NONLINEAR MODEL LDMOS
Abstract: No abstract text available
Text: RFSA2013 RFSA2013 Voltage Controlled Attenuator VOLTAGE CONTROLLED ATTENUATOR MODE VDD VC GND Package Style: QFN, 16-Pin, 0.9mm x 3mm x 3mm 16 15 14 13 Features Broadband 50MHz to 4000MHz Frequency Range 30dB Attenuation Range +50dBm IIP3 Typical
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RFSA2013
16-Pin,
50dBm
50MHz
4000MHz
80dBm
30dBm
DS110913
NONLINEAR MODEL LDMOS
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rf mems switch using Power Handling
Abstract: No abstract text available
Text: FMS2016-001 FMS2016-001 High Power GaAs SP4T Switch HIGH POWER GaAs SP4T SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2016-001 is a low loss, high power, linear single-pole four-throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power
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Original
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PDF
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FMS2016-001
FMS2016-001
FMS2016-001SR
FMS2016-001SQ
FMS2016-001-EB
DS110913
rf mems switch using Power Handling
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Untitled
Abstract: No abstract text available
Text: RFSA2023 RFSA2023 Voltage Controlled Attenuator VOLTAGE CONTROLLED ATTENUATOR Features Broadband 50MHz to 4000MHz Frequency Range 30dB Attenuation Range +50dBm IIP3 Typical +80dBm IIP2 Typical NC 4 12 GND 11 NC VDD VC GND 10 RFOUT 9 6 7 NC 8 GND
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Original
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PDF
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RFSA2023
16-Pin,
50MHz
4000MHz
80dBm
50dBm
30dBm
DS110913
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