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    DIODE ZL 82 Search Results

    DIODE ZL 82 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE ZL 82 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN-829

    Abstract: C1996 AN829
    Text: National Semiconductor Application Note 829 Joel Martinez Application Engineer June 1992 INTRODUCTION IEEE 1194 1 Standard for Electrical Characteristics of Backplane Transceiver Logic Interface Circuits validates BTL as the enabling technology for high speed busses Driving


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    diode zl 100

    Abstract: auirf AN-994
    Text: PD - 96380 AUTOMOTIVE GRADE AUIRF2903ZS AUIRF2903ZL HEXFET Power MOSFET Features l l l l l l l D Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant


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    PDF AUIRF2903ZS AUIRF2903ZL diode zl 100 auirf AN-994

    Untitled

    Abstract: No abstract text available
    Text: PD - 96380 AUTOMOTIVE GRADE AUIRF2903ZS AUIRF2903ZL HEXFET Power MOSFET Features l l l l l l l V BR DSS D Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant


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    PDF AUIRF2903ZS AUIRF2903ZL

    BTS 824 E

    Abstract: BTS 824 a diode zener ZL 27 siemens functional profet siemens functional description profet 824 mosfet 824 10 pins siemens Requirements for Power MOSFET connected in parallel diode 824
    Text: Target Datasheet BTS 824 Smart High-Side Power Switch Four Channels: 4 x 90mΩ Status Feedback Product Summary Operating Voltage Vbb on Active channels On-state Resistance RON Nominal load current IL(ISO) Current limitation IL(SCr) Package P-DSO-20-10 (Power SO 20)


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    PDF P-DSO-20-10 1999-Sep-01 BTS 824 E BTS 824 a diode zener ZL 27 siemens functional profet siemens functional description profet 824 mosfet 824 10 pins siemens Requirements for Power MOSFET connected in parallel diode 824

    P-DSO-20-12

    Abstract: 824R
    Text: BTS 824R Smart High-Side Power Switch Four Channels: 4 x 90mΩ Ω Status Feedback Product Summary Vbb Active channels On-state Resistance RON Nominal load current IL NOM Current limitation IL(SCr) Package Operating Voltage Power SO 20 5.5.40V four parallel


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    824R

    Abstract: P-DSO-20-12 Q67060-S7027 SCR IC CHIP
    Text: BTS 824R Smart High-Side Power Switch Four Channels: 4 x 90mΩ Status Feedback Product Summary Vbb Active channels On-state Resistance RON Nominal load current IL NOM Current limitation IL(SCr) Package Operating Voltage one 90mΩ 4.7A 12A 5.5.40V four parallel


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    PDF 2003-Oct-01 824R P-DSO-20-12 Q67060-S7027 SCR IC CHIP

    a06 transistor

    Abstract: TRANSISTOR A06 Code "A06" RF Semiconductor marking AAAA marking A06 BF 184 transistor BFP405 a06 transistor 165 chip diode 047 SIEMENS BFP405
    Text: SIEGET 25 BFP405 NPN Silicon RF Transistor Low Current Applications l For Oscillators up to 12 GHz l For Noise Figure F = 1.15 dB at 1.8 GHz l Outstanding G = 22 dB at 1.8 GHz Transition Frequency f = 25 GHz l Gold metalization for high reliability l SIEGET 25-Line


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    PDF BFP405 1512dB 25-Line OT343 Q62702-F-1592 a06 transistor TRANSISTOR A06 Code "A06" RF Semiconductor marking AAAA marking A06 BF 184 transistor BFP405 a06 transistor 165 chip diode 047 SIEMENS BFP405

    420 NPN Silicon RF Transistor

    Abstract: transistor 1346 Q62702-F1591 BFP420 VPS05605 RNF50 TP66 zs transistor transistor fc 1013 Semiconductor 1346 transistor
    Text: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3 • For high gain low noise amplifiers 4 • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability


