SD-0013
Abstract: No abstract text available
Text: SILICON DIODE CHIPS DEVICE NO. : SD-0013 SD-013 1. Scope : This specification applies to silicon diode chips, Device No. SD-0013. 2. Structure : 2-1. Mesa type. 2-2. Electrodes: P (Anode ) Side: Aluminum alloy or gold alloy. N (Cathode) Side: Gold alloy.
|
Original
|
PDF
|
SD-0013
SD-013)
SD-0013.
SD-0013
|
Opto Diode
Abstract: No abstract text available
Text: SILICON DIODE CHIPS DEVICE NO. : SD-0011 1. Scope : This specification applies to silicon PIN diode chips, Device NO. SD-0011 2. Structure : 2-1. Planar type : Silicon Diode 2-2. Electrodes : Top side Anode : Aluminum Alloy . Back side ( Cathode ) : Gold Alloy.
|
Original
|
PDF
|
SD-0011
Opto Diode
|
Untitled
Abstract: No abstract text available
Text: OVAL SOLID STATE LAMP ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WP5603PBDL/SD/H BLUE Description Features OUTSTNDING MATERIAL EFFICIENCY. The Blue source color devices are made with InGaN on SiC Light Emitting Diode.
|
Original
|
PDF
|
WP5603PBDL/SD/H
APR/19/2005
DSAF2520
|
Untitled
Abstract: No abstract text available
Text: OVAL SOLID STATE LAMP ATTENTION WP5603VGDL/SD/H GREEN OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description Features OUTSTNDING MATERIAL EFFICIENCY. The Green source color devices are made with InGaN on SiC Light Emitting Diode.
|
Original
|
PDF
|
WP5603VGDL/SD/H
APR/19/2005
DSAF2523
|
Untitled
Abstract: No abstract text available
Text: OVAL SOLID STATE LAMP Part Number: WP5603SYDL/SD/J3 Super Bright Yellow Features Description z Outstanding material efficiency. The Super Bright Yellow device is based on light emitting z Reliable and rugged. diode chip made from AlGaInP. z RoHS compliant.
|
Original
|
PDF
|
WP5603SYDL/SD/J3
DSAI9679
MAR/19/2013
|
Untitled
Abstract: No abstract text available
Text: OVAL SOLID STATE LAMP Part Number: WP5603SIDL/SD/J3 Hyper Red Features Description z Outstanding material efficiency. The Hyper Red device is based on light emitting diode chip z Reliable and rugged. made from AlGaInP. z RoHS compliant. Package Dimensions
|
Original
|
PDF
|
WP5603SIDL/SD/J3
DSAI9678
JUL/19/2012
03SIDL/SD/J3
WP5603SIDL/SD/J3
|
SDcd data sheet
Abstract: AN10439
Text: IP4352CX24 9-channel SD-memory card interface filter with ESD protection to IEC 61000-4-2 level 4 Rev. 01 — 13 August 2009 Product data sheet 1. Product profile 1.1 General description The IP4352CX24 is a diode array for protecting downstream components from
|
Original
|
PDF
|
IP4352CX24
IP4352CX24
SDcd data sheet
AN10439
|
SDC04
Abstract: No abstract text available
Text: SDC04 NPN Darlington External dimensions E With built-in avalanche diode Absolute maximum ratings Electrical characteristics Ta=25°C ••• SD (Ta=25°C) Specification min typ max Symbol Ratings Unit Symbol VCBO 100±15 V ICBO VCEO 100±15 V IEBO VEBO
|
Original
|
PDF
|
SDC04
SDC04
|
IP4350CX24
Abstract: TF card footprint PCB
