welding rectifier
Abstract: 8000P SKN8000P02 diode SKN molybdenum
Text: VRSM VRRM V IFAV sin. 180; Tcase = 130 °C 200 SKN 8000P 02 400 SKN 8000P 04 600 SKN 8000P 06 Rectifier Diode Pellets 1) 8 200 A Symbol Conditions 2) SKN 8000 P Preliminary Data SKN 8000P Units 8 200 A 90 80 kA kA 40 000 32 000 kA2s kA2s 4 100 mA mA IFAV
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8000P
8000P
welding rectifier
SKN8000P02
diode SKN molybdenum
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DISC THYRISTOR
Abstract: No abstract text available
Text: SKN 6000 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Rectifier Diode SKN 6000 &'' & 7+ ;+ & 7+ ;+ ,& 0+ , -1 *2+3 4 ) 25 6/
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222 diode
Abstract: B 80 bridge rectifier thyristor 60 A DISC THYRISTOR
Text: SKN 4000 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Rectifier Diode SKN 4000 &'' & 9, 1, & 9, 1, -& 1, - .2 34,5 6 ) 7, 80
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Untitled
Abstract: No abstract text available
Text: SKN 6000 THYRISTOR BRIDGE,SCR,BRIDGE Disc Diode Rectifier Diode SKN 6000 EFC8 EFF8 E VJJ ZJJ E VJJ ZJJ G?KE H OJJJ K L'17P IQJR S/ H QT U$N CWX OJJJYJV CWX OJJJYJZ OJJ OJJ CWX OJJJYJO Symbol Conditions G?KE '17P IQJR BC$ INR S/ H QT LIJJN U$ Values Units OJJJ LTZJJN
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SKN 21 DIODE
Abstract: diode skn 21
Text: SKN 100 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Diode Rectifier Diode ! ! < " <
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DISC THYRISTOR
Abstract: No abstract text available
Text: SKN 4000 THYRISTOR BRIDGE,SCR,BRIDGE Rectifier Diode SKN 4000 &'' & 9, 1, & 9, 1, -& 1, - .2 34,5 6 ) 7, 80 $:; 1,<,9 $:; 1,<,1 *, *, $:; 1,<,* ) *+, - ./ 0 Conditions 2 34,5 #$ 305 6 ) 47 .3,0 8
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DISC THYRISTOR
Abstract: No abstract text available
Text: SKN 6000 THYRISTOR BRIDGE,SCR,BRIDGE Rectifier Diode SKN 6000 &'' & 7+ ;+ & 7+ ;+ ,& 0+ , -1 *2+3 4 ) 25 6/ $89 0+:+7 $89 0+:+; 0+ 0+ $89 0+:+0 ) *+ , -. / Conditions 1 *2+3 #$ */3 4 ) 25 -*+/ 6
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d655 e
Abstract: No abstract text available
Text: SKN 100 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Rectifier Diode 3$>@ 3$$@ 3 [22 122 0A22 0[22 0C22 3 [22 122 0A22 0[22 0C22 =PJ3 U 022 J S 6:X 012Y ;7 U 0A2 ZMW >FG 022¥2[ >F$ 022¥2[ >FG 022¥21 >F$ 022¥21 >FG 022¥0A >F$ 022¥0A >FG 022¥0[ >F$ 022¥0[
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0E222
C20g0H
d655 e
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Untitled
Abstract: No abstract text available
Text: SKN 100 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Rectifier Diode ! ! < " < $ < " < $ 1+ 6 + 4 9 : 6 " ;.8 ' =< ' =< '( = ' = '( =" ' =" '( =< ' =< '( =$
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semikron skn 320/02
Abstract: Semikron SKR 26 /02 Semikron SKR 26 /12 metal rectifier diode skr 300 semikron skn 320/12 high voltage rectifier diode semikron 320/16 semikron skr 320-04 Semikron SKR 40 /12 skn 320/02
Text: VRSM VRRM IFRMS maximum values for continuous operation 700 A IFAV (sin. 180; Tcase = 100 °C) 420 A 400 A Rectifier Diodes SKN 320 SKN 400 SKR 320 V 200 400 800 1200 1400 1600 1800 2400 2700 3000 SKN 320/02 SKN 320/04 SKN 320/08 SKN 320/12 SKN 320/14 SKN 320/16
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Nm/530
semikron skn 320/02
Semikron SKR 26 /02
Semikron SKR 26 /12
metal rectifier diode skr 300
semikron skn 320/12
high voltage rectifier diode
semikron 320/16
semikron skr 320-04
Semikron SKR 40 /12
skn 320/02
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skiip 613 gb
Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Text: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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CSG3001-18A04
Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power
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400F415
460F460
500F500
630F415
730F460
800F500
570F575
630F660
870F575
1000F660
CSG3001-18A04
thyristor BBC
thyristor aeg
BBC DSDI 35
WG15013B8C
WG9017
abb sami star
SM18CXC805
sm13cxc174
CSG2001-18A04
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Untitled
Abstract: No abstract text available
Text: SKS 1000N B6HK 670 V16 Electrical Characteristics Symbol Conditions min Electrical Data TAMBIENT = 35°C ; No overload Maximum DC current ID Maximum AC voltage +/-10% VAC DC Bus voltage VBUS PTOTAL Maximum stack power Stack power loss (TAMBIENT = 35°C)
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1000N
U3/515
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Untitled
