DFM600XXM45-F000
Abstract: DS5915-1
Text: DFM600XXM45-F000 Fast Recovery Diode Module DS5915-1.0 June 2007 LN25309 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1200A Rating
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DFM600XXM45-F000
DS5915-1
LN25309)
DFM600XXM45-F000
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DFM400NXM33-F000
Abstract: 3300V FRD
Text: DFM400NXM33-F000 Fast Recovery Diode Module DS5910-1.0 March 2007 LN25214 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 800A Rating
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DFM400NXM33-F000
DS5910-1
LN25214)
DFM400NXM33-F000
3300V FRD
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Untitled
Abstract: No abstract text available
Text: DFM1200EXM18-A000 Fast Recovery Diode Module Replaces DS5913-1.0 DS5913-2 April 2011 LN28313 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base with AlN Substrates
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DFM1200EXM18-A000
DS5913-1
DS5913-2
LN28313)
DFM1200EXM18-A000
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DFM1200NXM33-F000
Abstract: DFM1200NXM33-F
Text: DFM1200NXM33-F000 Fast Recovery Diode Module Replaces DS5912-1.0 DS5912-2 December 2010 LN27788 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates
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DFM1200NXM33-F000
DS5912-1
DS5912-2
LN27788)
DFM1200NXM33-F000
DFM1200NXM33-F
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DFM1200NXM33-F000
Abstract: 100FITS
Text: DFM1200NXM33-F000 Fast Recovery Diode Module DS5912-1.0 March 2007 LN25215 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 2400A Rating
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DFM1200NXM33-F000
DS5912-1
LN25215)
DFM1200NXM33-F000
100FITS
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Untitled
Abstract: No abstract text available
Text: DG808BC45 Gate Turn-off Thyristor DS5914-1.0 April 2007 LN25279 KEY PARAMETERS FEATURES • Double Side Cooling • High Reliability In Service • High Voltage Capability • Fault Protection Without Fuses • High Surge Current Capability • Turn-off Capability Allows Reduction in
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DG808BC45
DS5914-1
LN25279)
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DG808BC45
Abstract: DG808BC
Text: DG808BC45 Gate Turn-off Thyristor DS5914-2 July 2014 LN31731 KEY PARAMETERS FEATURES Double Side Cooling ITCM VDRM I(AV) dVD/dt* dIT/dt High Reliability In Service High Voltage Capability Fault Protection Without Fuses 3000A 4500V 780A 1000V/µs 400A/µs
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DG808BC45
DS5914-2
LN31731)
000V/Â
DG808BC45
DG808BC
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DIM300XCM45-F000
Abstract: No abstract text available
Text: DIM300XCM45-F000 IGBT Chopper Module DS5918- 1.3 February 2009 LN26586 FEATURES Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9V 300A
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DIM300XCM45-F000
DS5918-
LN26586)
DIM300XCM45-F000
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DIM300XCM45-F000
Abstract: AAAD LN25740
Text: DIM300XCM45-F000 IGBT Chopper Module Provisional DS5918 1.1 November 2007 LN25740 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9 V 300A 600A
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DIM300XCM45-F000
DS5918
LN25740)
DIM300XCM45-F000
AAAD
LN25740
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COMP R
Abstract: No abstract text available
Text: OPB Universal Serial Bus 2.0 Device v1.00a DS591 May 10, 2007 Product Specification Introduction LogiCORE Facts The Xilinx Universal Serial Bus 2.0 High Speed Device with On-chip Peripheral Bus (OPB) enables USB connectivity to the user’s design with a minimal amount
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DS591
COMP R
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TGS 825
Abstract: gate turn-off Gate Turn-Off Thyristors A780A DG808BC DG808BC45 360Kn
Text: DG808BC45 Gate Turn-off Thyristor DS5914-1.1 January 2009 LN26575 KEY PARAMETERS FEATURES Double Side Cooling ITCM VDRM I(AV) dVD/dt* dIT/dt High Reliability In Service High Voltage Capability Fault Protection Without Fuses 3000A 4500V 780A 1000V/µs 400A/µs
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DG808BC45
DS5914-1
LN26575)
TGS 825
gate turn-off
Gate Turn-Off Thyristors
A780A
DG808BC
DG808BC45
360Kn
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DFM400NXM33-F000
Abstract: DFM400NXM33-F
Text: DFM400NXM33-F000 Fast Recovery Diode Module Replaces DS5910-1.0 DS5910-2 December 2010 LN27786 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates
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DFM400NXM33-F000
DS5910-1
DS5910-2
LN27786)
DFM400NXM33-F000
DFM400NXM33-F
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DIM300XCM45-F000
Abstract: 8888a
Text: DIM300XCM45-F000 IGBT Chopper Module Provisional DS5918 1.2 December 2007 LN25834 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9 V 300A 600A