Text: IP4352CX24 9-channel SD memory card interface filter with ESD protection to IEC 61000-4-2 level 4 Rev. 02 — 3 May 2010 Product data sheet 1. Product profile 1.1 General description The IP4352CX24 is a diode array designed to provide protection to downstream
|
Original
|
PDF
|
IP4352CX24
IP4352CX24
IP4350CX24
TF card footprint PCB
|
Untitled
Abstract: No abstract text available
Text: IP4352CX24 9-channel SD memory card interface filter with ESD protection to IEC 61000-4-2 level 4 Rev. 02 — 3 May 2010 Product data sheet 1. Product profile 1.1 General description The IP4352CX24 is a diode array designed to provide protection to downstream
|
Original
|
PDF
|
IP4352CX24
IP4352CX24
|
SDC03
Abstract: No abstract text available
Text: SDC03 NPN Darlington With built-in avalanche diode Absolute maximum ratings External dimensions E Electrical characteristics Ta=25°C Symbol Ratings Unit Symbol VCBO 60±10 V ICBO VCEO 60±10 V IEBO SD (Ta=25°C) Specification min typ max 1.1 ••• Unit
|
Original
|
PDF
|
SDC03
SDC03
|
SDC06
Abstract: No abstract text available
Text: SDC06 NPN With built-in avalanche diode Absolute maximum ratings External dimensions E Electrical characteristics Ta=25°C SD (Ta=25°C) Specification min typ max Symbol Ratings Unit Symbol VCBO 30 to 45 V ICBO VCEO 30 to 45 V IEBO VEBO 6 V VCEO 30 IC 2
|
Original
|
PDF
|
SDC06
SDC06
|
DIODE RK 306
Abstract: tr/DIODE RK 306
Text: DETECTORS POSITION SENSITIVE DIODE SD-503 SD-503B, m ^ t o The SD-503 is position sensors fo r au to m a tic focusing of camera. FEATURES • Laser beam fo c u s in g /p o s itio n in g is best perform ed. • High perform ance • High r e lia b ility in dem anding environments.
|
OCR Scan
|
PDF
|
SD-503
SD-503B,
SD-503
DIODE RK 306
tr/DIODE RK 306
|
Untitled
Abstract: No abstract text available
Text: SCHOTTKY DIODE ARRAY SDA12 ISSU E 1 -A U G U S T 1996 DEVICE DESCRIPTION FEATURES The SD A 12 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise • Repetitive peak forward current - 200mA
|
OCR Scan
|
PDF
|
SDA12
200mA
SDA12N8
SDA12D8
|
|
|
SD4148
Abstract: MMSD4148T1
Text: •■■éUMÌÌh MOTOROLA Order this document by MMSD4148T1/D SEMICONDUCTOR TECHNICAL DATA Switching Diode M M SD 4148T1 The switching diode has the following features: • SOD-123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time
|
OCR Scan
|
PDF
|
MMSD4148T1/D
OD-123
4148T1
MMSD4148T1
SD4148
MMSD4148T1
|
R 2.8 diode
Abstract: PHC21025
Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs SURFACE-MOUNT LOW OHMIC VERTICAL D-MOSFETS type number diode characteristics characteristics ratings rPtot max. W 'c / ^ G S 'dm v SD at
|
OCR Scan
|
PDF
|
OT223
BSP100
PHN103
PHN110
PHN1053'
PHN210
BSP250
PHP1093
PHC22503'
R 2.8 diode
PHC21025
|
Untitled
Abstract: No abstract text available
Text: DETECTORS POSITION S EN SIT IV E DIODE S D 1 0 1 ,102,103 W f c S f e DIMENSIONS Urtit:mm SD-101, 102, 103IS, •§m<D%±m=?-T‘ t o The SD-101, 102, 103 are position sensors for automatic focusing of camera. FEATURES • B ft/ S fiS fttU ., • a tS E S 'ftC ^ l'o