Abstract: No abstract text available
Text: SKS 1000N B6HK 670 V16 SU Electrical Characteristics Symbol Conditions min Electrical Data TAMBIENT = 35°C ; No overload Maximum DC current ID Maximum AC voltage +/-10% VAC DC Bus voltage VBUS PTOTAL Maximum stack power Stack power loss (TAMBIENT = 35°C)
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1000N
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Untitled
Abstract: No abstract text available
Text: SKS 215N B6HK 145 V16 Electrical Characteristics Symbol Conditions min Electrical Data TAMBIENT = 35°C ; No overload Maximum DC current ID Maximum AC voltage +/-10% VAC DC Bus voltage VBUS PTOTAL Maximum stack power Stack power loss (TAMBIENT = 35°C) PLOSS
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P1/150
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Untitled
Abstract: No abstract text available
Text: SKS 1500F B6HK 1010 V16 Electrical Characteristics Symbol Conditions min Electrical Data TAMBIENT = 35°C ; No overload Maximum DC current ID Maximum AC voltage +/-10% VAC DC Bus voltage VBUS PTOTAL Maximum stack power Stack power loss (TAMBIENT = 35°C)
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1500F
240VAC
30VDC
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Untitled
Abstract: No abstract text available
Text: SKS 355N B6HK 240 V16 Electrical Characteristics Symbol Conditions min Electrical Data TAMBIENT = 35°C ; No overload Maximum DC current ID Maximum AC voltage +/-10% VAC DC Bus voltage VBUS PTOTAL Maximum stack power Stack power loss (TAMBIENT = 35°C) PLOSS
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P1/200
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Untitled
Abstract: No abstract text available
Text: SKS 1500F B6HK 1010 V16 SU Electrical Characteristics Symbol Conditions min Electrical Data TAMBIENT = 35°C ; No overload Maximum DC current ID Maximum AC voltage +/-10% VAC DC Bus voltage VBUS PTOTAL Maximum stack power Stack power loss (TAMBIENT = 35°C)
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1500F
240VAC
30VDC
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Untitled
Abstract: No abstract text available
Text: SKS 355N B6HK 240 V16 SU Electrical Characteristics Symbol Conditions min Electrical Data TAMBIENT = 35°C ; No overload Maximum DC current ID Maximum AC voltage +/-10% VAC DC Bus voltage VBUS PTOTAL Maximum stack power Stack power loss (TAMBIENT = 35°C)
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Untitled
Abstract: No abstract text available
Text: SKS 215N B6HK 145 V16 SU Electrical Characteristics Symbol Conditions min Electrical Data TAMBIENT = 35°C ; No overload Maximum DC current ID Maximum AC voltage +/-10% VAC DC Bus voltage VBUS PTOTAL Maximum stack power Stack power loss (TAMBIENT = 35°C)
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Heatsink For stud devices - Semikron
Abstract: DQ-203 SKR2616 Semikron SKR 26 /02
Text: SKN 26 V rrm V V 400 400 SKN 26/04 lFAV = 25 A sin. 180 800 800 SKN 26/08 SKR 26/08 1200 SKN 26/12 SKR 26/12 1400 1400 SKN 26/14 SKR 26/14 1600 1600 SKN 26/16 SKR 26/16 Symbol Conditions 'fav sin. 180; T c = 100 °C 'fsm i2t SKR 26 A K 9; Ta = 45 °C; B2 / B6
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DQ-203
Heatsink For stud devices - Semikron
SKR2616
Semikron SKR 26 /02
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Untitled
Abstract: No abstract text available
Text: SEMIKRON Vrsm V rrm V Rectifier Diodes Ifav sin. 180; Tease - •■• 4000 A (50 °C) 200 400 600 SKN 4000/02 SKN 6000/02 SKN 4000/04 SKN 6000/04 SKN 4000/06 SKN 6000/06 Symbol Conditions Ifav sin. 180;Tcase= 50°C;DSC1) = 85 °C;DSC1) = 100 °C;DSC1)
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B8-45
SKWD7000
fll3bb71
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diode SKN molybdenum
Abstract: No abstract text available
Text: s e m ik r d n Section 15: SEMICELL Power Semiconductor Chips The following tables contain our standard types. Other types or selections are available on special request. Please contact your SEMIKRON office. SEMICELL® Rectifier Diode Chips , T^ es $ Y s k n 3
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GMCL03
GMCL04
CD47E405
GMCL06
fll3bb71
diode SKN molybdenum
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Untitled
Abstract: No abstract text available
Text: s e M IK R D n V rsM V rrm dv/ V dhm dt cr V 900 1300 1300 1500 1700 1900 2100 2300 ItAV (Sin. 180; Tease = •- .) V/(iS 150 A (85 °C) 172 A (81 °C) 150 A (85 °C) 172 A (81 °C) V 800 1200 1200 1400 1600 1800 2000 2200 SKKT 131/08 D 131/12 D 131/12 E
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Tyj1130
SKKE201
013bfc
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