NX5304
Abstract: NX5306 NX6306 NX6306GH NX6306GK NX6306SH NX6306SK inGaAs
Text: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor
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NX6306
NX6306S
NX6306G
NX5304
NX5306
NX6306GH
NX6306GK
NX6306SH
NX6306SK
inGaAs
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C11159
Abstract: NX7300BA-CC NX7301BA-CC NX7302BA-CC NX7303BA-CC STM-16
Text: DATA SHEET LASER DIODE NX7301BA-CC 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR 156 Mb/s, 622 Mb/s DESCRIPTION The NX7301BA-CC is a 1 310 nm Fabry-Perot FP laser diode coaxial module with single mode fiber. It has a Multiple Quantum Well (MQW) structure and a built-in InGaAs monitor photo diode.
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NX7301BA-CC
NX7301BA-CC
C11159
NX7300BA-CC
NX7302BA-CC
NX7303BA-CC
STM-16
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This
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NX6306
NX6306S
NX6306G
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX6504 Series 1 550 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6504 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6504S Series
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NX6504
NX6504S
NX6504G
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX6504 Series 1 550 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6504 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6504S Series
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NX6504
NX6504S
NX6504G
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This
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NX6306
NX6306S
NX6306G
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX6301 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6301 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6301S Series
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NX6301
NX6301S
NX6301G
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hz nec
Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8503BG-CC NX8503CG-CC 10 gb laser diode
Text: DATA SHEET LASER DIODE NX8503BG-CC,NX8503CG-CC 1 550 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 156 Mb/s, 622 Mb/s DESCRIPTION The NX8503BG-CC and NX8503CG-CC are 1 550 nm Multiple Quantum Well MQW structured Distributed FeedBack (DFB) laser diode coaxial modules with single mode fiber.
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NX8503BG-CC
NX8503CG-CC
NX8503CG-CC
hz nec
NX8300BE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8304BE-CC
10 gb laser diode
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NX7300BA-CC
Abstract: NX7300CH-CC NX7301BA-CC NX7301CH-CC NX7302BA-CC STM-16 10 gb laser diode nec 2502 4 pin
Text: DATA SHEET LASER DIODE NX7301BA-CC,NX7301CH-CC 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR 156 Mb/s, 622 Mb/s DESCRIPTION The NX7301BA-CC and NX7301CH-CC are 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial modules with single mode fiber.
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NX7301BA-CC
NX7301CH-CC
NX7301CH-CC
NX7300BA-CC
NX7300CH-CC
NX7302BA-CC
STM-16
10 gb laser diode
nec 2502 4 pin
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NX7300BA-CC
Abstract: NX7300CH-CC NX7301BA-CC NX7301CA-CC NX7302BA-CC STM-16
Text: DATA SHEET LASER DIODE NX7301BA-CC,NX7301CA-CC 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR 156 Mb/s, 622 Mb/s DESCRIPTION The NX7301BA-CC and NX7301CA-CC are 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial modules with single mode fiber.
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NX7301BA-CC
NX7301CA-CC
NX7301CA-CC
NX7300BA-CC
NX7300CH-CC
NX7302BA-CC
STM-16
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NX5501
Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16 nec. 5.5 473
Text: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series are 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.
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NX6508
NX5501
NX5304
NX5306
NX5307
NX5504
NX6306
NX6307
STM-16
nec. 5.5 473
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NX5501
Abstract: NX5304 NX5306 NX5307 NX6509 NX6509GH NX6509GK STM-16
Text: PRELIMINARY DATA SHEET LASER DIODE NX6509 Series 1 550 nm FOR 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6509 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are designed for 2.5 Gb/s: STM-16 (L-16.2) application and
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NX6509
STM-16
NX5501
NX5304
NX5306
NX5307
NX6509GH
NX6509GK
STM-16
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diode 31 DQ 05
Abstract: No abstract text available
Text: DIGITALLY CONTROLLED, 360-DEG. PIN DIODE P H A S E SH IFTER S E R IE S DQ GENERAL INFORMATION: KDI/Triangle's Series DQ digitally controlled PIN-diode phase shifters vary the phase of a micro wave signal in response to a TTL-compatible logic input signal.
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360-DEG.
0-to-360-deg.
DB-25P
diode 31 DQ 05
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Untitled
Abstract: No abstract text available
Text: i / 3 y h * - JVJT S H 'Î-K —K ïS'n.—JU Diode Module Schottky Barrier Diode OUTLINE DIMENSIONS D360SC6M 60V 360A l> US V f ► s jc ô '/ jv ^ u > *§ k S R S Ü »DC/DC H C x T .^ Ü f ê É I l f i : « * r s t f i < f i ÿ v>) RATINGS a Item s Absolute Maximum Ratings
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D360SC6M
100ns,
J515-5
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Untitled
Abstract: No abstract text available
Text: Si G E C P L E S S E Y NOVEMBERS SEM IC OND UCT OR S DS4180-4.0 DNB64 RECTIFIER DIODE APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. KEY PARAMETERS V RRM 3600V 2530A 'fs m 27000A I F a v , ■ Welding. ■ Battery Chargers.
