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Untitled Abstract: No abstract text available Text: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB	Original	PDF	RF3931D 96mmx1 33mmx0 DS110520
Untitled Abstract: No abstract text available Text: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=13dB at 2GHz  48V Typical Packaged Performance	Original	PDF	RF3934D 96mmx4 57mmx0 DS110520
schematic diagram power amplifier free Abstract: GRM155R61A105 Text: RFVA2017 RFVA2017Analog Controlled Variable Gain Amplifier ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER Package: MCM, 7mmx7mm VCTRL 8 Features Applications     Cellular, 3G and 4G Infrastructure WiBro, WiMax, LTE Microwave Radio High Linearity Power Control	Original	PDF	RFVA2017Analog RFVA2017 RFVA2017 DS110520 schematic diagram power amplifier free GRM155R61A105
Untitled Abstract: No abstract text available Text: RF3932D 60W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF IN VG • Output Power 75W at P3dB	Original	PDF	RF3932D 96mmx1 92mmx0 RF3932D DS110520
Untitled Abstract: No abstract text available Text: RF3932D 60W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF IN VG • Output Power 75W at P3dB	Original	PDF	RF3932D 96mmx1 92mmx0 DS110520
Untitled Abstract: No abstract text available Text: RF3933D RF3933D90 W GaN on SiC Power Amplifier Die 90W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features  Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=14dB at 2GHz  48V Typical Packaged Performance	Original	PDF	RF3933D RF3933D90 96mmx2 52mmx0 RF3933D DS110520
46dBm Abstract: No abstract text available Text: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB	Original	PDF	RF3931D 96mmx1 33mmx0 RF3931D DS110520 46dBm
RFMD HEMT GaN SiC Abstract: Gan hemt transistor RFMD LDMOS 90W Text: RF3933D RF3933D90 W GaN on SiC Power Amplifier Die 90W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz RF IN VG Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged	Original	PDF	RF3933D90 RF3933D 96mmx2 52mmx0 RF3933D DS110520 RFMD HEMT GaN SiC Gan hemt transistor RFMD LDMOS 90W
Untitled Abstract: No abstract text available Text: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology   RF IN VG Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged	Original	PDF	RF3934D RF3934D 96mmx4 57mmx0 DS110520