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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: DMN3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V	Original	PDF	DMN3007LSS AEC-Q101 J-STD-020D DS31460
DMN3007LSS Abstract: N3007 N3007LS DMN3007LSS-13 Text: DMN3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage	Original	PDF	DMN3007LSS AEC-Q101 J-STD-020 MIL-STD-202, DS31460 DMN3007LSS N3007 N3007LS DMN3007LSS-13
Untitled Abstract: No abstract text available Text: DMN3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance • 7m @ VGS = 10V • 10m @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage	Original	PDF	DMN3007LSS AEC-Q101 J-STD-020 MIL-STD-202 DS31460
DMN3007LSS Abstract: N3007LS Text: DMN3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage	Original	PDF	DMN3007LSS AEC-Q101 J-STD-020 MIL-STD-202, DS31460 621-DMN3007LSS-13 DMN3007LSS-13 DMN3007LSS N3007LS
DMN3007LSS Abstract: DMN3007LSS-13 J-STD-020D N3007LS Text: DMN3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V Low Gate Threshold Voltage	Original	PDF	DMN3007LSS AEC-Q101 J-STD-020D DS31460 DMN3007LSS DMN3007LSS-13 J-STD-020D N3007LS
Untitled Abstract: No abstract text available Text: DMN3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON max ID max TA = +25°C 7mΩ @ VGS = 10V 16A 10mΩ @ VGS = 4.5V 13.5A V(BR)DSS 30V Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching	Original	PDF	DMN3007LSS AEC-Q101 DS31460
N3007LS Abstract: No abstract text available Text: DMN3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V	Original	PDF	DMN3007LSS AEC-Q101 J-STD-020D DS31460 N3007LS