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    DT3 DUAL TRANSISTOR Search Results

    DT3 DUAL TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DT3 DUAL TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Low-voltage frequency synthesizer for radio telephones UMA1019M The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V supply


    Original     		PDF UMA1019M

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Low-voltage dual frequency synthesizer for radio telephones UMA1020M The principal synthesizer operates at RF input frequencies up to 2.4 GHz the auxiliary synthesizer operates at 300 MHz. The auxiliary loop is intended for the first IF or to


    Original     		PDF UMA1020M

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Low-voltage frequency synthesizer for radio telephones UMA1017M The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V supply


    Original     		PDF UMA1017M

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Low-power dual frequency synthesizer for radio communications UMA1015M FEATURES GENERAL DESCRIPTION • Two fully programmable RF dividers up to 1.1 GHz The UMA1015M is a low-power dual frequency synthesizer for radio communications which operates in


    Original     		PDF UMA1015M UMA1015M

    Untitled

    Abstract: No abstract text available
    Text: O b f*c tlv * pacification P h ilip * Sem iconductor* RF Com m unication* Product* Low-power dual frequency synthesizer for radio communications UMA1015M FEATURES GENERAL DESCRIPTION • Two fully programmable RF dividers up to 1.1 GHz The UMA1015M is a low-power dual frequency


    OCR Scan     		PDF UMA1015M UMA1015M

    UAA2072M

    Abstract: UMA1017M
    Text: NAPC/PHILIPS SEMICOND b?E D • bbS3ci24 □ □a'JSBM 54T « S I C H Philip« Semiconductors RF Communication« Product« Objective specification Low-voltage frequency synthesizer for radiotelephones GENERAL DESCRIPTION FEATURES The BiCMOS device integrates prescaler,


    OCR Scan     		PDF UMA1017M UAA2072M UMA1017M

    QFP Package 128 lead .5mm

    Abstract: Dt3 dual transistor QFP 128 lead .5mm CXA1474M CXA1474N for Operational Amplifier
    Text: _ SONY* CXA1474M/N Low Current Consumption FM IF Amplifier for Pagers Description The CXA1474M/N is a low current consumption FM IF amplifiers which employ the newest bipolar process. It is suitable for such sets as Japan single conversion pagers which require low current consumption.


    OCR Scan     		PDF CXA1474M/N CXA1474M/N 16-pin 50MIL) 127mm 0005bb7 QFP Package 128 lead .5mm Dt3 dual transistor QFP 128 lead .5mm CXA1474M CXA1474N for Operational Amplifier

    GT 1081

    Abstract: AM13 UAA2072M UMA1018M
    Text: NAPC/PHILIPS SEMICOND bbS3T5M Düa'ïsm 401 m$IC3 b7E D Philip* Semiconductor* RF Communication« Product* Obfectiv« *p*ctflc*tlon Low-voltage dual frequency synthesizer for radio telephones FEATURES UMA1018M supplies. The principal synthesizer operates at VCO input


    OCR Scan     		PDF bti53TE4 UMA1018M GT 1081 AM13 UAA2072M UMA1018M

    02 nJ 01511

    Abstract: HKA710 UMA1015M
    Text: Preliminary specification Philips Semiconductors Low-power dual frequency synthesizer for radio communications UMA1015M FEATURES GENERAL DESCRIPTION • Two fully programmable RF dividers up to 1.1 GHz The UMA1015M is a low-power dual frequency synthesizer for radio communications which operates in


    OCR Scan     		PDF UMA1015M UMA1015M 711005b 000433t. 02 nJ 01511 HKA710

    crb 455

    Abstract: SSOP16 SSOP20 UMA1015AM external charge pump on fpc application UMA1015AM
    Text: Philips Semiconductors Preliminary specification Low-power dual frequency synthesizer for radio communications FEATURES UMA1015AM GENERAL DESCRIPTION Two fully programmable RF dividers up to 1.1 GHz The UMA1015AM is a low-power dual frequency synthesizer for radio communications which operates in


    OCR Scan     		PDF UMA1015AM crb 455 SSOP16 SSOP20 UMA1015AM external charge pump on fpc application UMA1015AM

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Low-voltage frequency synthesizer for radio telephones UMA1019M The device is designed to operate from 3 NiCd cells, In pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V supply


    OCR Scan     		PDF UMA1019M

    UKA897

    Abstract: UMA1019M
    Text: Preliminary specification Philips Semiconductors Low-voltage frequency synthesizer for radio telephones operate from 3 NiCd cells, in pocket phones, with low current mid nominal 5 V supplies. FEATURES • Low current from 3 V supply • Fully programmable RF divider


    OCR Scan     		PDF UMA1019M UMA1019M 7110fl2b 00S437T 7110fiat, UKA897

    GT 1083

    Abstract: AR10 UAA2072M UMA1018M UMA1020M UMAI020M
    Text: N A P C /P H IL IP S S E M IC O N D b?E D • b b 5 3 1 2if G G B IS S B 1TG Philip* Semiconductor« RF Communication« Product* « S I C 3 Objective *p«elflc«tlon Low-voltage dual frequency synthesizer for radio telephones_ FEATURES UMA1020M pocket phones, with low current as well as nominal 5 V


    OCR Scan     		PDF bbS315M UMA1020M UMAI020M GT 1083 AR10 UAA2072M UMA1018M UMA1020M UMAI020M

    TCXO KSS

    Abstract: 3 phase principal divider phase logic loop UKA902 UMA1020AM low-voltage digital phase detector
    Text: P hilips Sem iconductors Preliminary specification Low-voltage dual frequency synthesizer for radio telephones UMA1020AM FEATURES The principal synthesizer operates at VCO input frequencies up to 1.7 GHz the auxiliary synthesizer operates at 300 MHz. The auxiliary loop is intended for the


