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Catalog Datasheet	MFG & Type	PDF	Document Tags
DMG6602SVT-7 Abstract: marking code 66C Text: DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Device V BR DSS Q1 30V Q2 Features and Benefits • • • • • • • ID RDS(on) TA = 25°C 60mΩ @ VGS = 10V 3.4A 100mΩ @ VGS = 4.5V 2.7A 95mΩ @ VGS = -10V -2.8A 140mΩ @ VGS = -4.5V -2.3A Mechanical Data	Original	PDF	DMG6602SVT AEC-Q101 TSOT26 J-STD-020 DS35106 DMG6602SVT-7 marking code 66C
DMG6602SVT Abstract: No abstract text available Text: DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Device V BR DSS Q1 30V Q2 Features and Benefits • • • • • • • ID RDS(on) TA = 25°C 60mΩ @ VGS = 10V 3.4A 100mΩ @ VGS = 4.5V 2.7A 95mΩ @ VGS = -10V -2.8A 140mΩ @ VGS = -4.5V -2.3A Mechanical Data	Original	PDF	DMG6602SVT AEC-Q101 TSOT26 J-STD-020 DS35106 DMG6602SVT
D3A marking code diode Abstract: No abstract text available Text: DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Device V BR DSS Q1 30V Q2 Features and Benefits • • • • • • • ID RDS(on) TA = 25°C 60mΩ @ VGS = 10V 3.4A 100mΩ @ VGS = 4.5V 2.7A 95mΩ @ VGS = -10V -2.8A 140mΩ @ VGS = -4.5V -2.3A Mechanical Data	Original	PDF	DMG6602SVT AEC-Q101 TSOT26 J-STD-020 DS35106 D3A marking code diode
Untitled Abstract: No abstract text available Text: DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Device V BR DSS Q1 30V Q2 Features and Benefits • • • • • • • ID RDS(on) TA = 25°C 60mΩ @ VGS= 10V 3.4A 100mΩ @ VGS= 4.5V 2.7A 95mΩ @ VGS= -10V -2.8A 140mΩ @ VGS= -4.5V -2.3A Mechanical Data	Original	PDF	DMG6602SVT AEC-Q101 TSOT26 J-STD-020 DS35106
Untitled Abstract: No abstract text available Text: DMMT2907A ADV AN CE I N FORM AT I ON 60V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data • • • • • • • • • • BVCEO > -60V ICM = -1A Peak Pulse Current General purpose NPN transistors ideally suited for low power	Original	PDF	DMMT2907A AEC-Q101 DS35106
Untitled Abstract: No abstract text available Text: DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Device V BR DSS Q1 30V Q2 Features and Benefits • • • • • • • ID RDS(on) TA = 25°C 60mΩ @ VGS = 10V 3.4A 100mΩ @ VGS = 4.5V 2.7A 95mΩ @ VGS = -10V -2.8A 140mΩ @ VGS = -4.5V -2.3A Mechanical Data	Original	PDF	DMG6602SVT DS35106
Untitled Abstract: No abstract text available Text: DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Device V BR DSS Q1 30V Q2 Features and Benefits • • • • • • • ID RDS(on) TA = 25°C 60mΩ @ VGS = 10V 3.4A 100mΩ @ VGS = 4.5V 2.7A 95mΩ @ VGS = -10V -2.8A 140mΩ @ VGS = -4.5V -2.3A Mechanical Data	Original	PDF	DMG6602SVT AEC-Q101 TSOT26 J-STD-020 DS35106
marking 907 Abstract: SOT-26 ds35106 Text: DMMT2907A ADVANCE INFORMATION 60V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data • • • • • • • • • • BVCEO > -60V ICM = -1A Peak Pulse Current General purpose NPN transistors ideally suited for low power	Original	PDF	DMMT2907A AEC-Q101 J-STD-020 MIL-STD-202, DS35106 marking 907 SOT-26