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DIM300XCM45-F000
DS5918
LN25834)
DIM300XCM45-F000
8888a
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DFM1200EXM18-A000
Abstract: No abstract text available
Text: DFM1200EXM18-A000 Fast Recovery Diode Module DS5913-1.0 April 2007 LN25255 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate • Triple Diodes Can be paralleled for 3600A
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DFM1200EXM18-A000
DS5913-1
LN25255)
DFM1200EXM18-A000
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Untitled
Abstract: No abstract text available
Text: DG808BC45 Gate Turn-off Thyristor DS5914-1.1 January 2009 LN26575 KEY PARAMETERS FEATURES Double Side Cooling ITCM VDRM I(AV) dVD/dt* dIT/dt High Reliability In Service High Voltage Capability Fault Protection Without Fuses 3000A 4500V 780A 1000V/µs 400A/µs
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DG808BC45
DS5914-1
LN26575)
000V/Â
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Untitled
Abstract: No abstract text available
Text: DFM800NXM33-F000 Fast Recovery Diode Module Replaces DS5911-1.0 DS5911-2 December 2010 LN27787 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates
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DFM800NXM33-F000
DS5911-1
DS5911-2
LN27787)
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Untitled
Abstract: No abstract text available
Text: DFM1200NXM33-F000 Fast Recovery Diode Module Replaces DS5912-1.0 DS5912-2 December 2010 LN27788 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates
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DFM1200NXM33-F000
DS5912-1
DS5912-2
LN27788)
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DFM800NXM33-F000
Abstract: DFM800NXM33-F
Text: DFM800NXM33-F000 Fast Recovery Diode Module Replaces DS5911-1.0 DS5911-2 December 2010 LN27787 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates
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DFM800NXM33-F000
DS5911-1
DS5911-2
LN27787)
DFM800NXM33-F000
DFM800NXM33-F
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DFM1200EXM18-A000
Abstract: DFM1200EXM18-A
Text: DFM1200EXM18-A000 Fast Recovery Diode Module Replaces DS5913-1.0 DS5913-2 April 2011 LN28313 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base with AlN Substrates
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DFM1200EXM18-A000
DS5913-1
DS5913-2
LN28313)
DFM1200EXM18-A000
DFM1200EXM18-A
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DFM800NXM33-F000
Abstract: No abstract text available
Text: DFM800NXM33-F000 Fast Recovery Diode Module DS5911-1.0 March 2007 LN25213 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1600A Rating
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DFM800NXM33-F000
DS5911-1
LN25213)
DFM800NXM33-F000
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Untitled
Abstract: No abstract text available
Text: DFM400NXM33-F000 Fast Recovery Diode Module Replaces DS5910-1.0 DS5910-2 December 2010 LN27786 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates
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DFM400NXM33-F000
DS5910-1
DS5910-2
LN27786)
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DFM600XXM45-F000
Abstract: No abstract text available
Text: DFM600XXM45-F000 Fast Recovery Diode Module Replaces DS5915-1.0 DS5915-2 December 2010 LN27892 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates
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DFM600XXM45-F000
DS5915-1
DS5915-2
LN27892)
DFM600XXM45-F000
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EVB-USB3300-XLX
Abstract: ML401 microblaze UG082 XAPP997 usb PHY "Hot Plug and Play" x997
Text: Application Note: Embedded Processing R XAPP997 v1.0 May 15, 2007 Summary Reference Design: LogiCore OPB USB 2.0 Device Author: Geraldine Andrews, Vidhumouli Hunsigida The application note demonstrates the use of the On-Chip Peripheral Bus (OPB) Universal
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XAPP997
ML401
UG082,
ML40x
DS591,
EVB-USB3300-XLX
ML401
microblaze
UG082
XAPP997
usb PHY
"Hot Plug and Play"
x997
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SF-31N
Abstract: 16 SOT-143 MOTOROLA C 318B MRF9011 MRF9011L SF-11N FXR SF-31N transistor d 1556 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ microlab slug tuner SF
Text: Order this data sheet by MRF9011/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF9011 MRF9011L The RF Line N P N S ilic o n H igh-Frequency T ra n sisto r . . . designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times.
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OT-143
MRF9011)
MRF9011L)
MRF9011/D
MRF9011
MRF9011L
SF-31N
16 SOT-143 MOTOROLA
C 318B
MRF9011
MRF9011L
SF-11N
FXR SF-31N
transistor d 1556
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
microlab slug tuner SF
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