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DS4180-4
DNB64
7000A
D0200AD.
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Untitled
Abstract: No abstract text available
Text: v a y Schottky Barrier Diode Diode Module â D360SC4M OUTLINE DIMENSIONS C a s e : M odules 40V 360A B a a • * s i tyi-jb • ê V f • * S S R B S •D C /D C D V A ’- ÿ • I C x X S 1- • Æ tè ü RATINGS • Î ë fc H t^ A È fë m Absolute Maximum Ratings
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D360SC4M
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Untitled
Abstract: No abstract text available
Text: y3y h * A ' U K K iv a - J I/ Schottky Barrier Diode Diode Module OUTLINE DIMENSIONS D360SC7M Case : Modules 70V 360A • ^ s a ty a - jL / • ffiVF • e jc w s u •* S R S S •D C /D C • I C x T . Î '- RATINGS • Îë ftlI^ Ü Ë fë m A bso lu te M axim um Ratings
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D360SC7M
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Untitled
Abstract: No abstract text available
Text: S i GEC P L E S S E Y augustes S E M IC OND UC TOR S DS4189-2.3 DS2007SF RECTIFIER DIODE KEY PARAMETERS v RRM 4000V 1225A | f a v 25000A FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.
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DS4189-2
DS2007SF
5000A
DS2007SF40
DS2007SF39
DS2007SF38
DS2007SF37
DS2007SF36
DS2007SF35
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Untitled
Abstract: No abstract text available
Text: S i GEC P L E S S E Y augustes SE M IC OND UC TOR S DS4168-2.3 DS1107SG RECTIFIER DIODE KEY PARAMETERS VRRM 4000V lF AV, 870A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.
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DS4168-2
DS1107SG
DS1107SG40
DS1107SG39
DS1107SG38
DS1107SG37
DS1107SG36
DS1107SG35
DD2B31M
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Diode Module Wtm D360SC6M OUTLINE 60V 360A Feature V 3. —I \j • • f iV • High lo Rating-M odule-PKG • Low V f f • Sm all B jc Main Use • High Po w er S w itching Regulator • D C / D C Z \ y jï- S • S ’ • IC x X i?
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D360SC6M
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D360SC5M
Abstract: SHINDENGEN DIODE
Text: va y $ 'T ^ — K Schottky Barrier Diode ï / a - A Diode Module o u t l in e d i m e n s io n s D360SC5M Case : Modules 50V 360A © © •C V F • ô jc M 'J U ffl i * •D C /D C U V A -S ? mxmoytïD.-? RATINGS Absolute Maximum Ratings m Fi Item Storage Temperature
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D360SC5M
D360SC5M
SHINDENGEN DIODE
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marking code 43b
Abstract: TSZ22111-03 DIODE Sp marking code 15B diode TSZ2211103 43B diode
Text: PRODUCTS Zener diode 1. 2. 3. 4. PRODUCT TYPE APPLICATION FEATURE PAGE 1/ 2 TYPE C D Z B s e r i e s Zener diode Silicon Epitaxial Planer C D Z B s e r i e s Voltage regulation Ultra small mold type (VMN2) By chip-mounter, automatic mounting is possible
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TSZ22111-03
000pcs.
TSZ22111-03
marking code 43b
DIODE Sp marking code
15B diode
TSZ2211103
43B diode
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Untitled
Abstract: No abstract text available
Text: Twin Diode Diode Module O U T L IN E D IM E N S IO N S D30VCD 600V 30A • Ë te ft RATING S Absolute Maximum Ratings IS s Item « » a * Storag» Temperatur« Operating Junction Temperature -ö-AäSiS'SfE Maximum Reverse Voltage a * « * Average R ectified Forward Current
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D30VCD
Jffifl21S3Ã
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Untitled
Abstract: No abstract text available
Text: î / a y h * - A'UT7S H 'Î-K —KïS'n.—Jb Diode Module Schottky Barrier Diode OUTLINE DIMENSIONS D360SC4M 40V 360A l> US V f ► sjcô '/jv^u > *§ kS R S Ü »DC/DC H C x T .^ ÜfêÉIlfi:«* r s tfi< f i ÿ v>) RATINGS Absolute Maximum Ratings a Item
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D360SC4M
100ns,
J515-5
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