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    9611B

    Abstract: No abstract text available
    Text: LUJ#3 90 I X 9 6 'I ^ 'A '- :ja iw ditj s u9 'I (S -= W - Í Y A£ = °/l) : W ífíiííiífT r CUt'T (s= 73y 'd - J A £ = 0A ) (diti) s m ( g - = 7 3 K ' 5 0 S = 7tf Ul 8 £0'0 UA m OS! sulJArf ZHW082~-ZHWS UA V rf vu ap 9fr A S '0 + = ^ A V HAS hp OUI/Arf


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    AD96IIBH. 9611BH 9611TH 280MHz 000internal 9611B PDF

    Hitachi 2SJ

    Abstract: No abstract text available
    Text: 2SJ450 Silicon P-Channel MOS FET HITACHI ADE-208-381 1st. Edition Application High speed power switching Features • Low on-resistance. • Low drive power • High speed switching • 2.5 V gate drive device. Outline UPAK 1. Gate 2. Drain 3. Source 4. Drain


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    2SJ450 ADE-208-381 Hitachi 2SJ PDF

    2N6545

    Abstract: 2N6546 2n6546 application note 2n6545 ti
    Text: 3 8 7 5liign-vonage 0 8 1 G EKower S O Lrransisiorb I D S T A_ TE 01 E □1 17200 w^ D u DE"J 3 Ô 7 S D Ô 1 D D 1 7 5 D D 1 2N6542, 2N6544, 2N6545, 2N6546 5*5 —* J • | C File Number 1Ï096 3-, 5-, and 10-A Power-Switching Transistors High-Voltage N-P-N Type for Off-Line Power Supplies and Other


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    2N6542, 2N6544, 2N6545, 2N6546 2N6545] RCA-2N6542, 2N6546 2N6545. 2N6545 2n6546 application note 2n6545 ti PDF

    mn4264

    Abstract: No abstract text available
    Text: PANASONIC INDL/ELEK -CIC} 72 _ . 6932852 ^ D E I blBHöSH D 0Q b 3 1 S 3 | PANASONIC LI" aiu asp ,. IND L » E L E C T R O N IC ' 7 2C 0 6 3 1 5 o J - Ÿ é - 2 3 -/£ | . M N 4264 6 5 ,5 3 6


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    MN4264 PDF

    Am29LV1608

    Abstract: No abstract text available
    Text: P R E LIM IN A R Y A M DC! Am29LV160B 16 Megabit 2 M X 8-B!t/1 M x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications


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    Am29LV160B 16-Bit) Am29LV1608 PDF

    TV847

    Abstract: LTV-817C LTV817C V847M
    Text: HIGH DENSITY MOUNTING TYPE PHOTOCOUPLER L I T E M i I - • - ~-K\ LTV817/LTV827/LTV847 LTV817S/LTV827S/4.TV847S LTV817M/LT V827M /LT V847M • FEATURES 1 C urrent tran sfer ratio CTR . MIN 5 0 % a t lF= 1 m A , V a = 5 V I 2 High in p u t-o u tp u t isolation voltage


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    LTV817/LTV827/LTV847 LTV817S/LTV827S/4 TV847S LTV817M/LT V827M V847M N---11 TV847 LTV-817C LTV817C V847M PDF

    S1237

    Abstract: S1236
    Text: TOSHIBA -G I X C R E T E / O P T O > 5b 90 972 50 TOSHIB A dìT | a a c h t e s oooaiat DISCRETE /O PT O) SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) Unit in nun POWER AMPLIFIER APPLICATIONS-. • ia3MAX. TV VERTICAL OUTPUT APPLICATIONS. ^g.6±ag 131 FEATURES:'


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    S1237 200X200X8mm 100X100X2mm 50X50X2mm S1237 S1236 PDF