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    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 533 Registered DIMM 1024MB With 64Mx8 CL4 TS128MQR72V5J Placement Description The TS128MQR72V5J is a 128M x 72bits DDR2-533 Registered DIMM. The TS128MQR72V5J consists of 18 pcs 64Mx8 bits DDR2 SDRAMs in 60 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs


    Original     		PDF 240PIN 1024MB 64Mx8 TS128MQR72V5J TS128MQR72V5J 72bits DDR2-533 240-pin

    Untitled

    Abstract: No abstract text available
    Text: 4GB x72, ECC, DR 240-Pin 1.35V DDR3L VLP RDIMM Features 1.35V DDR3L SDRAM VLP RDIMM MT18KDF51272PDZ – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C L) • DDR3L functionality and operations supported as defined in the component data sheet • 240-pin, very low profile, 18.75mm, registered dual


    Original     		PDF 240-Pin MT18KDF51272PDZ 240-pin, PC3-12800, PC3-10600, PC3-8500, PC3-6400 09005aef83aa70c0 kdf18c512x72pdz

    Untitled

    Abstract: No abstract text available
    Text: 8GB x72, ECC, SR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT18JSF1G72PZ – 8GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C C2) • DDR3 functionality and operations supported as per the component data sheet • 240-pin, registered dual in-line memory module


    Original     		PDF 240-Pin MT18JSF1G72PZ 240-pin, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 09005aef84854d35 jsf18c1gx72pz

    DDR2-400

    Abstract: DDR2-533 K4T56043QF K4T56083QF
    Text: 256MB, 512MB, Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 256Mb F-die 72-bit ECC Revision 1.0 January 2004 Rev. 1.0 Jan. 2004 DDR2 SDRAM 256MB, 512MB, Registered DIMMs DDR2 Registered DIMM Ordering Information


    Original     		PDF 256MB, 512MB, 240pin 256Mb 72-bit M393T3253FG0-CD5/CC 256MB 32Mx72 DDR2-400 DDR2-533 K4T56043QF K4T56083QF

    DDR400

    Abstract: K4H560838E M312L3223EG0-CCC M312L6420EG0-CCC
    Text: 256MB, 512MB, 1GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module DDR400 Module 60FBGA 184pin Registered Module based on 256Mb E-die (x4, x8) with 1,200mil Height Revision 1.1 August. 2003 Rev. 1.1 August. 2003 256MB, 512MB, 1GB Registered DIMM DDR SDRAM


    Original     		PDF 256MB, 512MB, DDR400 60FBGA) 184pin 256Mb 200mil K4H560838E M312L3223EG0-CCC M312L6420EG0-CCC

    DDR200

    Abstract: DDR266A DDR266B M312L2923MT0
    Text: M312L2923MT0 184pin 1U Registered DDR SDRAM MODULE 1GB DDR SDRAM MODULE 128Mx72(64Mx72*2 bank based on 64Mx8 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.2 Jan. 2002 Rev. 0.2 Jan. 2002 M312L2923MT0 184pin 1U Registered DDR SDRAM MODULE


    Original     		PDF M312L2923MT0 184pin 128Mx72 64Mx72 64Mx8 72-bit DDR266A DDR200 DDR266A DDR266B M312L2923MT0

    dm 533

    Abstract: K4T5108 M393T5750BS0-CD5 DDR2-533
    Text: 512MB, 1GB, 2GB Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC Revision 1.0 January 2004 Rev. 1.0 Jan. 2004 DDR2 SDRAM 512MB, 1GB, 2GB Registered DIMMs DDR2 Registered DIMM Ordering Information


    Original     		PDF 512MB, 240pin 512Mb 72-bit M393T6553BG0-CD5/CC 512MB 64Mx72 64Mx8 K4T51083QB) dm 533 K4T5108 M393T5750BS0-CD5 DDR2-533

    Untitled

    Abstract: No abstract text available
    Text: M383L6423DTS 184pin Registered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx72(32Mx72*2 bank based on 32Mx8 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.2 May. 2002 Rev. 0.2 May. 2002 M383L6423DTS 184pin Registered DDR SDRAM MODULE Revision History


    Original     		PDF M383L6423DTS 184pin 512MB 64Mx72 32Mx72 32Mx8 72-bit

    100MHZ

    Abstract: 133MHZ PC200 V827332U04S
    Text: MOSEL VITELIC V827332U04S 2.5 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE PRELIMINARY Features Description • 184 Pin Registered 33,554,432 x 72 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 16M x 8 DDR SDRAM in TSOPII-66 Packages