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    PDF VPS05605 Q62702-F1591 OT-343 45GHz -j100 Jul-14-1998 420 NPN Silicon RF Transistor transistor 1346 Q62702-F1591 BFP420 VPS05605 RNF50 TP66 zs transistor transistor fc 1013 Semiconductor 1346 transistor

    Untitled

    Abstract: No abstract text available
    Text: MF388 820 nm - 250 MHz High Performance LED Data Sheet September 2004 Ordering Information MF388 MF388 ST TO-46 Package ST Housing -40 °C to +85 °C Note:Rated Fiber coupled power apply only on the TO-46 package, for housing options fiber coupled power is


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    PDF MF388

    transistor b 1238

    Abstract: Q62702-F1794 transistor bf 520 transistor bfp 520
    Text: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz 2 • Transition frequency fT = 45 GHz 1


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    PDF VPS05605 Q62702-F1794 OT-343 50Ohm 45GHz -j100 Sep-09-1998 transistor b 1238 Q62702-F1794 transistor bf 520 transistor bfp 520

    DATA SHEET TRANSMISSION LINE

    Abstract: Bi-Directional P-Channel FCT162344 Signal Path Designer
    Text: EFFECTIVE USE OF LINE TERMINATION IN HIGH SPEED LOGIC CONFERENCE PAPER CP-23 EFFECTIVE USE OF LINE TERMINATION IN HIGH SPEED LOGIC CONFERENCE PAPER CP-23 Integrated Device Technology, Inc. By Stanley Hronik INTRODUCTION turn on rate to achieve the fast throughput as shown in Figure


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    PDF CP-23 CP-19 DATA SHEET TRANSMISSION LINE Bi-Directional P-Channel FCT162344 Signal Path Designer

    AN6711

    Abstract: IEEE896 AN-671 C1995 SUMITOMO
    Text: The IEEE 896 Futurebus a is a general-purpose bus standard for high-performance microcomputer systems With a strong emphasis on speed and reliability IEEE 896 offers a number of innovative features that are not found in other backplane buses A major contribution to its performance comes from its electrical specifications Futurebus a solves for the first time


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    PDF 20-3A AN6711 IEEE896 AN-671 C1995 SUMITOMO

    3766

    Abstract: pbl 3766 r2 capacitor, 2200 microfarad 25v TP3054 1N4004 1N4454 ericsson slic node b ericsson hardware
    Text: September 1997 PBL 3766, PBL 3766/6 Subscriber Line Interface Circuit Description Key Features The PBL 3766 Subscriber Line Interface Circuit SLIC is a monolithic integrated circuit, manufactured in 75 V bipolar technology. The PBL 3766 SLIC facilitates the


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    PDF 1522-PBL S-164 3766 pbl 3766 r2 capacitor, 2200 microfarad 25v TP3054 1N4004 1N4454 ericsson slic node b ericsson hardware

    pbl 3766 r2

    Abstract: TP3054 1N4004 1N4454 ericsson slic
    Text: October1998 PBL 3766, PBL 3766/6 Subscriber Line Interface Circuit Description Key Features The PBL 3766 Subscriber Line Interface Circuit SLIC is a monolithic integrated circuit, manufactured in 75 V bipolar technology. The PBL 3766 SLIC facilitates the


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    PDF October1998 1522-PBL S-164 pbl 3766 r2 TP3054 1N4004 1N4454 ericsson slic

    b 8842

    Abstract: C1995 DS3662 DS3896 DS3897
    Text: The IEEE 896 Futurebus is a proposed general-purpose bus standard for high-performance microcomputer systems With a strong emphasis on speed and reliability P896 offers a number of innovative features that are not found in other backplane buses A major contribution to its performance comes from its electrical specifications The Futurebus solves for the first time


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    6NTP2A

    Abstract: IEC-63 BCM3352 UL-1950 ericsson slic ericsson 800 filter Ericsson Microelectronics
    Text: PBL 387 82 Preliminary Subscriber Line Interface Circuit SLIC Key Features • Designed to interface with Broadcom BCM3352, FlexiVoice , cable modem circuit VCC VTBAT AGND VBAT PRT BGND C1 • Differential Codec interface • On-chip ringing generation


