Untitled
Abstract: No abstract text available
Text: SEMiX 854GB176HDs Absolute Maximum Ratings Symbol Conditions IGBT . .34 5 7, SEMiX 4s Trench IGBT Modules SEMiX 854GB176HDs Target Data Features
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854GB176HDs
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Untitled
Abstract: No abstract text available
Text: SEMiX 854GB176HD Absolute Maximum Ratings Symbol Conditions IGBT . .34 5 7, SEMiX 4 Trench IGBT Modules SEMiX 854GB176HD Target Data Features !
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854GB176HD
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I251 diode
Abstract: DLF60 Z311 I251 DE3L4 HE87 HJC.1 de5s6 DE3L
Text: #jf+j;B OUTLINE DIMENSIONS n Case 1 1Z Type 4 + SlZAO P 3 6 0 0 V l.lA Standard soldering pad H z$!& R A T I N G S @jkj~~~$$ Absolute 1 ‘ , r’f. , /,h t $ Storage Temperature :; :; ,‘, 1; : ;,a ‘11 Operating Junction Temperature ir ,I [I(! ;I” &ii’ f:
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Ta-25-C
I251 diode
DLF60
Z311
I251
DE3L4
HE87
HJC.1
de5s6
DE3L
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jcfr
Abstract: No abstract text available
Text: n 9+jf+j;&B O U T L I N E D I M E N S I O N S Case 1 1Z Type SlZBO 6 0 0 V 0.8A ,_ 4.7 + 0 2 h c,1.5 . 0 n 7\1A\ *_ 3.8 + 0 2 c, _ - -1.5 IO 2 z#$$!? RATINGS $f$f$sA;I”@ 4 Absolute Item Maximum 3 rJ 7; I1 j’{, 1’; I I ItI ~1111. i Tj Temperature Reverse Voltage
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SlZB20
SlZB60
jcfr
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Untitled
Abstract: No abstract text available
Text: Single In-line Package B rid g e D io d e • O U T L IN E D IM E N S IO N S D3SBAD 600V 4A Unit • mm ■ R A T IN G S Absolute Maximum Ratings m g IE tj- & It em Symbol s -g -g is s /t O perating J u n c tio n Tem perature - £ A M % lK J ± Average Rectified Forward Current
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE FCH08A06 SA/eov 3.1 122 M AX FEATURES 4.B(.189> ’ MAX] o Sim ilar to TO-220AB Case 10.3(.405) ' MAX ^ 'TfiCTTSJ1* A 6.91272Ï o Fully Molded Isolation OT34Ä) I 15.41.606i R8T533Ï '2.85(1121 a a i o Dual Diodes-Cathode Common o Low Forw ard V oltage Drop
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FCH08A06
O-220AB
8T533Ã
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Untitled
Abstract: No abstract text available
Text: FU JI au,s sirüöJE 2SK2762-01 L,S FAP-IIS Series > Features - N-channel MOS-FET 800V 4Q 80W 4A > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
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2SK2762-01
80psput*
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Untitled
Abstract: No abstract text available
Text: International k ?r Rectifier I HEXFET Power MOSFET INTERNATIONAL RECTIFIER • • • • • 4A55452 0013146 371 H I N R PD-9.834 IRFI720G Isolated Package High Voltage Isolations 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance
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4A55452
IRFI720G
O-220
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Untitled
Abstract: No abstract text available
Text: UP lI January 7, 1998 200V, 4A, 30ns QUICK REFERENCE DATA Very low reverse recovery tim e Low forward voltage drop Glass passivated for herm etic sealing Low switching losses Soft, non-snap off, recovery characteristics ABSOLUTE MAXIMUM RATINGS @ 25°C •
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EL805-498-2111
3PFT05
3PFT15
3PFT15
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DP0702
Abstract: dn1001 dn1002 Adams-Russell SDI Microwave diodes dn1002 MIL-I-45208A DP0701 DP-2000 DN1005A DP1005A
Text: ADAMS-RUSSELL/ I | S D I INC □□0G3Q4 2 |~ V - * T-ZS " Description * Features The DP series of PIN diodes and the DN series of NIP diodes are designed to cover a wide range of applica tions th at fall into the general catagories of switching, phase shifting, attenuating and limiting.
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0E1335E
D-1012and
DP0702
dn1001 dn1002
Adams-Russell
SDI Microwave diodes
dn1002
MIL-I-45208A
DP0701
DP-2000
DN1005A
DP1005A
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Untitled
Abstract: No abstract text available
Text: SSS7N80A Advanced Power MOSFET FEATURES - 800 V ^DS on = 1.8 Û BVqss < h ^r _Q • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 MA(Max.) @ VOS= 800V
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SSS7N80A
SoldeSS7N80A
300nF
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 2VQ03CT 2VQ04CT 2VQ03CTF 2VQ04CTF 2.2A /30— 40V 2 .38M A X .0 9 4 ’~ 6 .4 (.2 5 2 ) ' , 5 .3 5 1 2 1 1) 1.271.05) MAX r 5 .0 5 U 9 9 ) FEATURES °TO-251AA Case I •T0-252AA Case, Surface Mount Device 2.38M A X (.094) IA n 1
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2VQ03CT
2VQ04CT
2VQ03CTF
2VQ04CTF
O-251AA
T0-252AA
9C035)
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npn 2A DPAK
Abstract: No abstract text available
Text: HITACHI 2 S D 1 5 2 L , 2 S D 1 5 2 S SILICON NPN EPITAXIAL MEDÍUM SPEED POWER AMPLIFIER £¡Tyi* 23 _ 1 • -< I. l$a«r 1. <Vtl¡€cior ?. Emittier rj 4 C o tîc ç io f A. J. 4 lOsrocniK,*«* in m m íí ?! h—1 U a j- DPAK) (A B S O L U TE M AXIM UM RATINGS
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2SD1520L,
2SD1520S
40tnA
npn 2A DPAK
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sgsp311
Abstract: substitu bipolar transistors sgsp331 sgsp531 10a 400v bipolar transistor
Text: r z 7 ^ 7 § S G S - m o M S O N M g [M & (I(g T[M iiO (gS TECHNICAL NOTE POWER MOS IN SWITCHING AN EVALUATION METHOD AND A PRACTICAL EXAMPLE INTRODUCTION POWER MOS are used in switch mode power sup plies. H.F. welding systems, industrial ovens, re lay drivers and other similar applications. These
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SSR -25 DD
Abstract: SSR -100 DD MOSFET SSR
Text: SSR/U3055LA Logic-Level Gate Drive Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA Max. @ VDS = 60V ■ Lower Rds(on) : 0.124 n (Typ.)
