTC3810E-5 LTC3810I-5 MBR1100 Si7450DP ZXMN10A07F LTC3810HUH-5 LTC3810

    MOSFET 7121

    Abstract: 9935 mosfet
    Text: BF1217WR N-channel dual gate MOSFET Rev. 1 — 3 August 2010 Product data sheet 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive


    Original     		PDF BF1217WR BF1217WR OT343R MOSFET 7121 9935 mosfet

    Untitled

    Abstract: No abstract text available
    Text: BF1217WR N-channel dual gate MOSFET Rev. 2 — 20 June 2011 Product data sheet 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive


    Original     		PDF BF1217WR BF1217WR OT343R