    Original     		PDF V827332U04S TSOPII-66 V827332U04S T52-3775 100MHZ 133MHZ PC200

    MTI BD

    Abstract: No abstract text available
    Text: ADVANCE 8, 16 MEG x 72 DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT9VDDT872A, MT18VDDT1672A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • 184-pin dual in-line memory module DIMM • Utilizes 100 MHz and 133 MHz DDR SDRAM


    Original     		PDF MT9VDDT872A, MT18VDDT1672A 184-pin 128MB MTI BD

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 400 Registered DIMM 1024MB With 64Mx8 CL3 TS128MQR72V4J Description The TS128MQR72V4J is a 128M x 72bits DDR2-400 Registered DIMM. The TS128MQR72V4J consists of 18 pcs 64Mx8its DDR2 SDRAMs in 60 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs PLL driver


    Original     		PDF 240PIN 1024MB 64Mx8 TS128MQR72V4J TS128MQR72V4J 72bits DDR2-400 64Mx8its 240-pin

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL33B1K68F-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ULP ECC REGISTERED DIMM 240-PIN Description The VL33B1K68F is a 1Gx72 DDR3 SDRAM high density RDIMM. This memory module is dual rank, consists of eighteen stacked CMOS 1Gx4 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered


    Original     		PDF VL33B1K68F-K0/K9/F8/E7S 1Gx72 240-PIN VL33B1K68F 28-bit 240-pin 240-pin,

    a13b 5 pin

    Abstract: A13B AMB0480 diode A14A IDTAMB0480 DDR2-533 DDR2-667 ADVANCED COMMUNICATION DEVICES A12A a12b 5 pin
    Text: IDTAMB0480 ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM COMMERCIAL TEMPERATURE RANGE ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES IDTAMB0480 PRODUCT BRIEF FEATURES: DESCRIPTION: • • • • • The fully buffered dual in-line memory module FB-DIMM is the next


    Original     		PDF IDTAMB0480 AMB0480xxRJ8 AMB0480xxRJ AMB0480xxRH8 AMB0480xxRH a13b 5 pin A13B AMB0480 diode A14A IDTAMB0480 DDR2-533 DDR2-667 ADVANCED COMMUNICATION DEVICES A12A a12b 5 pin

    DTM63614

    Abstract: No abstract text available
    Text: DTM63614 1GB-128M x 72, 184 Pin Registered DDR SDRAM DIMM Performance Range 266MHz/CL=2.5 200MHz/CL=2 Features Description Utilizes 133MHz DDR SDRAM Auto & self refresh capability SSTL_2 compatible inputs and outputs VDD/VDDQ= 2.5V +/- 0.2V MRS cycle, with address key, programs Latency Access


    Original     		PDF DTM63614 1GB-128M 266MHz/CL 200MHz/CL 133MHz 184-pin DTM63614 DTM6361ANCE 100MHz) DQ0-DQ63,

    M383L3223BT1

    Abstract: PC200
    Text: M383L3223BT1 184pin Registered DDR SDRAM MODULE 256MB DDR SDRAM MODULE 32Mx72 based on 32Mx8 DDR SDRAM Registered 184pin DIMM 72-bit ECC/Parity Revision 0.9 June. 2001 Rev. 0.9 June. 2001 184pin Registered DDR SDRAM MODULE M383L3223BT1 Revision History Revision 0 (Aug 1998)


    Original     		PDF M383L3223BT1 184pin 256MB 32Mx72 32Mx8 72-bit 133Mhz) M383L3223BT1 PC200

    k3661

    Abstract: DDR200 DDR266A DDR266B HYMD212G726K4-H HYMD212G726K4-K HYMD212G726K4-L
    Text: HYMD212G726K4-K/H/L 128Mx72 Registered DDR SDRAM DIMM PRELIMINARY DESCRIPTION Hynix HYMD212G726K4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules DIMMs which are organized as 128Mx72 high-speed memory arrays. HynixHYMD212G726K4-K/H/L series


    Original     		PDF HYMD212G726K4-K/H/L 128Mx72 HYMD212G726K4-K/H/L 184-pin HynixHYMD212G726K4-K/H/L 128Mx4 400mil 184pin k3661 DDR200 DDR266A DDR266B HYMD212G726K4-H HYMD212G726K4-K HYMD212G726K4-L