|
OCR Scan
|
PDF
|
SD-101,
103IS,
|
B-500 diode
Abstract: 3700/2200 250C1500 B250C 8250 C3700-2200 TT 2200 b80c din 46247 B380
Text: Rectifier Diode Bridges Type V rrm V rms V V Ifsm Ifav m A A Last 10 ms load tvj=tvjma change: Type tvj max outline O c V rrm V rms Ifsm Ifavm V V A A Last load change: tvj= tvjmax R/C B 40 C 800 Si,.D,.SD 100 40 145 B2 30/ 25-30 Si 75 30 B 80 C 800 Si, .D.SD
|
OCR Scan
|
PDF
|
0D0216Ã
B-500 diode
3700/2200
250C1500
B250C
8250
C3700-2200
TT 2200
b80c
din 46247
B380
|
B-500 diode
Abstract: B40C C5000-3300 C1500 b6 diode B80C 3700 40C5000 SIB660 diode 2200
Text: Rectifier Diode Bridges Type V rrm V rms V V Ifsm If a v m A A Last 10 ms load tvj=tvjma change: R/C -v max outline Type O c V rrm V rms *FSM ' favm V V A A 10 ms t vj= t vjmax B 40 C 800 Si,.D,.SD 100 40 145 B2 30/ 25-30 Si 75 30 B 80 C 800 Si, .D.SD
|
OCR Scan
|
PDF
|
00D21Ô
B-500 diode
B40C
C5000-3300
C1500
b6 diode
B80C
3700
40C5000
SIB660
diode 2200
|
SDA803
Abstract: 20 amp rectifier
Text: SDÄ803 * c'0 ' ?' 1 20 amp rectifier assembly * AVERAGE OUTPUT CURRENT 20 AMPS * 50 NSEC. * MAXIMUM THERMAL RESISTANCE 4°C/WATT * HERMETICALLY SEALED DIODE CELLS * TURRET TERMINAL MAXIMUM RECOVERY Designed in aluminum case to provide maximum thermal conductivity and simple installation.
|
OCR Scan
|
PDF
|
SDA803
TWX-910-583-4807
20 amp rectifier
|
D3229
Abstract: SN74S1050 SN74S1052 switching diode 16 array
Text: SN 74S 1052 16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SD LS016A • Designed to Reduce Reflection Noise • Repetitive Peak Forward Current . . . 2 0 0 mA • • • D3229. JULY 19B9-REVISED MARCH 1990 D W OR N PACKAGE TOP VIEW D01 C D 02 C DO 3 C
|
OCR Scan
|
PDF
|
SN74S1052
SDLS016A
D3229.
1989-REVISED
16-Bit
MIL-STD-883C,
300-mlf
SN74S1052
D3229
SN74S1050
switching diode 16 array
|
Untitled
Abstract: No abstract text available
Text: Bulletin 12066/B International SRectifier 303C.C s e rie s SD FAST RECOVERY DIODES Hockey Puk Version Features • High power FAST recovery diode series ■ 1.0 to 2.0 ps recovery time ■ High voltage ratings up to 2500V 350A ■ High current capability
|
OCR Scan
|
PDF
|
12066/B
D0-200AA
D-661
SD303C.
D-662
|
4011 TOSHIBA
Abstract: 1SV102 C20V C25V TA510 25R4
Text: T OSH IBA "b? {DISCRETE/OPTO} 9097250 TOSHIBA m DISCRETE/OPTO> 1SV102 ^ TI^ Ü^ SD DOO^Bbl 67C 09361 o T - O lH I "Silicon Epitaxial Planar Type • Variable Capacitance Diode Unit in mm AU RADIO BAND TUNING APPLICATIONS. FEATURES: . High Capacitance Ratio : C2v/C25V=23(Typ.
|
OCR Scan
|
PDF
|
1SV102
C2v/C25V
4011 TOSHIBA
1SV102
C20V
C25V
TA510
25R4
|
Untitled
Abstract: No abstract text available
Text: Surging Ideas T VS Diode Application Note TEL: 805-498-2111 SI96-12 FAX: 805-498-3804 E SD Protection Good Systran design demands some form of ESD protection. Good shielding of conductive cables and equipment cases as well as good bonding practices are required for externally radiated ESD emissions. For
|
OCR Scan
|
PDF
|
SI96-12
|