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    PDF BCM3352, SE-164 6NTP2A IEC-63 BCM3352 UL-1950 ericsson slic ericsson 800 filter Ericsson Microelectronics

    Untitled

    Abstract: No abstract text available
    Text: RFCM3080 40-1003MHZ GAAS/GAN PUSH PULL MODULE Package: 9 pin, 11.0 mm x 8.5 mm x 1.375mm RFCM3080 Features • Excellent Linearity  Superior Return Loss Performance  Extremely Low Distortion  Optimal Reliability  Low Noise  Unconditionally Stable Under all


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    PDF RFCM3080 40-1003MHZ 375mm 1003MHz 270mA 24VDC 40MHz 1003MHz RFCM3080

    3762a

    Abstract: PBL3762
    Text: October 1998 PBL 3762A/2, PBL 3762A/4 Subscriber Line Interface Circuit Description Key Features The PBL 3762A/2 Subscriber Line Interface Circuit SLIC is a bipolar integrated circuit in 90 V technology which replaces the conventional transformer based analog


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    PDF 762A/2, 762A/4 762A/2 1522-PBL S-164 3762a PBL3762

    pbl3762a

    Abstract: No abstract text available
    Text: September 1997 PBL 3762A, PBL 3762A/4 Subscriber Line Interface Circuit Description Key Features The PBL 3762A Subscriber Line Interface Circuit SLIC is a bipolar integrated circuit in 90 V technology which replaces the conventional transformer based analog line


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    PDF 762A/4 1522-PBL S-164 pbl3762a

    3762a

    Abstract: PBL 3762/2 R1 Ericsson PBL 455 khz if transformer ericsson slic RL 782 relay
    Text: March 1999 PBL 3762A/2, PBL 3762A/4 Subscriber Line Interface Circuit Description Key Features The PBL 3762A/2 Subscriber Line Interface Circuit SLIC is a bipolar integrated circuit in 90 V technology which replaces the conventional transformer based analog


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    PDF 762A/2, 762A/4 762A/2 762A/2 1522-PBL S-164 3762a PBL 3762/2 R1 Ericsson PBL 455 khz if transformer ericsson slic RL 782 relay

    PBL3798

    Abstract: capacitor, 2200 microfarad 25v ERICSSON BML
    Text: April 1997 PBL 3798/6 Subscriber Line Interface Circuit Description Key Features PBL 3798/6 is an analog Subscriber Line Interface Circuit SLIC , which is fabricated in a 75 V bipolar, monolithic process. PBL 3798/6 has a programmable, constant current feed. A stand-by state reduces


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    PDF 1522-PBL S-164 PBL3798 capacitor, 2200 microfarad 25v ERICSSON BML

    r100y

    Abstract: No abstract text available
    Text: TELEFUNKEN ELECTRONIC 17E D • fl*120GTb 0006520 □ ■ AL£6 v R P \A / S f i Zl •¡mtUllHyJWIK electronic C lH M IM w alc^ | , _ " * *>f J * • < j 3 t Silicon Photo PIN Diode N-Type) ‘ Applications:. Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs-LED's.


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    PDF 120GTb 11NEP r100y

    Untitled

    Abstract: No abstract text available
    Text: MIC2981/2982 High-Voltage High-Current Source Driver Array Preliminary Information General Features The MIC2981/82 is an 8-channel, high-voltage, high-current source driver array ideal for switching high-power loads from logic-level TTL, CMOS, or PMOS control signals.


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    PDF MIC2981/2982 MIC2981/82 500mA, 500mA UDN2981 UDN2982 18-Lead

    TEA 1091

    Abstract: DIODE bfp 86 siemens rs 1091
    Text: SIEMENS SI EGET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability


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    PDF Q62702-F1591 OT-343 IS21I2 235LG5 E35bD5 01EEQQ0 TEA 1091 DIODE bfp 86 siemens rs 1091