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    DIODE SCHOTTKY RS1 Search Results

    DIODE SCHOTTKY RS1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SCHOTTKY RS1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LTC4229 Ideal Diode and Hot Swap Controller Features Description Ideal Diode and Inrush Current Control for Redundant Supplies n Low Loss Replacement for Power Schottky Diode n Protects Output Voltage from Input Brownouts n Allows Safe Hot Swapping from a Live Backplane


    Original     		PDF LTC4229 24-Lead MSOP-16 DFN-16 LTC4353 LTC4355 SO-16, DFN-14 MSOP-16 LTC4357

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE6019 SYNCHRONOUS RECTIFIER DRIVER FEATURES DESCRIPTION Offers Efficiency Improvement Over Schottky Diode Depends on Drive Configuration of the SR . Drives all Power MOSFET. Prediction Gate Timing Control. Minimum MOSFET Body Diode Conduction.


    Original     		PDF APE6019 APE6019 6019M

    ALL POWER MOSFET

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE6019 SYNCHRONOUS RECTIFIER DRIVER FEATURES DESCRIPTION Offers Efficiency Improvement Over Schottky Diode Depends on Drive Configuration of the SR . Drives all Power MOSFET. Prediction Gate Timing Control. Minimum MOSFET Body Diode Conduction.


    Original     		PDF APE6019 APE6019 6019M ALL POWER MOSFET

    RB160-40

    Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
    Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148


    Original     		PDF CDSL4148 LL4148 PMLL4148 RLS4148 CDSF335 BAS16WS CDSF4148 1N4148WS RB160-40 KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    step down chopper

    Abstract: dc chopper circuit for overload protection HP054 STK733 STK730C STK731 overvoltage protection circuit
    Text: Ordering number : EN4472A Thick Film Hybrid IC STK730C 5 V Single Output MOS Chopper Regulator Overview Features The STK730C is a chopper type step-down dedicated 5 V single output regulator that uses a power MOSFET as its switching element and a Schottky barrier diode


    Original     		PDF EN4472A STK730C STK730C step down chopper dc chopper circuit for overload protection HP054 STK733 STK731 overvoltage protection circuit

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    LTC4225UFD

    Abstract: LTC4225-1 SMAJ7A LTC4225 LTC4225-2 LTC4225C LTC4225I SBG1025L Si7336ADP sir468
    Text: LTC4225-1/LTC4225-2 Dual Ideal Diode and Hot Swap Controller Features Description Power Path and Inrush Current Control for Redundant Supplies n Low Loss Replacement for Power Schottky Diodes n Allows Safe Hot Swapping from a Live Backplane n 2.9V to 18V Operating Range


    Original     		PDF LTC4225-1/LTC4225-2 LTC4225-1: LTC4225-2: 24-Lead SSOP-36 QFN-32 SSOP-16 DFN-16 MSOP-10 DFN-10 LTC4225UFD LTC4225-1 SMAJ7A LTC4225 LTC4225-2 LTC4225C LTC4225I SBG1025L Si7336ADP sir468

    LTC42281

    Abstract: No abstract text available
    Text: LTC4228-1/LTC4228-2 Dual Ideal Diode and Hot Swap Controller Features Description Power Path and Inrush Current Control for Redundant Supplies n Low Loss Replacement for Power Schottky Diodes n Protects Output Voltage from Input Brownouts n Allows Safe Hot Swapping from a Live Backplane


    Original     		PDF LTC4228-1/LTC4228-2 LTC4228-1: LTC4228-2: 28-Lead dioOP-16 DFN-16 MSOP-10 DFN-10 GN-24 QFN-24 LTC42281

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    transistor 2N5952

    Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337
    Text: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SMA Package Weight mg 64 Product Group Type No. SS12 – SS1200 SR22 – SR2200 SX32 – SX3200 ES1A – ES1J MURA160 ER2AA – ER2JA US1A – US1M RS1A – RS1M GS1A – GS1M


    Original     		PDF SS1200 SR2200 SX3200 MURA160 1SMA4728A SZ1330A 1SMA5913B 1SMA5956B 1SMA2EZ330D5 2011/65/EU.

