gigabyte MOTHERBOARD SERVICE MANUAL
Abstract: PC MOTHERBOARD SERVICE MANUAL intel 865 PC intel MOTHERBOARD SERVICE MANUAL 865 intel d915gav motherboard manual IXP2350 GA-8I945GTE discovery 300 visiowave intel 865 MOTHERBOARD problem intel ixp2350 d915gav
Text: Solutions Guide Intel Digital Security Surveillance Part 2 of a Series Intel Digital Security Surveillance Ecosystem Guide ® www.intel.com/info/dss Digital Security Surveillance DSS has never been more vital. To meet the growing worldwide demand, DSS vendors require
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1005/DLC/OCG/PP/2K
307055-002US
gigabyte MOTHERBOARD SERVICE MANUAL
PC MOTHERBOARD SERVICE MANUAL intel 865
PC intel MOTHERBOARD SERVICE MANUAL 865
intel d915gav motherboard manual
IXP2350
GA-8I945GTE
discovery 300 visiowave
intel 865 MOTHERBOARD problem
intel ixp2350
d915gav
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Untitled
Abstract: No abstract text available
Text: DSS 2x160-0035/45A IFAVM = 2x160 A VRRM = 35 - 45 V VF = 0.73 V Power Schottky Rectifier Non isolated Preliminary Data VRSM VRRM V V 35 45 35 45 Symbol A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-0035A DSS 2x160-0045A A1 Test Conditions Anode 1 Maximum Ratings
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2x160-0035/45A
2x160
OT-227
2x160-0035A
2x160-0045A
DSS2x160-0045A
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BV45
Abstract: No abstract text available
Text: DSS 2x160-0045A IFAVM = 2x160 A VRRM = 45 V VF = 0.73 V Power Schottky Rectifier Non isolated Preliminary Data VRSM VRRM V V 45 45 A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-0045A A1 Anode 1 Common cathode Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM
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2x160-0045A
2x160
OT-227
Weight50
DSS2x160-0045A
BV45
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2SK2803
Abstract: FM20
Text: 2SK2803 Absolute Maximum Ratings External dimensions 1 . FM20 Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 450 V V(BR) DSS VGSS ±30 V ID ±3 A ±12 ID (pulse) *1 PD EAS *2 min 450 Ratings typ I GSS I DSS (Ta = 25ºC) max Unit
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2SK2803
2SK2803
FM20
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Untitled
Abstract: No abstract text available
Text: DSS 2x160-0045A IFAVM = 2x160 A VRRM = 45 V VF = 0.73 V Power Schottky Rectifier Non isolated Preliminary Data VRSM VRRM V V 45 45 miniBLOC, SOT-227 B A2 Type Anode 2 DSS 2x160-0045A A1 Anode 1 Common cathode Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM
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2x160-0045A
2x160
OT-227
DSS2x160-0045A
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DIODE F10 033 106
Abstract: DSS 2X160-01A V100A2 DIODE F10
Text: DSS 2x160-01A IFAVM = 2x160 A VRRM = 100 V VF = 0.80 V Power Schottky Rectifier Non isolated Preliminary Data VRSM VRRM V V 100 100 A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-01A A1 Anode 1 Common cathode Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM
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2x160-01A
2x160
OT-227
DSS2x160-01A
DIODE F10 033 106
DSS 2X160-01A
V100A2
DIODE F10
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2SK2710
Abstract: No abstract text available
Text: 2SK2710 External dimensions 2 . FM100 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 600 V V(BR) DSS I D = 100µA, VGS = 0V nA VGS = ±30V I DSS 100 µA VDS = 600V, VGS = 0V A VTH 2.0 3.0 ±48 A Re (yfs)
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2SK2710
FM100
2SK2710
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Untitled
Abstract: No abstract text available
Text: DSS 2x160-01A IFAVM = 2x160 A VRRM = 100 V VF = 0.81 V Power Schottky Rectifier Non isolated VRSM VRRM V V 100 100 A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-01A A1 Anode 1 Common cathode Symbol Conditions IFRMS IFAVM IFAVM TC = 95°C; rectangular, d = 0.5
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2x160-01A
2x160
OT-227
DSS2x160-01A
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Untitled
Abstract: No abstract text available
Text: DSS 2x160-01A IFAVM = 2x160 A VRRM = 100 V VF = 0.80 V Power Schottky Rectifier Non isolated Preliminary Data A2 VRSM VRRM V V 100 100 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-01A A1 Symbol Test Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 95°C; rectangular, d = 0.5
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2x160-01A
2x160
OT-227
DSS2x160-01A
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2x160-01A
Abstract: 2x160 2X16001A dss2x160-01a DSS2*160 DSS 2X160-01A DSS 2*160-01A
Text: DSS 2x160-01A IFAVM = 2x160 A VRRM = 100 V VF = 0.81 V Power Schottky Rectifier Non isolated VRSM VRRM V V 100 100 A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-01A A1 Anode 1 Common cathode Symbol Conditions IFRMS IFAVM IFAVM TC = 95°C; rectangular, d = 0.5
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2x160-01A
2x160
OT-227
DSS2x160-01A
2x160-01A
2X16001A
dss2x160-01a
DSS2*160
DSS 2X160-01A
DSS 2*160-01A
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2X16001A
Abstract: No abstract text available
Text: DSS 2x160-01A IFAVM = 2x160 A VRRM = 100 V VF = 0.80 V Power Schottky Rectifier Non isolated VRSM VRRM V V 100 100 A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-01A A1 Anode 1 Common cathode Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 95°C; rectangular, d = 0.5