    EBE10AD4AGFA-6E-E

    Abstract: DDR2-400 DDR2-533 DDR2-667 EBE10AD4AGFA EBE10AD4AGFA-4A-E EBE10AD4AGFA-5C-E E0865E11
    Text: PRELIMINARY DATA SHEET 1GB Registered DDR2 SDRAM DIMM EBE10AD4AGFA 128M words x 72 bits, 1 Rank Specifications Features • Density: 1GB • Organization  128M words × 72 bits, 1 rank • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory


    Original     		PDF EBE10AD4AGFA 240-pin 667Mbps/533Mbps/400Mbps cycles/64ms M01E0107 E0865E11 EBE10AD4AGFA-6E-E DDR2-400 DDR2-533 DDR2-667 EBE10AD4AGFA EBE10AD4AGFA-4A-E EBE10AD4AGFA-5C-E E0865E11

    Untitled

    Abstract: No abstract text available
    Text: V826616J24SC 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE Features Description • 184 Pin Unbuffered 16,777,216 x 64 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 16M x 16 DDR SDRAM in TSOPII-66 Packages ■ Single +2.5V ± 0.2V Power Supply


    Original     		PDF V826616J24SC TSOPII-66 DDR400

    DDR266A

    Abstract: hp 5610 M312L6523MT0
    Text: M312L6523MT0 184pin 1U Registered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx72 based on 64Mx8 DDR SDRAM Registered 184pin DIMM 72-bit ECC/Parity Revision 0.0 October. 2001 Rev. 0.0 Oct. 2001 M312L6523MT0 184pin 1U Registered DDR SDRAM MODULE Revision History


    Original     		PDF M312L6523MT0 184pin 512MB 64Mx72 64Mx8 72-bit DDR266A hp 5610 M312L6523MT0

    M312L2920MT0

    Abstract: No abstract text available
    Text: M312L2920MT0 184pin 1U Registered DDR SDRAM MODULE 1GB DDR SDRAM MODULE 128Mx72 based on 128Mx4 DDR SDRAM Registered 184pin DIMM 72-bit ECC/Parity Revision 0.0 October. 2001 Rev. 0.0 Oct. 2001 M312L2920MT0 184pin 1U Registered DDR SDRAM MODULE Revision History


    Original     		PDF M312L2920MT0 184pin 128Mx72 128Mx4 72-bit M312L2920MT0

    M312L5628MT0

    Abstract: DDR266A
    Text: M312L5628MT0 184pin 1U Registered DDR SDRAM MODULE 2GB DDR SDRAM MODULE 256Mx72 (128Mx72 *2)based on 128Mx4 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.0 October. 2001 - -1 - Rev. 0.0 Oct. 2001 M312L5628MT0 184pin 1U Registered DDR SDRAM MODULE


    Original     		PDF M312L5628MT0 184pin 256Mx72 128Mx72) 128Mx4 72-bit M312L5628MT0 DDR266A

    PC2-5300

    Abstract: SSTL-18 NT2GT72U4NA2BV
    Text: NT512T72U89A0BV / NT1GT72U4PA0BV / NT2GT72U4NA2BV 512MB: 64M x 72 / 1GB: 128M X 72 / 2GB: 256M X 72 Registered DDR2 SDRAM DIMM 240pin Registered DDR2 SDRAM MODULE Based on 64Mx8 & 128Mx4 DDR2 SDRAM Die A Features • 64Mx72 Registered DDR2 DIMM based on 64Mx8 DDR2


    Original     		PDF NT512T72U89A0BV NT1GT72U4PA0BV NT2GT72U4NA2BV 512MB: 240pin 64Mx8 128Mx4 64Mx72 64Mx8 128Mx72 PC2-5300 SSTL-18 NT2GT72U4NA2BV

    cc 052

    Abstract: No abstract text available
    Text: TO SH IBA THMD51E30B70,75,80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD51E30B is a 67,108,864-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 18 TC59SM803BFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMD51E30B70 THMD51E30B 864-word 72-bit TC59SM803BFT 72-bit Refre15 cc 052

    Untitled

    Abstract: No abstract text available
    Text: intJ. 2-MBIT 128K x 16, 256K x 8 LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 28F200BL-T/B, 28F002BL-T/B m Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.0V-3.6 V • Automatic Power Savings Feature — 0.8 mA Typical Ice Active Current in


    OCR Scan     		PDF 28F200BL-T/B, 28F002BL-T/B x8/x16 28F200BL-T, 28F200BL-B 16-bit 32-bit 28F002BL-T, 28F002BL-B 16-KB