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SSR/U3055LA
DGM04Ã
SSR -25 DD
SSR -100 DD
MOSFET SSR
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rc261
Abstract: No abstract text available
Text: SSS4N80A Advanced Power MOSFET FEATURES BVdss ” 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 uA M ax. @ VDS= 800V
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SSS4N80A
rc261
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ERD36M
Abstract: H150
Text: E R D 3 6 M 4 A FAST RECOVERY DIODE : Features Insulated package by fully molding Super high speed sw itching • 9 —> i r > W • « « « * « : 1*9 8B*£iM! Low V f in turn on • A im t k Connection Diagram High reliability : Applications High speed sw itchin g.
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ERD36M
SC-67Â
H150
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ERD36M
Abstract: H150
Text: E R D 3 6 M 4 A FA ST RECO VERY DIODE : Features Insulated package by fully molding Super high speed sw itching • 9 —> i r > W Low V f in turn on • « « « * « : 1*9 8B*£iM! • Aimtk Connection Diagram High reliability : Applications High speed sw itchin g.
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ERD36M
SC-67Â
H150
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Untitled
Abstract: No abstract text available
Text: 7A LDO 3-Pin Adjustable Linear Regulator D escription The CS5207A-1 linear regulator pro vides 7A at adjustable voltages from 1.25V to 5V. This adjustable device requires two external resis tors to set the output voltage and provide the m inimum load current
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CS5207A-1
CS5207A-1
T0-220
CS5207A-1GT3
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unitrode Applications Note U-96
Abstract: UC3642 UNITRODE applications handbook uc3842 -96 U-101 unitrode unitrode Application Note U-96 forward converter uc3844 500w 500W boost converter uc3843 UC3843 application note buck UC3843 in isolated flyback converter UC3843 application note soft start
Text: APPLICATION NOTE U-100A THE UC3842/3/4/5 SERIES OF CURRENT-MODE PWM IC’S DESCRIPTION FEATURES The UC1842/3/4/5 family of control ICs provides the nec essary features to implement off-line or DC to DC fixed frequency current mode control schemes with a minimal
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U-100A
UC3842/3/4/5
UC1842/3/4/5
UC3642,
UC3706,
UC3901
U-101
unitrode Applications Note U-96
UC3642
UNITRODE applications handbook uc3842 -96
U-101 unitrode
unitrode Application Note U-96
forward converter uc3844 500w
500W boost converter uc3843
UC3843 application note buck
UC3843 in isolated flyback converter
UC3843 application note soft start
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Untitled
Abstract: No abstract text available
Text: TÏ TOSHIBA {DIS CR ET E/OPT O} 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR dËT| TGTTSSO O G l b f l T f l ^ | 99D 16898 DT-SR-I TOSHIBA FIELD EFFECT TRANSISTOR Y T F 8 3 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ff-MOSI) INDUSTRIAL APPLICATIONS Unit in nun
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IC13MAX.
250yA
00A/us
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8n10
Abstract: SGSP311 8n08 SEFM8N08
Text: S G S-THOHSON 0?E- D | -7=12^237 .D01flQfl*î 7 | 73C 1 7 5 8 6 D J T*3>^~U SEFM8N08 SEFM8N10 SEFP8N08 \ ’ N-CHANNEL POWER MOS TRANSISTORS SEFP8N,° HIGH SPEED SWITCHING APPLICATIONS v DSS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field
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D01flQfl*
SEFM8N08
SEFM8N10
SEFP8N08
300jjs
SGSP311
C-311
8n10
8n08
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Untitled
Abstract: No abstract text available
Text: 7A LDO 5-Pin Adjustable Linear Regulator Description The CS-5257A-1 linear regulator provides 7A at adjustable voltages from 1.25V to 5V. This adjustable device requires tw o external resis tors to set the o u tp u t voltage and provide the m inim um load current
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CS-5257A-1
120mA
CS-5257A-1
T0-220
O-220
CS-5257A-1T5
20b755b
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ERD36M
Abstract: H150
Text: E R D 3 6 M 4 A FAST RECOVERY DIODE : Features Insulated package by fully molding Super high speed sw itching • 9 — > ir> W • « « « * « : 1*98B*£iM! Connection Diagram Low V f in turn on • A im t k High reliability : Applications High speed sw itchin g.
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ERD36M
SC-67Â
wave50
H150
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