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    APT2012SECK

    Abstract: No abstract text available
    Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: APT2012SECK Super Bright Orange Features Description z 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Super Bright Orange device is made with DH InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip.


    Original
    PDF APT2012SECK 2000PCS spec007 DSAD0946 MAY/05/2007 APT2012SECK

    APT2012SECK

    Abstract: No abstract text available
    Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: APT2012SECK Super Bright Orange Features Description z 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


    Original
    PDF APT2012SECK 2000pcs si2010 DSAD0946 DEC/22/2010 APT2012SECK

    APT2012SECK

    Abstract: No abstract text available
    Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: APT2012SECK Super Bright Orange Features Description z2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Orange device is made with AlGaInP on zLow power consumption. GaAs substrate light emitting diode chip.


    Original
    PDF APT2012SECK 2000pcs MAR/25/2009 DSAD0946 APT2012SECK

    Untitled

    Abstract: No abstract text available
    Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: APT2012SECK Super Bright Orange Features Description z 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


    Original
    PDF APT2012SECK 2000pcs moun0946 DEC/18/2011 APT2012SECK DSAD0946

    Untitled

    Abstract: No abstract text available
    Text: 2.0x1.25mm SMD CHIP LED LAMP APT2012SECK SUPER BRIGHT ORANGE Description Features 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Super Bright Orange source color devices are made LOW POWER CONSUMPTION. with DH InGaAlP on GaAs substrate Light Emitting Diode. WIDE VIEWING ANGLE.


    Original
    PDF APT2012SECK 2000PCS DSAD0946 MAR/19/2005