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Untitled Abstract: No abstract text available Text: DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage	Original	PDF	DMN32D2LFB4 AEC-Q101 DFN1006H4-3 J-STD-020 MIL-STD-202, DS31124
Untitled Abstract: No abstract text available Text: DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • • • N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max	Original	PDF	DMN32D2LFB4 AEC-Q101 DFN1006H4-3 DS31124
Untitled Abstract: No abstract text available Text: DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max 30V 1.2 @ VGS = 4V 1.5 @ VGS = 2.5V 2.2 @ VGS = 1.8V •          ID max TA = +25C 415mA 370mA 300mA Description This MOSFET has been designed to minimize the on-state resistance	Original	PDF	DMN32D2LFB4 415mA 370mA 300mA DS31124
Untitled Abstract: No abstract text available Text: DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • • • Mechanical Data • • N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max	Original	PDF	DMN32D2LFB4 AEC-Q101 DFN1006H4-3 DS31124
DMN32D2LFB4 Abstract: DFN1006H4-3 J-STD-020D Text: DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max	Original	PDF	DMN32D2LFB4 AEC-Q101 DFN1006H4-3 J-STD-020D DS31124 DMN32D2LFB4 DFN1006H4-3 J-STD-020D
Untitled Abstract: No abstract text available Text: DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage	Original	PDF	DMN32D2LFB4 AEC-Q101 DFN1006H4-3 J-STD-020 DS31124
DMN32D2LFB4 Abstract: DFN1006-3 DFN1006H4-3 Text: DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data • • N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max Low Input Capacitance Fast Switching Speed	Original	PDF	DMN32D2LFB4 AEC-Q101 DFN1006H4-3 J-STD-020C DS31124 DMN32D2LFB4 DFN1006-3 DFN1006H4-3
Untitled Abstract: No abstract text available Text: DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage	Original	PDF	DMN32D2LFB4 AEC-Q101 X2-DFN1006-3 J-STD-020 MIL-STD-202, DS31124