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2x160-01A
2x160
OT-227
DSS2x160-01A
2X16001A
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Untitled
Abstract: No abstract text available
Text: DSS 2x160-0045A IFAVM = 2x160 A VRRM = 45 V VF = 0.73 V Power Schottky Rectifier Non isolated VRSM VRRM V V 45 45 A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-0045A A1 Anode 1 Common cathode Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 100°C; rectangular, d = 0.5
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2x160-0045A
2x160
OT-227
DSS2x160-0045A
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2x160
Abstract: 2x160-0045A
Text: DSS 2x160-0045A IFAVM = 2x160 A VRRM = 45 V VF = 0.72 V Power Schottky Rectifier Non isolated VRSM VRRM V V 45 45 A2 Type SOT-227 B, miniBLOC Anode 2 DSS 2x160-0045A A1 Common cathode Symbol Conditions IFRMS IFAVM IFAVM TC = 100°C; rectangular, d = 0.5 TC = 100°C; rectangular, d = 0.5; per device
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2x160-0045A
2x160
OT-227
DSS2x160-0045A
2x160-0045A
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Si21xx
Abstract: No abstract text available
Text: S i 2 1 0 7 / 0 8 / 0 9/10 SATELLITE RECEIVER FOR DVB-S/DSS Features The Si2107/08/09/10 are a family of pin-compatible complete front end solutions for DSS and DVB-S digital satellite reception. The IC family incorporates a tuner, demodulator, and LNB controller into a single device resulting in a significant
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Si2109/10
Si2107/08/09/10
Si2108/10
Si21xx
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Untitled
Abstract: No abstract text available
Text: FP31QF 2 – Watt HFET Product Information Applications • RFID: HF, UHF, microwave • Readers Saturated Drain Current, I dss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain Maximum Stable Gain
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FP31QF
28-pin
FP31QF
WJ1-4401
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Untitled
Abstract: No abstract text available
Text: FP31QF 2 – Watt HFET Product Information • RFID: HF, UHF, microwave • Readers • • • Industrial Portable Handheld Units Min Typ Saturated Drain Current, I dss Transconductance, Gm Pinch Off Voltage, Vp 1 Thermal Resistance Junction Temperature (2)
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FP31QF
28-pin
FP31QF
JESD22-A114
JESD22-C101
J-STD-020B
WJ1-4401
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DSS 2X160-01A
Abstract: No abstract text available
Text: DSS 2x160-01 A Power Schottky Rectifier •fa v m V rrM Non isolated VF Preliminary Data 2x160 A 100 V 0.80 V 9 f£ . v’ RSM VRRM V V 100 100 Symbol Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-01A Test Conditions Anode 1 Maximum Ratings Common cathode ^FRMS
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2x160-01
2x160-01A
2x160
OT-227
D4-69
2x160-01A
D4-70
DSS 2X160-01A
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Untitled
Abstract: No abstract text available
Text: □IXYS Power Schottky Rectifier 2x160 A 3 5 -45 V 0.73 V I fa v m V Non isolated rrM VF Preliminary Data v RSM v RRM V V 35 45 35 45 Type miniBLOC, SOT-227 B o A DSS 2X160-0035A DSS 2x160-0045A A1 Anode 2 Ì N/ Symbol Test Conditions Anode 1 Maximum Ratings
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2x160
OT-227
2X160-0035A
2x160-0045A
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D449
Abstract: No abstract text available
Text: Power Schottky Rectifier •FAVM ^R R M Non isolated vP 2x160 A 35 - 45 V 0.73 V Preliminary Data v ASM v*R R M V V 35 45 35 45 Symbol A2 Type £ miniBLOC, SOT-227 B Anode 2 DSS 2x160-0035A DSS 2x160-0045 A ■ f A1 Test Conditions Anode 1 Maximum Ratings
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2x160
OT-227
2x160-0035A
2x160-0045
D4-49
35/45A
D449
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS50KM-2 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dim ensions in mm 10 ± 0.3 2 .8 1 0 .2 1 0 V D R IV E V dss . 1 0 0 V rDS ON ( 5 m i2
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FS50KM-2
55mii
105ns
O-220FN
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DIODE D3S 5D
Abstract: No abstract text available
Text: PD -9.1674 International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A
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IRFIZ34E
DIODE D3S 5D
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DIODE D3S 5D
Abstract: diode D3s IRFZ3
Text: PD - 9.1674A International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A
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IRFIZ34E
DIODE D3S 5D
diode D3s
IRFZ3
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of SD-50 Diode
Abstract: No abstract text available
Text: SFP9624 Advanced Power MOSFET FEATURES B V dss = -2 5 0 V 2 . 4 Î2 • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10
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SFP9624
-250V
O-220
of SD-50 Diode
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FZ44N
Abstract: IRFIZ44N equivalent fz44
Text: PD - 9.1403A International IÖR Rectifier IRFIZ44N HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 55 V FÍDS on = 0 .0 2 4 Í 2 lD = 3 1 A
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IRFIZ44N
FZ44N
IRFIZ44N equivalent
fz44
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