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    DQ160 Search Results

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    DQ160 Price and Stock

    SiTime Corporation SIT9003AC-33-33DQ-16.00000

    MEMS OSC XO 16.0000MHZ LVCMOS LV
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    DigiKey SIT9003AC-33-33DQ-16.00000 1
    • 1 $3.21
    • 10 $2.772
    • 100 $2.3935
    • 1000 $2.06912
    • 10000 $1.87027
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    SiTime Corporation SIT9003AI-24-33DQ-16.00000Y

    MEMS OSC XO 16.0000MHZ LVCMOS LV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT9003AI-24-33DQ-16.00000Y Reel 1,000
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    • 1000 $1.4455
    • 10000 $1.4455
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    Avnet Americas SIT9003AI-24-33DQ-16.00000Y Reel 24 Weeks 1,000
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    SiTime Corporation SIT9003AI-24-33DQ-16.00000T

    MEMS OSC XO 16.0000MHZ LVCMOS LV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT9003AI-24-33DQ-16.00000T Reel 3,000
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    Avnet Americas SIT9003AI-24-33DQ-16.00000T Reel 24 Weeks 3,000
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    SiTime Corporation SIT9003AI-24-33DQ-16.000000X

    MEMS OSC XO 16.0000MHZ LVCMOS LV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT9003AI-24-33DQ-16.000000X Reel 250
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    SiTime Corporation SIT9003AC-33-33DQ-16.00000T

    LOW POWER PROGRAMMABLE SPREAD SPECTRUM OSCILLATOR, -20 TO 70C, 5032, 50PPM, 3.3V, 16MHZ, SD, -1.0%, SMD - Tape and Reel (Alt: SIT9003AC-33-33DQ-)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIT9003AC-33-33DQ-16.00000T Reel 24 Weeks 3,000
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    DQ160 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: December 1993 Edition 1.0 FUpSU DATA SHEET M B 9 8 B 7 5 14-80 DRAM MEMORY CARD DYNAMIC RANDOM ACCESS MEMORY CARD 4M x 18 bits / 2M x 36 bits The Fujitsu MB98B7514 is a Dynamic Random Access Memory DRAM card consisting of sixteen MB814400AL devices and eight MB81C1000AL devices.


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    MB98B7514 MB814400AL MB81C1000AL 88-pin 18-bit 36-bit MB98B7514-80 CRD-88P-M01) PDF

    DQ620

    Abstract: No abstract text available
    Text: VS864648041.VS1664648041B 8M,16Mx64-Bit SDRAM Module Preliminary Description The VS864648041B and VS1664648041B are 8Mx64-bit and 16Mx64-bit dual-in-line synchronous dynamic RAM module DIMM . It is mounted with 8/16 pieces of 8MxB synchronous DRAM (VG36648041BT), and each in a standard 54 pin TSOP package. The VS864648041B and VS1664648041B


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    VS864648041 VS1664648041B 16Mx64-Bit VS864648041B 8Mx64-bit VG36648041BT) DQ620 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS26417801 C,VS46417801C 2M,4MX64-Bit SDRAM Module VIS Description The V S 264 17 8 0 1 C and V S 4 6 4 1 7 8 0 1 C are 2M x 64 - bit and 4M x 64 - bit dual - in - line syn ch ro n o u s dynam ic RAM m odule D R A M V G 3617801C T , (D IM M ). and each It


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    VS26417801 VS46417801C 4MX64-Bit 3617801C G5-0156 PDF

    D4512

    Abstract: d4512844 D29D31 DQ200-V D45128
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4564EC726 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C-4564EC726 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of 128 M SDRAM: ,uPD45128441 are assembled.


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    MC-4564EC726 72-BIT MC-4564EC726 uPD45128441 -4564EC726EFB-A80 -4564EC726EFB-A10 D4512 d4512844 D29D31 DQ200-V D45128 PDF

    D018

    Abstract: D019 D032 D051 THMY7232B0EG-80 F71R D038 CB1196
    Text: T O S H IB A THMY7232B0EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232B0EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TÒ59SM704FT DRAMs and PLL/Registers on a printed circuit board.


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    THMY7232B0EG-80 432-WORD 72-BIT THMY7232B0EG TC59SM704FT 72-bit D018 D019 D032 D051 THMY7232B0EG-80 F71R D038 CB1196 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY7232F0EG-75,-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232F0EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.


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    THMY7232F0EG-75 432-WORD 72-BIT THMY7232F0EG TC59SM704FT 72-bit THMY7232F0EG) PDF

    R2A3 02

    Abstract: R2A3 M1518 R2A3 load
    Text: TOSHIBA THMY721610BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721610BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6404BFTL DRAMs and PLL/Registers on a printed circuit board.


