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trace code marking RFMD Abstract: SBB-2089 SBB2089Z SBB-2089Z SBB2089 rfmd mmic MARKING RFMD bb2z marking amplifier mmic marking bb2z Text: SBB-2089Z SBB-2089Z 50 MHz to 850 MHz, Cascadable Active Bias InGaP HBT MMIC Amplifier 50 MHz to 850 MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBB-2089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active	Original	PDF	SBB-2089Z OT-89 SBB-2089Z DS100601 SBB2089Z" trace code marking RFMD SBB-2089 SBB2089Z SBB2089 rfmd mmic MARKING RFMD bb2z marking amplifier mmic marking bb2z
Untitled Abstract: No abstract text available Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF28N300 VCES = 3000V IC90 = 28A VCE sat  2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ VCGR TJ = 25°C to 150°C, RGE = 1M	Original	PDF	IXBF28N300 100ms 28N300
Untitled Abstract: No abstract text available Text: FPD7612 FPD7612General Purpose pHEMT GENERAL PURPOSE pHEMT Package Style: Bare Die Product Description Features The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25mx200m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed	Original	PDF	FPD7612 FPD7612General FPD7612 mx200ï 12GHz 18GHz 22-A114. MIL-STD-1686 MIL-HDBK-263.
FPD200P70 Abstract: No abstract text available Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.	Original	PDF	FPD200P70 FPD200P70 25mmx200mm 26GHz 20dBm 15GHz EB200P70-AJ
RF SWITCH QFN-12pin Abstract: RF1236 Text: RF1236 BROADBAND MEDIUM POWER DIFFERENTIAL SP3T SWITCH Package Style: QFN, 12-Pin, 2.0mmx2.0mmx0.55mm RF1_P Features      Broadband Frequency Performance Low Frequency - 4GHz Very Low Insertion Loss: 0.25dB Typ at 0.90GHz 0.6dB Typ at 1.90GHz	Original	PDF	RF1236 12-Pin, 90GHz 109dBm 16dBm 105dBm RF SWITCH QFN-12pin RF1236
fpd200p70 Abstract: w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.	Original	PDF	FPD200P70 FPD200P70 25mmx200mm 26GHz 20dBm 15GHz EB200P70-AJ w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor
AlGaAs resistivity Abstract: fpd7612-000s3 FPD7612 RFMD FPD7612 MIL-HDBK-263 InP transistor HEMT TRANSISTOR 841 DS100601 Text: FPD7612 FPD7612General Purpose pHEMT GENERAL PURPOSE pHEMT Package Style: Bare Die Product Description Features The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25mx200m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed	Original	PDF	FPD7612 FPD7612General FPD7612 25mx200m 12GHz 18GHz 22-A114. MIL-STD-1686 MIL-HDBK-263. AlGaAs resistivity fpd7612-000s3 FPD7612 RFMD MIL-HDBK-263 InP transistor HEMT TRANSISTOR 841 DS100601