    FMCW Radar

    Abstract: 77GHz Radar infineon FMCW sensor radar 24ghz AN190 diagram radar circuit 77GHz circulator Types of Radar Antenna FMCW circuit FMCW
    Text: Low Barri er RF Sch ottk y Dio d e BAT2 4 Mi xe r f or FMCW Ra dar at 2 4 GHz Application Note AN190 Revision: V1.0 Date: 22-01-2010 RF and Protecti on Devi c es Edition 15-02-2010 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		PDF AN190 AN190, 24GHz BAT24: FMCW Radar 77GHz Radar infineon FMCW sensor radar 24ghz AN190 diagram radar circuit 77GHz circulator Types of Radar Antenna FMCW circuit FMCW

    3 watt 70v zener diode

    Abstract: inkjet print head interface K784P
    Text: Inkjet Printer Table of Contents ACCESS SENSORS, Door Sensor. 3 CONTROL BOARD, DSP


    Original     		PDF 00V-600V; DO-220AA V-540V; V-440V DO-204AL DO-41) DO-204AC DO-15) 3 watt 70v zener diode inkjet print head interface K784P

    Untitled

    Abstract: No abstract text available
    Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOD-123FL Package Weight mg 17 Product Group Type No. MBR0520L – MBR0540L SS0520FL – SS05100FL MBR120L – MBR140L SS1020FL – SS10200FL SS2020FL – SS20200FL ES1000FL – ES1006FL


    Original     		PDF OD-123FL MBR0520L MBR0540L SS0520FL SS05100FL MBR120L MBR140L SS1020FL SS10200FL SS2020FL

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    bridge rectifier 24V AC to 24v dc

    Abstract: 1N5408 smd diodes GSIB1560
    Text: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4


    Original     		PDF 250ns; DO-204AL DO-41) DO-220AA V-540V; V-440V bridge rectifier 24V AC to 24v dc 1N5408 smd diodes GSIB1560

    SMP1321-040LF

    Abstract: metal detector diagram PI varactor diode q factor measurement diode schottky RS1 SMP1340-040LF pin diode limiter SMP1330 SMV1247-040LF rf choke SMP1345-040LF
    Text: Applications • High isolation switching • Detection • Mixing • Voltage control Miniature 0402 Surface Mount Technology Packaged RF Diodes Features Skyworks offers a variety of 0402 surface mount technology SMT diodes including PIN diodes for switch and attenuator applications, limiter diodes for receiver protection


    Original     		PDF BRO391-10C SMP1321-040LF metal detector diagram PI varactor diode q factor measurement diode schottky RS1 SMP1340-040LF pin diode limiter SMP1330 SMV1247-040LF rf choke SMP1345-040LF

    varactor diode phase shifter

    Abstract: SMP1321-040LF Surface Mount RF Schottky Barrier Diodes
    Text: Applications • High isolation switching • Detection • Mixing • Voltage control Miniature 0402 Surface Mount Technology Packaged RF Diodes Features Skyworks offers a variety of 0402 surface mount technology SMT diodes including PIN diodes for switch and attenuator applications, limiter diodes for receiver protection


    Original     		PDF BRO391-10C varactor diode phase shifter SMP1321-040LF Surface Mount RF Schottky Barrier Diodes

    MOSFET Based Chopper

    Abstract: step down chopper stk731 K730C STK733
    Text: Ordering number : EN4472A Thick Film Hybrid 1C STK730C No.4472A Ì 5 V Single Output MOS Chopper Regulator Overview Features The STK730C is a chopper type step-down dedicated 5 V single output regulator that uses a power MOSFET as its switching elem ent and a Schottky barrier diode


    OCR Scan     		PDF EN4472A STK730C MOSFET Based Chopper step down chopper stk731 K730C STK733