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    THMY721610BEG-80L THMY721610BEG 216-word 72-bit TC59S6404BFTL 72-bit THMY721610BEG) R2A3 02 R2A3 M1518 R2A3 load PDF

    Untitled

    Abstract: No abstract text available
    Text: SGRAM MODULE KMM965G511Q P N / KMM966G511Q(P)N 4MB SGRAM MODULE (512Kx64 SODIMM based on 512Kx32 SGRAM) Unbuffered SGRAM Graphics 64-bit Non-ECC/Parity 144-pin SODIMM Revision 2.1 March 1998 Rev. 2.1 (Mar. 1998) ELECTRONICS SGRAM MODULE KMM965G511Q(P)N / KMM966G511Q(P)N


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    KMM965G511Q KMM966G511Q 512Kx64 512Kx32 64-bit 144-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: V7S0 VS464641641B.VS864641641B 4M,8Mx64-Bit SDRAM Module Preliminary Description The VS4646441641B and VS8646441641B are 4Mx64-bit and 8Mx64-bit dual-in-line synchronous dynamic RAM module DIMM . It is mounted with 4/8 pieces of 4Mx16 synchronous DRAM (VG36641641BT), and each in a standard 54 pin TSOP package. The VS464641641B and VS864641641B


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    VS464641641B VS864641641B 8Mx64-Bit VS4646441641B VS8646441641B 4Mx64-bit 4Mx16 VG36641641BT) PDF

    Untitled

    Abstract: No abstract text available
    Text: MK32VT864-10YE 98.07.24 Semiconductor MK32VT864-1OYE 8,388,608 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):_ DESCRIPTION The Oki MK32VT864-10YE is a fully decoded, 8,388,608 x 64bit synchronous dynamic random access memory composed of eight 64Mb DRAMs (4Mx16) in TSOP packages


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    MK32VT864-10YE MK32VT864-1OYE MK32VT864-10YE 64bit 4Mx16) 144-pin 64-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: VS864648041 D,VS1664648041D 8M,16MX64-Bit SDRAM Module Description The VS864648041D and VS1664648041D are 8M x 64 bit and 16M bit x 64 Dual-ln-Line synchronous DRAM Module DIMM . It consists of 8/16 CMOS 8Mx8 bit synchronous DRAMs (VG36648041DT) with 4 banks and in standard 54 pin TSOP-II package. Decoupling capacitors are mounted on power supply line for


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    VS864648041 VS1664648041D 16MX64-Bit VS864648041D VG36648041DT) PC100/JEDEC PC133 VS864648041D) VS1664648041D) PDF

    DQ160

    Abstract: No abstract text available
    Text: SIEMENS 2 M X 32-Bit Dynamic RAM Module HYM 322120S-60/-70/-80 Advanced Information • 2 097 152 words by 32-Bit organization alternative 4 194 304 words by 16-Bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time


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    32-Bit 322120S-60/-70/-80 16-Bit) DQ160 PDF

    D012

    Abstract: D029 D030 EDI8F3264C D01225
    Text: ELECTRONIC DESIGNS INC SIE D • 32 30 1 1 4 00010SE QbT H E L D m m EDI8F3264C Electronic D itlgru lnc.a High Speed Two Megabit SRAM Module P illLO lfli 64Kx32 Static RAM CMOS, High Speed Module The EDI8F3264C is a high speed 2 megabit Static RAM module organized as 64Kx 32. This module is constructed


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    323011H EDI8F3264C 64Kx32 EDI8F3264C 64Kx4 3E30114 T-46-23-14 D012 D029 D030 D01225 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1307036 M/A-COM “The Powerpuck” GPS Antenna Features • • • • • Lightning Protection Groundplane Independent Multiple Connector and Mount Options Choice of Randome Colors Optional Mounting Kit Available Description Designed to operate in all climates and conditions, the


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    ANP-C-114-4 ANP-C-114 ANP-C-114-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: GMM77316283CTG-5/6 LG Semicon Co., Ltd. 16,777,216WORDS x 72 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 77316283CTG is an I6M x 72 bits D ynamic RAM M ODULE w hich is assembled 18 pieces o f 16M x 4bit DRAM s in 32 pin TSOP n package, one 2k EEPROM for SPD in 8-pin


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    GMM77316283CTG 77316283CTG GMM77316283CTG-5/6 216WORDS 77316283CTG GMM77316283CTG PDF

    intel 80 82

    Abstract: DQ-460 7801G DQM02 dg550
    Text: VS26417801B.VS46417801B 2M,4Mx64-Bit SDRAM Module Description The VS26417801B and VS46417801B are 2M x 64 - bit and 4M x 64 - bit dual - in - line synchronous dynamic RAM module DIMM . It is mounted with 8/16 pieces of 2M x 8 synchronous DRAM(VG3617801BT), and each in a standard 44 pin TSOP package. The VS26417801B and


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    VS26417801B VS46417801B 4Mx64-Bit VG3617801BT) VS26417801B, VS46417801B intel 80 82 DQ-460 7801G DQM02 dg550 PDF