    OCR Scan     		PDF UMA1020AM 7110fl5t UMA1020AM A1020AM 110aat. TCXO KSS 3 phase principal divider phase logic loop UKA902 low-voltage digital phase detector

    1474M

    Abstract: Dt3 dual transistor 4H51
    Text: _ SONY* CXA1474M/N Low Current Consumption FM IF Amplifier for Pagers Description T h e C X A 1474M /N is a low current consumption FM IF amplifiers which employ the newest bipolar process. C X A 1474M CX A 1474N 16 pin S O P Plastic 16 pin V S O P (Plastic)


    OCR Scan     		PDF CXA1474M/N 1474M 1474N 16-pin 70MIL) 778mm 50MIL) Dt3 dual transistor 4H51

    TCXO KSS

    Abstract: UAA2072M UMA1017M flM337
    Text: Preliminary specification Philips Semiconductors Low-voltage frequency synthesizer for radio telephones UMA1017M operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V supply The synthesizer operates at VCO input frequencies up to


    OCR Scan     		PDF UMA1017M UMA1017M 7110flab TCXO KSS UAA2072M flM337

    1019AM

    Abstract: UMA1019AM
    Text: Philips Sem iconductors Prelim inary specification Low-voltage frequency synthesizer for radio telephones FEATURES UMA1019AM operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. • Low current from 3 V supply The synthesizer operates at VCO input frequencies up to


    OCR Scan     		PDF UMA1019AM UMA1019AM 7110B2ti 1019AM

    Untitled

    Abstract: No abstract text available
    Text: HCC4076B HCF4076B SGS-THOMSON * t7 M i © I I L IO 'n 'i© l i ! l D S i 4 BIT D TYPE REGISTERS • THREE STATE OUTPUTS . INPUT DISABLE WITHOUT GATING THE CLOCK . GATED OUTPUT CONTROL LINES FOR EN­ ABLING OR DISABLING THE OUTPUTS ■ QUIESCENT CURRENT SPECIHED TO 20V


    OCR Scan     		PDF HCC4076B HCF4076B 100nA HCC4076BF HCF4076BM1 HCF4076BEY HCF4076BC1 P013H HCC/HCF4076B

    AM13

    Abstract: AR10 OM5156M
    Text: INTEGRATED CIRCUITS S H U T OM5156M Low-voltage dual frequency synthesizer for radio telephones Preliminary specification File under Integrated Circuits, IC03 Philips Semiconductors 7 1 1 0 fl2 b DCHObBb b b 4 1995 Jun 27 PHILIPS Philips Semiconductors Preliminary specification


    OCR Scan     		PDF OM5156M 7110fl2b 711005t. AM13 AR10 OM5156M

    TGAM 1

    Abstract: 2000w power amplifier circuit diagram CRYSTAL ITT TCXO 4 5 MHZ UMA10 TCXO 10 MHz ITT AM13 UMA1020M TCXO ITT
    Text: Philips Semiconductors Preliminary specification Low-voltage dual frequency synthesizer for radio telephones UMA1020M FEA TU R ES The principal synthesizer operates at VCO input frequencies up to 2.4 GHz the auxiliary synthesizer operates at 300 MHz. The auxiliary loop is intended for the


    OCR Scan     		PDF UMA1020M MKA602 UMA1020M 7110flEti TGAM 1 2000w power amplifier circuit diagram CRYSTAL ITT TCXO 4 5 MHZ UMA10 TCXO 10 MHz ITT AM13 TCXO ITT

    AM13

    Abstract: UMA1020M
    Text: INTEGRATED CIRCUITS m E E i UMA1020M Low-voltage dual frequency synthesizer for radio telephones Product specification Supersedes data of November 1994 File under Integrated Circuits, IC03 PHILIPS Philips Sem iconductors 7110A2b 00^0704 1995 Jun 15 T35 Philips Semiconductors


    OCR Scan     		PDF UMA1020M 7110fl2b GGTG71fl AM13 UMA1020M

    crb 455

    Abstract: Voltage Doubler UMA1015M UMA1015
    Text: PÂTÂ @ y iI T UMA1015M Low-power dual frequency synthesizer for radio communications Product specification Supersedes data of October 1994 File under Integrated Circuits, IC03 Philips Semiconductors 1995 Jun22 PHILIPS Philips Semiconductors Product specification


    OCR Scan     		PDF UMA1015M 7110flSb 711002b Q0T1144 crb 455 Voltage Doubler UMA1015M UMA1015

    metal detector diagram PI

    Abstract: AM13 UAA2072M UMA1018M UAA2072
    Text: INTEGRATED CIRCUITS UMA1018M Low-voltage dual frequency synthesizer for radio telephones Product specification Supersedes data of November 1994 File under Integrated Circuits, IC03 Philips Semiconductors 7110fl2fe 0 C H1 173 1995 Jun 27 PHILIPS Philips Semiconductors


    OCR Scan     		PDF UMA1018M 711002b 0CH1173 7110fl2b metal detector diagram PI AM13 UAA2072M UMA1018M UAA2072

    UMA1015AM

    Abstract: rf power detector voltage doubler
    Text: Philips Semiconductors Objective specification Low-power dual frequency synthesizer for radio communications U M A1015AM FEATURES GENERAL DESCRIPTION • Two fully programmable RF dividers up to 1.1 GHz The UMA1015AM is a low-power dual frequency synthesizer for radio communications which operates in


    OCR Scan     		PDF UMA1015AM 711DB2fc. UMA1015AM rf power detector voltage doubler